JPS616845A - Production of thermal sprayed substrate - Google Patents

Production of thermal sprayed substrate

Info

Publication number
JPS616845A
JPS616845A JP12652084A JP12652084A JPS616845A JP S616845 A JPS616845 A JP S616845A JP 12652084 A JP12652084 A JP 12652084A JP 12652084 A JP12652084 A JP 12652084A JP S616845 A JPS616845 A JP S616845A
Authority
JP
Japan
Prior art keywords
substrate
sprayed
thermal sprayed
thermal
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12652084A
Other languages
Japanese (ja)
Inventor
Toshinobu Sekiba
関場 利信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP12652084A priority Critical patent/JPS616845A/en
Publication of JPS616845A publication Critical patent/JPS616845A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • H01L21/4878Mechanical treatment, e.g. deforming
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/44Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To obtain a thermal sprayed substrate whose mounting face has good flatness, by providing the metal substrate with concave warpage before the sandblasting process. CONSTITUTION:A 1.5mm. thick aluminum plate is press cut in an ordinary manner to obtain a 7cm long and 4cm wide metal substrate 1 with fitting holes 4. When this substrate is packaged, it is mounted on a radiating plate while the face thereof having shear drop 11 due to the press cutting (lower face) is faced to the radiating plate so that the opposite face (upper face) is thermal sprayed. The substrate is then provided with warpage of a magnitude (d) of about 0.15mm. such that the thermal spraying face becomes concave. The thermal spraying face is wholly roughened by the ordinary sandblasting. The metal substrate 1, after the sandblasting, obtains good flatness with little warpage. Alumina ceramics is thermal sprayed on the substrate to form an insulation layer 2 and then copper is thermal sprayed on the surface of the insulation layer 2 and on the surface of the metal substrate not coated with ceramics so as to form a thermal sprayed film 3.

Description

【発明の詳細な説明】 [発明の技術分野] 本発明は半導体放熱板に取り付は使用される溶射基板の
製造方法に関するもので、特にモジュール等の半導体装
置の溶射基板の製造方法として使用されるものである。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for manufacturing a thermal sprayed substrate that is used for mounting on a semiconductor heat sink, and in particular is used as a method for manufacturing a thermal sprayed substrate for semiconductor devices such as modules. It is something that

[発明の技術的背景] 第2図に代表的な溶射基板の構造を示す。 この構造は
本発明の製造方法によるものと従来方法によるものとほ
ぼ同一である。 第2図(a )および(b)は溶射基
板Aのそれぞれ平面図および側面図である。 1は金属
基板(例えばアルミ基板)、2は絶縁物溶射膜(例えば
セラミック溶射膜)、3は金属溶射膜(例えば銅溶射膜
)である。
[Technical Background of the Invention] FIG. 2 shows the structure of a typical thermal sprayed substrate. This structure is almost the same as that produced by the manufacturing method of the present invention and that produced by the conventional method. FIGS. 2(a) and 2(b) are a plan view and a side view of the thermal sprayed substrate A, respectively. 1 is a metal substrate (for example, an aluminum substrate), 2 is an insulating sprayed film (for example, a ceramic sprayed film), and 3 is a metal sprayed film (for example, a copper sprayed film).

第4図に従来の溶射基板の製造方法を断面図で示す。 
この製造方法は先ず (1)アルミニウム又は銅系金属等のように放熱性の良
い金属材料をプレス打ち扱きして金属基板1をつくる(
第4図(a))。
FIG. 4 shows a sectional view of a conventional method for manufacturing a thermal sprayed substrate.
This manufacturing method first involves (1) forming a metal substrate 1 by pressing a metal material with good heat dissipation, such as aluminum or copper-based metal (
Figure 4(a)).

(2)金属基板1の片面は溶射膜との結合を良く覆るた
め溶射の前処理としてサンドブラストを施し粗面にする
(第4図(b))。 サンドブラストにより金属基板1
は凸状のそりdを生ずる。
(2) One side of the metal substrate 1 is roughened by sandblasting as a pretreatment for thermal spraying in order to better cover the bond with the thermal sprayed film (FIG. 4(b)). Metal substrate 1 by sandblasting
produces a convex warp d.

