JPS6281032U - - Google Patents
Info
- Publication number
- JPS6281032U JPS6281032U JP17177485U JP17177485U JPS6281032U JP S6281032 U JPS6281032 U JP S6281032U JP 17177485 U JP17177485 U JP 17177485U JP 17177485 U JP17177485 U JP 17177485U JP S6281032 U JPS6281032 U JP S6281032U
- Authority
- JP
- Japan
- Prior art keywords
- recess
- semiconductor element
- emitter
- directly above
- base junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例を示し、ａは平面図
、ｂはａのＡ―Ａ線断面図、第２図はＵＳＥを使
つた感圧トランジスタの断面図、第３図は従来の
ＡＳＥを使つた感圧トランジスタの断面図、第４
図は本考案の別の実施例を示し、ａは平面図、ｂ
はａのＢ―Ｂ線断面図である。
１：エミツタ層、２：ベース層、３：コレクタ
層、４：台座、７：凹部、８：接着剤、９：加圧
板、１０：感圧チツプ、１１：シリコン基板、２
０：トランジスタ。
Fig. 1 shows an embodiment of the present invention, a is a plan view, b is a sectional view taken along the line A-A of a, Fig. 2 is a sectional view of a pressure sensitive transistor using USE, and Fig. 3 is a conventional one. Cross-sectional view of pressure-sensitive transistor using ASE, No. 4
The figures show another embodiment of the invention, a is a plan view, b
is a cross-sectional view taken along line BB of a. 1: emitter layer, 2: base layer, 3: collector layer, 4: pedestal, 7: recess, 8: adhesive, 9: pressure plate, 10: pressure sensitive chip, 11: silicon substrate, 2
0: Transistor.
Claims (1)
たがつて固定され、半導体素体は該凹部の縁部の
直上にエミツタ・ベース接合を有し、半導体素体
の上面には凹部の中心の直上の位置において加圧
板が面接触することを特徴とする感圧トランジス
タ。 A semiconductor element is fixed on a pedestal having a recess, spanning the recess, the semiconductor element has an emitter-base junction directly above the edge of the recess, and the upper surface of the semiconductor element has an emitter-base junction at the center of the recess. A pressure-sensitive transistor characterized in that a pressure plate makes surface contact at a position directly above it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17177485U JPS6281032U (en) | 1985-11-08 | 1985-11-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17177485U JPS6281032U (en) | 1985-11-08 | 1985-11-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6281032U true JPS6281032U (en) | 1987-05-23 |
Family
ID=31107711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17177485U Pending JPS6281032U (en) | 1985-11-08 | 1985-11-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6281032U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0290029A (en) * | 1988-09-28 | 1990-03-29 | Agency Of Ind Science & Technol | Detecting device for torque |
-
1985
- 1985-11-08 JP JP17177485U patent/JPS6281032U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0290029A (en) * | 1988-09-28 | 1990-03-29 | Agency Of Ind Science & Technol | Detecting device for torque |