JPS6175488A - Manufacture of ic card - Google Patents
Manufacture of ic cardInfo
- Publication number
- JPS6175488A JPS6175488A JP59196206A JP19620684A JPS6175488A JP S6175488 A JPS6175488 A JP S6175488A JP 59196206 A JP59196206 A JP 59196206A JP 19620684 A JP19620684 A JP 19620684A JP S6175488 A JPS6175488 A JP S6175488A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- base material
- sheet
- card
- vinyl chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000463 material Substances 0.000 claims abstract description 40
- 229920005989 resin Polymers 0.000 claims abstract description 27
- 239000011347 resin Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 12
- 238000005266 casting Methods 0.000 claims 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 abstract description 15
- 238000007639 printing Methods 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 abstract 2
- 229920002554 vinyl polymer Polymers 0.000 abstract 2
- 239000000843 powder Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07745—Mounting details of integrated circuit chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Credit Cards Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、シート状基材中にＩＣチップを埋め込んで実
装して構成されるＩＣカードの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing an IC card in which an IC chip is embedded and mounted in a sheet-like base material.
ＩＣカードは樹脂等により形成されるシート状基材中に
記憶・演算機能等を有するＩＣチップを埋め込んで実装
したカードである。このようなＩＣカードの製造方法と
して、従来より薄いプリント基板に裸のＩＣチップをチ
ップオンボードでワイヤボンディングにより実装し樹脂
封止した後、このプリント基板をカード基材中にラミネ
ートする方法や、プリント基板に開口を切欠してその部
分にＴＡＢによりＩＣチップを実装し、これをシート状
基材中にラミネートする方法等が知られている。これら
の方法は、従来一般のＩＣ実装技術をそのままＩＣカー
ドの実装に適用したものに他ならない。An IC card is a card in which an IC chip having storage, calculation functions, etc. is embedded in a sheet-like base material made of resin or the like. Methods for manufacturing such IC cards include a method in which a bare IC chip is mounted on a thinner printed circuit board by wire bonding in a chip-on-board manner, sealed with resin, and then the printed circuit board is laminated into a card base material. A method is known in which an opening is cut out in a printed circuit board, an IC chip is mounted in the opening by TAB, and this is laminated into a sheet-like base material. These methods are nothing but the application of conventional general IC mounting techniques to IC card mounting.
しかしながら、これらの製造方法はＩＣカードの仕様お
よび用途からくる要求を必ずしも満たすものではない。However, these manufacturing methods do not necessarily satisfy the requirements arising from the specifications and uses of IC cards.
すなわち、ワイヤボンディングを用いる方法では、基板
とＩＣチップの厚み（０゜２９〜０．４５ａ程度）に加
えてワイヤのループハイド（０，３ｍ程度）を計算に入
れねばならず、実質的ＧＣ０，７６＋０．０８ｍという
、■Ｓｏで規定された厚み以内でＩＣカードを製造する
ことは極めて困難である。また、ＩＣカードの用途とし
ては、キャッシュカード、クレジットカード等が考えら
れるが、ＩＣカードがこれらの金融カードとして採用さ
れるに当たっては、低コストということが必須条件であ
り、プリント基板等の配線基板の作製とＩＣチップの電
気的接続が別個に行なわれる上記の製造方法では、この
条件を満たすことが難しい。That is, in the method using wire bonding, in addition to the thickness of the substrate and IC chip (approximately 0.29 to 0.45 mm), the loop hide of the wire (approximately 0.3 m) must be taken into account, and the actual GC0, It is extremely difficult to manufacture IC cards within the thickness specified by ■So, which is 76+0.08m. In addition, IC cards can be used for cash cards, credit cards, etc., but low cost is an essential condition for IC cards to be adopted as these financial cards, and wiring boards such as printed circuit boards. It is difficult to satisfy this condition with the above-mentioned manufacturing method in which the fabrication of the IC chip and the electrical connection of the IC chip are performed separately.