(3)鉄等の金属マスクを金属基板1に当て、セミラッ
クや銅を溶射して所定の回路パターンを形成する(第4
図(C))。
(3) Apply a metal mask such as iron to the metal substrate 1 and spray semilac or copper to form a predetermined circuit pattern (fourth
Figure (C)).

[背景技術の問題点] この溶射基板は半導体等を搭載したのち放熱板(放熱フ
ィン)10(第3図参照)にねぢ止等で密着固定して使
用される。 溶射基板面と放熱板面とは熱伝導を良くす
るため完全に密着することが必要で、そのため溶射基板
の取り付は面の平面度が良いことが要求される。 従来
の製造方法の大きな問題点はこの平面度が得られないこ
とである。 この溶射基板の平面度が−得られない理由
は溶射の前処理として施すサンドブラスト処理によりそ
りが発生するからである。 このそり量(第4図(b)
に示すd)は基板の大きさ、板厚、サンドブラストの強
弱によって大小がある。 例えば溶射基板の長さ7cm
 、幅4cm 、厚さ 1.5mmのアルミニウム板で
約0.1〜0.3mmのそり量が発生する。 また発生
したそりを是正するため溶射基板に外力を加えるとセミ
ラック膜の亀裂等の不良が発生する。
[Problems with Background Art] This thermal sprayed substrate is mounted with semiconductors and the like and then used by being tightly fixed to a heat dissipation plate (radiation fin) 10 (see FIG. 3) with screws or the like. The surface of the sprayed substrate and the surface of the heat sink must be in perfect contact with each other to improve heat conduction, and for this reason, it is required that the surfaces have good flatness when mounting the sprayed substrate. A major problem with conventional manufacturing methods is that this flatness cannot be achieved. The reason why the flatness of the thermal sprayed substrate cannot be obtained is that warpage occurs due to the sandblasting treatment performed as a pretreatment for thermal spraying. This amount of warpage (Fig. 4 (b)
The size of d) shown in Figure 1 varies depending on the size of the board, the thickness of the board, and the intensity of sandblasting. For example, the length of the sprayed board is 7 cm.
, an aluminum plate with a width of 4 cm and a thickness of 1.5 mm causes a warpage amount of approximately 0.1 to 0.3 mm. Furthermore, if an external force is applied to the sprayed substrate to correct the warpage that has occurred, defects such as cracks in the semilac film will occur.

[発明の目的] この発明は、前記問題点を解決し取り付は面の平面度の
良い溶射基板の製造方法を提供することを目的とする。
[Object of the Invention] It is an object of the present invention to provide a method for manufacturing a thermal sprayed substrate that solves the above-mentioned problems and has a good flatness of the mounting surface.

[発明の概要] 溶射基板の製造において基板と溶射膜との結合を強くす
るため、あらかじめ溶射される基板表面をサンドブラス
トして粗面にしておく必要がある。
[Summary of the Invention] In order to strengthen the bond between the substrate and the sprayed film in the production of a thermally sprayed substrate, it is necessary to roughen the surface of the substrate to be thermally sprayed by sandblasting in advance.

しかしこのサンドブラストにより該面は凸状に湾曲する
。 本発明は、サンドブラスト工程の前にあらかじめ金
属基板に凹状のそりを与えておきサンドブラスト処理で
平坦面が得られるようにしたものである。
However, this sandblasting causes the surface to curve into a convex shape. In the present invention, a concave warp is given to the metal substrate in advance before the sandblasting process so that a flat surface can be obtained by the sandblasting process.

すなわち本発明は、溶射面が片面の溶射基板の製造方法
であって、金属基板をプレス打抜きで製作したのち、該
プレス打抜きによるだれ側の金属基板面と反対の基板面
に凹状の(0,05〜1.00 )IIIIIlのそり
を与え、次に凹状の上記反対基板面をシンドブラスト処
理したのち、該反対基板面に絶縁物又は金属を溶射して
所定のパターンを形成することを特徴とする溶射基板の
製造方法である。
That is, the present invention is a method for manufacturing a thermal sprayed substrate having a single thermal sprayed surface, in which a metal substrate is manufactured by press punching, and then a concave (0, 05 to 1.00) IIIIIIl warpage is applied, and then the concave opposite substrate surface is subjected to a sindblasting treatment, and then an insulating material or metal is thermally sprayed on the opposite substrate surface to form a predetermined pattern. This is a method for manufacturing a thermal sprayed substrate.

