JPH028153U - - Google Patents
Info
- Publication number
- JPH028153U JPH028153U JP8550288U JP8550288U JPH028153U JP H028153 U JPH028153 U JP H028153U JP 8550288 U JP8550288 U JP 8550288U JP 8550288 U JP8550288 U JP 8550288U JP H028153 U JPH028153 U JP H028153U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semi
- semiconductor substrate
- insulating semiconductor
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図及び第２図は本考案の第１及び第２の実
施例を説明するための半導体チツプの断面図、第
３図は従来の半導体装置を説明するための半導体
チツプの断面図である。
１……半絶縁性ＧａＡｓ基板、２……酸化シリ
コン膜、３……窒化シリコン膜、４……電極、５
……酸化シリコン膜、６……開孔部、７……窒化
シリコン膜、８……開孔部、９……Ａｕ／Ｐｔ／
Ｔｉ層、１０……Ａｕ層、１１……開孔部、１２
……Ａｕ／Ｐｔ／Ｔｉ層、１３……窒化シリコン
層、１４……Ａｕ／Ｐｔ／Ｔｉ層、１５……Ａｕ
層。
1 and 2 are cross-sectional views of a semiconductor chip for explaining the first and second embodiments of the present invention, and FIG. 3 is a cross-sectional view of a semiconductor chip for explaining a conventional semiconductor device. . DESCRIPTION OF SYMBOLS 1... Semi-insulating GaAs substrate, 2... Silicon oxide film, 3... Silicon nitride film, 4... Electrode, 5
...Silicon oxide film, 6...Opening part, 7...Silicon nitride film, 8...Opening part, 9...Au/Pt/
Ti layer, 10... Au layer, 11... Opening part, 12
...Au/Pt/Ti layer, 13...Silicon nitride layer, 14...Au/Pt/Ti layer, 15...Au
layer.
Claims (1)
板の上面に設けた番１の電極と、前記半絶縁性半
導体基板の下面に設けて前記第１の電極の下面を
露出させる開孔部と、前記開孔部内に設けて前記
第１の電極と接続する第２の電極と、前記第１の
電極の上面又は前記第２の電極の下面に設けた誘
電体層と、前記第１及び第２の電極を容量部の一
方の電極とし前記誘電体層を介して設けた容量部
の他方の電極とを有することを特徴とする半導体
装置。 a semi-insulating semiconductor substrate, a first electrode provided on the top surface of the semi-insulating semiconductor substrate, and an opening provided on the bottom surface of the semi-insulating semiconductor substrate to expose the bottom surface of the first electrode; a second electrode provided in the opening and connected to the first electrode; a dielectric layer provided on the upper surface of the first electrode or the lower surface of the second electrode; A semiconductor device characterized in that the electrode is one electrode of a capacitive part and the other electrode of the capacitive part is provided with the dielectric layer interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8550288U JPH028153U (en) | 1988-06-27 | 1988-06-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8550288U JPH028153U (en) | 1988-06-27 | 1988-06-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH028153U true JPH028153U (en) | 1990-01-19 |
Family
ID=31310170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8550288U Pending JPH028153U (en) | 1988-06-27 | 1988-06-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH028153U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0399461A (en) * | 1989-09-12 | 1991-04-24 | Mitsubishi Electric Corp | Semiconductor device provided with mim capacitor |
-
1988
- 1988-06-27 JP JP8550288U patent/JPH028153U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0399461A (en) * | 1989-09-12 | 1991-04-24 | Mitsubishi Electric Corp | Semiconductor device provided with mim capacitor |