一方、ＩＣチップをプリント基板に実装せずにシート状
基材に埋め込み、シート状基材上に導体パターンを形成
して回路網の形成とＩＣチップの電気的接続を行なう方
法が提案されている（特開昭５８−２０９２３号公報）
。しかしながら、どの方法ではシート状基材の凹部に入
れたＩＣチップ上に、ＩＣチップのメタライズ部分（ボ
ンディングパッド部）上方部分を開口したテープキャリ
ア状の支持体を配置し、この支持体上に導体ペーストを
印刷し導体路を形成すると同時に導体ペーストを開口部
に入れることにより、導体路とボンディングパッドとの
接続をとるようにしているため、製造工程が複雑である
ばかりでなく、支持体の厚さがＩＣカード全体を薄くす
る上で障害となる。この支持体がなければ、導体ペース
トを印刷したときペーストの一部がシート状基材と裸の
ＩＣチップとの間隙に侵入し導体路とＩＣチップのサブ
ストレート間の絶縁を損なうので、支持体の使用は必須
である。On the other hand, a method has been proposed in which the IC chip is embedded in a sheet-like base material without being mounted on a printed circuit board, and a conductive pattern is formed on the sheet-like base material to form a circuit network and electrically connect the IC chip. (Unexamined Japanese Patent Publication No. 58-20923)
. However, in both methods, a tape carrier-like support with an opening above the metallized portion (bonding pad portion) of the IC chip is placed over the IC chip placed in the recess of the sheet-like base material, and a conductor is placed on the support. Since the conductive paste is inserted into the opening at the same time as the conductive path is formed by printing the paste, the connection between the conductive path and the bonding pad is established, which not only complicates the manufacturing process but also reduces the thickness of the support. This is an obstacle to making the entire IC card thinner. Without this support, when the conductor paste is printed, some of the paste will enter the gap between the sheet-like substrate and the bare IC chip, damaging the insulation between the conductor traces and the substrate of the IC chip. The use of is mandatory.
本発明の目的は、ＩＣカードの薄型化が容易で、かつ製
造工程が簡単なＩＣカードの製造方法を提供することに
ある。An object of the present invention is to provide a method for manufacturing an IC card that allows easy reduction in the thickness of the IC card and a simple manufacturing process.
本発明に係るＩＣカードの一製造方法は、表面の少なく
ともボンディングパッド部が露出したＩＣチップを絶縁
性のシート状基材中にその表面がシート状基材表面と同
一平面上に露出し、かつ側面がシート状基材に密着する
ように埋め込んだ後、前記シート状基材上に少なくとも
前記ＩＣチップのボンディングパッドに接続される導体
パターンを形成する工程を含むことを特徴とする。One method for manufacturing an IC card according to the present invention is to place an IC chip with at least an exposed bonding pad portion on the surface in an insulating sheet-like base material, the surface of which is exposed on the same plane as the surface of the sheet-like base material, and The IC chip is characterized by including a step of forming a conductive pattern connected to at least the bonding pads of the IC chip on the sheet-like base material after embedding the IC chip so that the side surface is in close contact with the sheet-like base material.
ここで、シート状基材としては塩化ビニル等の熱可塑性
樹脂や、エポキシ等の網状化反応を起こして硬化する硬
化性樹脂を用いることができる。Here, as the sheet-like base material, a thermoplastic resin such as vinyl chloride, or a curable resin such as epoxy that hardens by causing a reticulation reaction can be used.
ＩＣチップの埋め込み工程については、シート状基材に
熱可塑性樹脂を用いる場合には例えばシート状基材の凹
部にＩＣチップを収納し、熱プレスによりシート状基材
を塑性変形させればよく、またシート状基材に硬化性樹
脂を用いる場合は、例えば平板状の支持体の上にＩＣチ
ップをボンディングパッドが形成された面が支持体に接
するように配置し、その上に硬化性樹脂を注型して、そ
れを網状化反応により硬化させて全体をモールドすれば
よい。Regarding the process of embedding the IC chip, when a thermoplastic resin is used for the sheet-like base material, for example, the IC chip may be stored in a recess of the sheet-like base material, and the sheet-like base material may be plastically deformed by heat pressing. In addition, when using a curable resin for the sheet-like base material, for example, place the IC chip on a flat support so that the surface on which the bonding pad is formed is in contact with the support, and then apply the curable resin on top of the IC chip. It is sufficient to cast the material, harden it by a reticulation reaction, and then mold the entire material.