金属基板をプレス打抜きで製作するとき、加圧された金
属基板の周縁は基板面より下方にだれを生じ、反対の基
板面にはいわゆるパリが生ずる。
When a metal substrate is manufactured by press punching, the periphery of the pressurized metal substrate sag downward from the substrate surface, and a so-called burr occurs on the opposite substrate surface.

放熱板との密着を良くするため金属基板の゛だれ側の面
を放熱板との取り付は面・とし、その反対面を溶射面(
サンドブラスト面)とする。 また特許請求の範囲第1
項記載のそりは、金属基板の長手方向<X−X軸と呼ぶ
)或は幅方向(Y−Y軸)等の断面図形において、基板
面の点から基板の両端を結ぶ弦(線分)にいたる最大垂
直距離をいう。
In order to improve the adhesion with the heat sink, the sloping side of the metal board should be attached to the heat sink, and the opposite side should be the sprayed surface (
(sandblast surface). Also, claim 1
The warpage described in Section 1 is a chord (line segment) that connects both ends of the board from a point on the board surface in a cross-sectional figure such as the longitudinal direction of the metal board (referred to as the X-X axis) or the width direction (Y-Y axis). This is the maximum vertical distance that can be reached.

例えば第1図および第4図においてdで示す距離をそり
とする。 このそりはx−X軸だけ1方向に与えるもの
、又はX−xおよびY−Y軸の2方向のいわゆる球面状
にするもの、どちらでも効果がある。 あらかじめ金属
基板に与えるそりの量は基板の大きさ、板厚およびサン
ドブラストの強弱等によって大小がある。 そりの範囲
(0,05〜1.00 ) mmは実用される溶射基板
の寸法構造およびサンドブラスト処理条件を考慮し、試
行によって決められたものである。 そりの量0.05
WIII1未満はサンドブラスト処理で生ずるそりを補
償するには不足し、1.00mff1以上はサンドブラ
スト処理後にそりが残り不適当である。
For example, the distance indicated by d in FIGS. 1 and 4 is the curvature. It is effective whether the warp is applied in one direction along the x-X axis or in a so-called spherical shape in two directions, the X-x and Y-Y axes. The amount of warpage given to the metal substrate in advance varies depending on the size of the substrate, the thickness of the substrate, the intensity of sandblasting, etc. The range of warpage (0.05 to 1.00 mm) was determined through trials in consideration of the dimensional structure of the thermally sprayed substrate to be used and the sandblasting treatment conditions. Warpage amount 0.05
WIII1 is insufficient to compensate for warping caused by sandblasting, and 1.00mff1 or more is inappropriate because warpage remains after sandblasting.

