JPS6172679U - - Google Patents
Info
- Publication number
- JPS6172679U JPS6172679U JP15722484U JP15722484U JPS6172679U JP S6172679 U JPS6172679 U JP S6172679U JP 15722484 U JP15722484 U JP 15722484U JP 15722484 U JP15722484 U JP 15722484U JP S6172679 U JPS6172679 U JP S6172679U
- Authority
- JP
- Japan
- Prior art keywords
- movable beam
- polysilicon film
- acceleration sensor
- semiconductor
- semiconductor acceleration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 239000003513 alkali Substances 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例の主要部断面図、第
２図は従来装置の主要部断面図、第３図は本考案
の製造工程を示す図である。
符号の説明、１１…ｎ型Ｓｉ基板、１２…上部
電極、１３…下面絶縁膜、１４…上面絶縁膜、１
５…重り、１６…絶縁膜、１７…下部電極、１８
…MOSFET、１９…金属配線、２０…可動梁、２１
…スペーサ、２２…保護膜。
FIG. 1 is a sectional view of the main part of an embodiment of the present invention, FIG. 2 is a sectional view of the main part of a conventional device, and FIG. 3 is a diagram showing the manufacturing process of the present invention. Explanation of symbols, 11...n-type Si substrate, 12...upper electrode, 13...lower surface insulating film, 14...upper surface insulating film, 1
5... Weight, 16... Insulating film, 17... Lower electrode, 18
...MOSFET, 19...metal wiring, 20...movable beam, 21
...Spacer, 22...Protective film.
Claims (1)
することによつて加速度を検出する半導体加速度
センサにおいて、上記可動梁を、耐アルカリエツ
チング性のポリシリコン膜と、該ポリシリコン膜
の上面と下面にそれぞれ設けられたナイトライド
膜との三重構造にし、かつ上記可動梁上にワイヤ
ボンデイングで形成された金属ボールからなる重
りを装着したことを特徴とする半導体加速度セン
サ。 In a semiconductor acceleration sensor that detects acceleration by detecting the displacement of a movable beam formed on a semiconductor substrate, the movable beam is formed of a polysilicon film having alkali etching resistance and an upper surface of the polysilicon film. A semiconductor acceleration sensor characterized in that it has a triple structure with nitride films provided on the lower surface, and a weight made of a metal ball formed by wire bonding is mounted on the movable beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15722484U JPS6172679U (en) | 1984-10-19 | 1984-10-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15722484U JPS6172679U (en) | 1984-10-19 | 1984-10-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6172679U true JPS6172679U (en) | 1986-05-17 |
Family
ID=30715222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15722484U Pending JPS6172679U (en) | 1984-10-19 | 1984-10-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6172679U (en) |
-
1984
- 1984-10-19 JP JP15722484U patent/JPS6172679U/ja active Pending