JPS61183529U - - Google Patents
Info
- Publication number
- JPS61183529U JPS61183529U JP6721186U JP6721186U JPS61183529U JP S61183529 U JPS61183529 U JP S61183529U JP 6721186 U JP6721186 U JP 6721186U JP 6721186 U JP6721186 U JP 6721186U JP S61183529 U JPS61183529 U JP S61183529U
- Authority
- JP
- Japan
- Prior art keywords
- film made
- layer film
- film
- metal
- surface protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
図は本考案の一実施例の表面保護膜を有する半
導体装置の断面図である。
１……シリコン基板、２……ＳｉＯ２膜、３…
…不純物拡散素子領域、４……オーミツクコンタ
クト層、５……Ａｌ膜（一層目配線）、６……Ａ
ｌ２Ｏ３膜、７……ＳｉＯ２中間絶縁膜、８……
Ｔｉ膜、９……Ｐｔ膜、１０……Ａｕ膜、１１…
…Ａｕバンプ端子、１２……ポリイミド膜、１３
……Ａｌ膜、１４……Ａｌ２Ｏ３膜。
The figure is a sectional view of a semiconductor device having a surface protection film according to an embodiment of the present invention. 1... Silicon substrate, 2... SiO 2 film, 3...
...Impurity diffusion element region, 4...Ohmic contact layer, 5...Al film (first layer wiring), 6...A
l 2 O 3 film, 7... SiO 2 intermediate insulating film, 8...
Ti film, 9...Pt film, 10...Au film, 11...
...Au bump terminal, 12...Polyimide film, 13
...Al film, 14...Al 2 O 3 film.
Claims (1)
表面保護膜が絶縁性樹脂からなる下層膜、金属か
らなる中間層膜および該金属の絶縁性化合物から
なる上層膜により構成されていることを特徴とす
る半導体装置。 A semiconductor device having a surface protective film, wherein the surface protective film is composed of a lower layer film made of an insulating resin, an intermediate layer film made of a metal, and an upper layer film made of an insulating compound of the metal. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6721186U JPS61183529U (en) | 1986-05-02 | 1986-05-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6721186U JPS61183529U (en) | 1986-05-02 | 1986-05-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61183529U true JPS61183529U (en) | 1986-11-15 |
Family
ID=30600820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6721186U Pending JPS61183529U (en) | 1986-05-02 | 1986-05-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61183529U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5179573A (en) * | 1975-01-06 | 1976-07-10 | Hitachi Ltd | HAISENSONOHOGOHOHO |
| JPS51102585A (en) * | 1975-03-07 | 1976-09-10 | Hitachi Ltd | HANDOTA ISOCHI |
| JPS539470A (en) * | 1976-07-15 | 1978-01-27 | Hitachi Ltd | Semiconductor device |
-
1986
- 1986-05-02 JP JP6721186U patent/JPS61183529U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5179573A (en) * | 1975-01-06 | 1976-07-10 | Hitachi Ltd | HAISENSONOHOGOHOHO |
| JPS51102585A (en) * | 1975-03-07 | 1976-09-10 | Hitachi Ltd | HANDOTA ISOCHI |
| JPS539470A (en) * | 1976-07-15 | 1978-01-27 | Hitachi Ltd | Semiconductor device |