この場合、導体パターンの形成はＩＣチップの表面とシ
ート状基材の表面とが同一平面上にあり、かつＩＣチッ
プの側面が絶縁性のカード基材で被覆されているため、
スクリーン印刷、オフセット印刷、またはディスペンサ
一方式等の所望の図形となるようにインクを吐出するノ
ズルを移動させながら描画する方式により、ＩＣチップ
との接続部分の導体路形成２回路網の形成、あるいは導
体路および回路網の同時形成を行なうことができる。In this case, the conductor pattern is formed because the surface of the IC chip and the surface of the sheet-like base material are on the same plane, and the side surfaces of the IC chip are covered with an insulating card base material.
By screen printing, offset printing, or one-dispenser type, which draws while moving the nozzle that ejects ink to form a desired figure, it is possible to form two circuit networks, or Simultaneous formation of conductor tracks and networks can be carried out.
導体パターンに使用する導体材料としては、例えば樹脂
中に導電性粉末を含有させたペーストを用いることがで
きる。導電性粉末としては、通常の金属粉末、半導電性
粉末、金属酸化物粉末等が挙げられる。例えばＡｇ、Ａ
ｕ、ｐｔ、Ｃｕ、Ｎ ｉ。As the conductor material used for the conductor pattern, for example, a paste containing conductive powder in resin can be used. Examples of the conductive powder include ordinary metal powder, semiconductive powder, metal oxide powder, and the like. For example, Ag, A
u, pt, Cu, Ni.
Ｓｎ、 Ｗ、 Ｍｏ、 Ｐｄ、 Ｓ ｉ Ｃ，Ｃ，Ｒｕ
Ｏ２等である。粉末の種類によって異なるが、例えばＡ
Ｑの場合は７０［ｗｔ％］以上の含有率で導電性を示し
、他の材料もほぼ同様であり、少なくとも導電性を示す
程度に含ませればよい。Sn, W, Mo, Pd, S i C, C, Ru
O2 etc. It varies depending on the type of powder, but for example A
In the case of Q, it shows conductivity at a content of 70 [wt%] or more, and the other materials are almost the same, and it is sufficient if they are included at least to the extent that they show conductivity.
Ｃ発明の効果〕
本発明によれば、シート状基材そのものを配線基板とし
、かつ搭載されるＩＣチップも基板の中に埋め込まれた
形でマウントされるため、印刷によるＩＣチップの端子
接続および回路網の形成が可能となり、薄型化が極めて
容易でかつ簡単な工程で製造可能なＩＣカードを得るこ
とができる。C Effects of the Invention] According to the present invention, the sheet-like base material itself is used as a wiring board, and the IC chips to be mounted are also mounted embedded in the board, so that terminal connections of the IC chips by printing and It becomes possible to form a circuit network, and it is possible to obtain an IC card that can be extremely easily made thin and manufactured through a simple process.
ＬＬ九二
第１図は本発明の一実施例の製造工程を示す断面図であ
る。まず第１図（ａ）に示すようにＩＣチップと同じ厚
み、すなわち０．４５．ｗ程度の厚さを持つ第１の塩化
ビニル樹脂シート１を用意し、これに縦横寸法がＩＣチ
ップのそれより１００μＴｒＬ程度大きい開口２を形成
する。LL92 FIG. 1 is a sectional view showing the manufacturing process of an embodiment of the present invention. First, as shown in FIG. 1(a), the thickness is the same as that of the IC chip, that is, 0.45. A first vinyl chloride resin sheet 1 having a thickness of about 1.5 mm is prepared, and an opening 2 whose vertical and horizontal dimensions are about 100 μTrL larger than that of the IC chip is formed therein.
次に、第１図（ｂ）に示すように第１の塩化ビニルシー
ト１に対し厚さ０．１ｍ程度の第２の塩化ビニル樹脂シ
ート３を裏打ちすることによって、開口２の部分に第２
の塩化ビニルシート３を底面とする凹部４を形成し、こ
の凹部４内にＩＣチップ５をその表面、すなわちボンデ
ィングパッド部６の形成された面を上側にして収納する
。ＩＣチップ５は表面が全て露出した裸の状態のもので
もよいし、ボンディングパッド部６のみが露出し他の部
分は絶縁性の被覆が施されたものでもよい。Next, as shown in FIG. 1(b), by lining the first vinyl chloride sheet 1 with a second vinyl chloride resin sheet 3 having a thickness of approximately 0.1 m, a second vinyl chloride resin sheet is placed in the opening 2.
A recess 4 is formed with the vinyl chloride sheet 3 as a bottom surface, and an IC chip 5 is housed in the recess 4 with its surface, that is, the surface on which the bonding pad portion 6 is formed, facing upward. The IC chip 5 may be in a bare state with the entire surface exposed, or may be one in which only the bonding pad portion 6 is exposed and the other portions are covered with an insulating coating.
次に、全体を熱プレスして第１１３よび第２の塩化ビニ
ル樹脂シート１．３を塑性変形させることにより、第１
図（Ｃ）に示すように凹部４とＩＣチップ５との間の空
隙に塩化ビニル樹脂を充填させると共に、塩化ビニル樹
脂シート１．３を互いに融着させ、ＩＣチップ５の表面
と同一平面を持つシート状基材７を得る。この時、プレ
ス条件としては熱プレス用の熱盤瀉度り９０℃、冷Ｗ圧
、力１８ 、６ ＫＯｆ／ｍを用いたが、前述の現象が
得られるならば、特にこの条件に拘泥するものではない
。Next, by hot-pressing the whole and plastically deforming the first vinyl chloride resin sheet 113 and the second vinyl chloride resin sheet 1.3, the first
As shown in Figure (C), the gap between the recess 4 and the IC chip 5 is filled with vinyl chloride resin, and the vinyl chloride resin sheets 1.3 are fused together so that the same plane as the surface of the IC chip 5 is formed. A sheet-like base material 7 is obtained. At this time, the press conditions used were a hot plate temperature of 90°C, a cold W pressure, and a force of 18 and 6 KOf/m, but if the above-mentioned phenomenon can be obtained, these conditions should be adhered to. It's not a thing.
そして、次に第１図（ｄ）に示すようにシート状基材７
上に、導電性ペーストとして例えば塩化ビニル樹脂をバ
インダとする銀ペーストを印刷し、溶剤を連敗させて導
体パターン８．９を形成する。Then, as shown in FIG. 1(d), the sheet-like base material 7
A conductive paste, for example, a silver paste using vinyl chloride resin as a binder, is printed on the conductive paste, and a conductive pattern 8.9 is formed by continuously exposing the solvent to the conductive paste.
この時、ＩＣチップ３との接続部分の導体パターン８と
回路網部分の導体パターン９とは、−回の印刷で形成し
ても良いし、二回の印刷に分けて形成しても良い。また
、必要に応じてこの上にさらに導体層を形成して多層に
することも可能である。At this time, the conductor pattern 8 in the connection portion with the IC chip 3 and the conductor pattern 9 in the circuit network portion may be formed by printing twice, or may be formed by printing twice. Moreover, it is also possible to further form a conductor layer thereon as required to make it multilayered.
この後、シート状基材７の表裏面にデザインの印刷を施
した塩化ビニル樹脂よりなるカバーシートを仮止めし、
熱プレスすることによりカバーシートをシート状基材７
とＲ着させ、ざらに外形の打ち抜き加工をすることによ
り、厚さ０．７６＃のＩＣカードが得られた。After that, a cover sheet made of vinyl chloride resin with a design printed on the front and back sides of the sheet-like base material 7 is temporarily fixed.
The cover sheet is formed into a sheet-like base material 7 by heat pressing.
An IC card with a thickness of 0.76 # was obtained by attaching the card to R and roughly punching out the outer shape.
第２図は本発明の他の実施例の製造工程を示す断面図で
ある。この実施例においては、まず第２図（ａ）に示す
ようにガラス板等の表面が平滑で、かつ透光性のある平
板上に粘着性と離型性とを備えた被覆、例えばシリコー
ン樹脂（東芝シリコン社製ＴＳＥ３０５１）をコーティ
ングした第１の支持体１１を用意し、その上にＩＣチッ
プ５をボンディングパッド部６の形成された面がＭｌの
支持体１１の表面と接触するように載せる。FIG. 2 is a sectional view showing the manufacturing process of another embodiment of the present invention. In this embodiment, first, as shown in FIG. 2(a), a flat plate having a smooth and transparent surface such as a glass plate is coated with a coating having adhesiveness and release properties, such as silicone resin. (TSE3051 manufactured by Toshiba Silicon Corporation) is prepared, and the IC chip 5 is placed thereon so that the surface on which the bonding pad portion 6 is formed is in contact with the surface of the Ml support 11. .
次いで、第２図（ｂ）に示すように第１の支持体１１の
周囲に厚さが０．５ｍｎで最終的に得たいＩＣカードの
外形に等しい形状に内部が打ち抜かれたスペーサ１３を
配置し、このスペーサ１３の内側にエポキシ樹脂を主体
とする紫外線硬化樹脂１４を注型し、さらに上側を第１
の支持体１１と同様の第２の支持体１２で覆った後、紫
外線照射炉等の強力な紫外線源の下にさらすことにより
、紫外線硬化樹脂１４に網状化反応を起こさせ硬化させ
る。そして、さらに１５０℃のオーブン中に１５分間放
置することにより、紫外線硬化性樹脂１４を完全に硬化
させる。その後、第１および第２の支持体１１．１２を
剥がし、スペーサ１３を除去することにより、第２図（
Ｃ）に示すようなＩＣチップ５の表面と同一平面を持つ
シート状基材１５を得る。Next, as shown in FIG. 2(b), a spacer 13 having a thickness of 0.5 mm and whose inside is punched out in a shape equal to the outer shape of the IC card to be finally obtained is placed around the first support 11. Then, an ultraviolet curing resin 14 mainly made of epoxy resin is cast inside this spacer 13, and the upper side is filled with a first layer.
After covering with a second support 12 similar to the support 11, the resin is exposed to a strong ultraviolet source such as an ultraviolet irradiation oven to cause a reticulation reaction in the ultraviolet curing resin 14 and harden it. Then, the ultraviolet curable resin 14 is completely cured by leaving it in an oven at 150° C. for 15 minutes. Thereafter, by peeling off the first and second supports 11.12 and removing the spacer 13, as shown in FIG.
A sheet-like base material 15 having the same plane as the surface of the IC chip 5 as shown in C) is obtained.
そして、第２図（ｄ）に示すようにシート状基材１５の
上に、導電性ペーストとして平均分子量２５００のエポ
キシ樹脂をバインダとするＡＱペーストをディスペンサ
１６により描画し、さらに１５０℃で１時間キュアーす
ることにより、バインダであるエポキシ樹脂を硬化させ
て導体パターンを８．９を形成した。Then, as shown in FIG. 2(d), an AQ paste containing an epoxy resin having an average molecular weight of 2,500 as a binder is drawn as a conductive paste on the sheet-like base material 15 using a dispenser 16, and then heated at 150° C. for 1 hour. By curing, the epoxy resin as a binder was cured and a conductive pattern 8.9 was formed.
この後、シート状基材１５の表裏面にカードの外形寸法
と等しく、かつデザインの印刷を適宜流した厚さ０．１
３ｇの熱可塑性樹脂より成るカバーシートを接着したと
ころ、厚さ０．７６ｍのＩＣカードが得られた。After this, the front and back sides of the sheet-like base material 15 are coated with a thickness of 0.1 equal to the external dimensions of the card and with the design printed as appropriate.
When a cover sheet made of 3 g of thermoplastic resin was adhered, an IC card with a thickness of 0.76 m was obtained.
丈ｍ
本発明のさらに別の実施例として、実施例２において注
型した樹脂として前記紫外線硬化樹脂に代えてエポキシ
樹脂を用い、１５０℃、４時間の条件で熱硬化せしめた
ところ、実施例２と同様の結果が得られた。Length m As yet another example of the present invention, an epoxy resin was used instead of the ultraviolet curable resin as the cast resin in Example 2, and was thermally cured at 150°C for 4 hours. Similar results were obtained.
なお、本発明は上記した実施例に限定されるものではな
く、その要旨を逸脱しない範囲で種々変形実施すること
が可能である。Note that the present invention is not limited to the embodiments described above, and various modifications can be made without departing from the spirit of the invention.
第１図（ａ）〜（ｄ）は本発明の一実施例に係るＩＣカ
ードの製造工程を説明するための断面図、第２図（ａ）
〜（ｄ＞は本発明の他の実施例に係るＩＣカードの製造
工程を説明するための断面図である。
１．３・・・塩化ビニルシート、２・・・開口、４・・
・凹部、５・・・ＩＣチップ、６・・・ボンディングパ
ッド部、７．１５・・・カード状基体、８．９・・・導
体パターン、１１．１２・・・支持体、１３・・・スペ
ーサ、１４・・・紫外線硬化樹脂。
出願人代理人 弁理士 鈴江武彦
第 １ 図
（ｂ）
（ｄ）
第２図
（ａ）
（ｂ）
（ｃ）1(a) to 1(d) are cross-sectional views for explaining the manufacturing process of an IC card according to an embodiment of the present invention, and FIG. 2(a)
~(d> is a sectional view for explaining the manufacturing process of an IC card according to another embodiment of the present invention. 1.3... Vinyl chloride sheet, 2... Opening, 4...
- Recessed portion, 5... IC chip, 6... Bonding pad portion, 7.15... Card-like base, 8.9... Conductor pattern, 11.12... Support, 13... Spacer, 14...UV curing resin. Applicant's agent Patent attorney Takehiko Suzue Figure 1 (b) (d) Figure 2 (a) (b) (c)
Claims (4)
たＩＣチップを絶縁性のシート状基材中に、表面が該シ
ート状基材表面と同一平面上に露出し、かつ側面がシー
ト状基材に密着するように埋め込んだ後、前記シート状
基材上に少なくとも前記ＩＣチップのボンディングパッ
ドに接続される導体パターンを形成する工程を含むこと
を特徴とするＩＣカードの製造方法。(1) An IC chip with at least the bonding pad portion exposed on the surface is placed in an insulating sheet-like base material, so that the surface is exposed on the same plane as the surface of the sheet-like base material, and the side surface is tightly attached to the sheet-like base material. A method for manufacturing an IC card, the method comprising the step of forming a conductor pattern on the sheet-like base material to be connected to at least a bonding pad of the IC chip.
工程に熱プレスを用いることを特徴とする特許請求の範
囲第１項記載のＩＣカードの製造方法。(2) The method for manufacturing an IC card according to claim 1, wherein a heat press is used in the step of embedding the IC chip in the sheet-like base material.
に注型法を用いることを特徴とする特許請求の範囲第１
項記載のＩＣカードの製造方法。(3) Claim 1, characterized in that a casting method is used in the step of embedding the IC chip into the sheet-like base material.
2. Method for manufacturing an IC card as described in Section 1.
化する硬化性樹脂を用いることを特徴とする特許請求の
範囲第３項記載のＩＣカードの製造方法。(4) The method for manufacturing an IC card according to claim 3, wherein a curable resin that is cured by a reticulation reaction is used as the resin used in the casting method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59196206A JPS6175488A (en) | 1984-09-19 | 1984-09-19 | Manufacture of ic card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59196206A JPS6175488A (en) | 1984-09-19 | 1984-09-19 | Manufacture of ic card |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6175488A true JPS6175488A (en) | 1986-04-17 |
| JPH0370272B2 JPH0370272B2 (en) | 1991-11-07 |
Family
ID=16353959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59196206A Granted JPS6175488A (en) | 1984-09-19 | 1984-09-19 | Manufacture of ic card |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6175488A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4931853A (en) * | 1986-05-20 | 1990-06-05 | Kabushiki Kaisha Toshiba | IC card and method of manufacturing the same |
| US7323778B2 (en) | 2002-11-08 | 2008-01-29 | Oki Electric Industry Co., Ltd. | Semiconductor device with improved design freedom of external terminal |
| JPWO2014006787A1 (en) * | 2012-07-04 | 2016-06-02 | パナソニックＩｐマネジメント株式会社 | Electronic component mounting structure, IC card, COF package |
-
1984
- 1984-09-19 JP JP59196206A patent/JPS6175488A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4931853A (en) * | 1986-05-20 | 1990-06-05 | Kabushiki Kaisha Toshiba | IC card and method of manufacturing the same |
| US4997791A (en) * | 1986-05-20 | 1991-03-05 | Kabushiki Kaisha Toshiba | IC card and method of manufacturing the same |
| US7323778B2 (en) | 2002-11-08 | 2008-01-29 | Oki Electric Industry Co., Ltd. | Semiconductor device with improved design freedom of external terminal |
| JPWO2014006787A1 (en) * | 2012-07-04 | 2016-06-02 | パナソニックＩｐマネジメント株式会社 | Electronic component mounting structure, IC card, COF package |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0370272B2 (en) | 1991-11-07 |
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