[発明の実施例コ 第1図(a )ないしくC)は本発明の製造方法の一実
施例を断面図をもって示したものであり、第2図(a 
)および(b)は本発明により製作された溶射基板のそ
れぞれ平面図および側面図である。 厚さ 1.5m+
nのアルミニウム板から通常のプレス打抜きにて取り付
は穴4を有し長さ7cm 、幅4cmの金属基板1を作
る。 この基板を実装するときプレス時の゛ばり″が取
り付けの密着度を阻害しないようにプレス打抜きによる
だれ11の基板面(第1図にて下面)を放熱板との取り
付は面とし、このだれ側基板面と反対の基板面(第1図
にて上面)を溶射面とする。 次に基板1の溶射面が凹
形になるよう約0.15mmのそりのld  (第1図
)を与える。 そりを与える方法は特に限定されないが
、この実施例では金型を使用して強制的に与えた。 第
1図(a )は打抜き後、そりを与えた基板1の断面図
を示す。 次に通常のυ−ンドブラスト法(例えば空気
圧力5kG/c…2、砂粒子メツシュ#80)により溶
射面の全表面を粗面とする。 サンドブラストにより溶
射面は凸状の変化をするが前記の通り凹状のそりがあら
かじめ与えられているのでサンドブラスト後の金属基板
1はそりのほとんどない平面度のよい基板となる。
[Embodiment of the Invention Figures 1 (a) to C) show an embodiment of the manufacturing method of the present invention with cross-sectional views, and Figure 2 (a)
) and (b) are a plan view and a side view, respectively, of a thermal sprayed substrate manufactured according to the present invention. Thickness 1.5m+
A metal substrate 1 having mounting holes 4 and having a length of 7 cm and a width of 4 cm is made by ordinary press punching from a No. n aluminum plate. When mounting this board, the board surface (bottom surface in Figure 1) of the sag 11 formed by press punching is made a surface for mounting with the heat sink, so that "burrs" during pressing do not impede the adhesion of the mounting. The substrate surface opposite to the droop side substrate surface (top surface in Fig. 1) is the sprayed surface.Next, warp ld of about 0.15 mm (Fig. 1) so that the sprayed surface of the substrate 1 has a concave shape. The method for imparting warpage is not particularly limited, but in this example, a mold was used to forcibly impart warpage. FIG. Next, the entire surface of the sprayed surface is roughened by the usual υ-nd blasting method (for example, air pressure 5 kG/c...2, sand particle mesh #80).The sprayed surface changes into a convex shape by sandblasting, but as mentioned above. Since the concave warpage is provided in advance, the metal substrate 1 after sandblasting has almost no warpage and has good flatness.

第1図(b)にこの状態の基板1の断面を示す。FIG. 1(b) shows a cross section of the substrate 1 in this state.

次にプラズマ溶射装置を用いて部分的にアルミナセラミ
ックを溶射し絶縁層2を形成したのち、さらに半導体素
子の半田付けを容易にするため銅を絶縁層2の表面とセ
ラミックが溶射されていない金属基板面とに溶射し溶射
膜を形成する。 この溶射膜の厚さは、アルミナセラミ
ック膜2が(0,15〜0.20 ) mm、銅溶射膜
3が(0,10〜0.15 ) mm程度である。 第
3図は自動車用に用いられる三相交流電圧を整流するた
めの半導体装置(通称RAと呼ばれる)で、溶射基板A
の使用例を示す。 同図において7は半導体用リード、
8は半導体素子で半田9により溶射基板上の銅溶射膜3
に固着される。 ケース6および半導体素子8等を搭載
した溶射基板は、取り付はボルト5により放熱板(放熱
フィン>10に密着して取り付けられる。
Next, alumina ceramic is partially sprayed using a plasma spraying device to form an insulating layer 2, and then copper is coated on the surface of the insulating layer 2 and the metal on which the ceramic is not sprayed, in order to facilitate soldering of semiconductor elements. Thermal spraying is performed on the substrate surface to form a thermally sprayed film. The thickness of the sprayed coating is about (0.15 to 0.20) mm for the alumina ceramic coating 2 and about (0.10 to 0.15) mm for the sprayed copper coating 3. Figure 3 shows a semiconductor device (commonly called RA) for rectifying three-phase AC voltage used in automobiles.
Here is an example of its usage. In the figure, 7 is a semiconductor lead;
8 is a semiconductor element, which is coated with a copper sprayed film 3 on a sprayed substrate by solder 9.
is fixed to. The thermal sprayed substrate on which the case 6, semiconductor element 8, etc. are mounted is attached with bolts 5 so as to be in close contact with the heat sink (radiating fins>10).

[発明の効果] 溶射基板の金属基板に大きさ7cm x4cm 、厚さ
1.5mmのアルミニウム板を使用した場合、従来の製
造方法では基板のそり置駒0.15m111程度残った
のが、あらかじめ約0.15mmのそりを与えた本発明
の製造方法ではそり量が0.06mm以下となり平面度
が良好で熱伝導の良い溶射基板が得られる。
[Effects of the invention] When using an aluminum plate with a size of 7 cm x 4 cm and a thickness of 1.5 mm as the metal substrate of the thermal sprayed substrate, the conventional manufacturing method left about 0.15 m111 of warped pieces on the board, but about In the manufacturing method of the present invention, which gives a warpage of 0.15 mm, the amount of warpage is 0.06 mm or less, and a thermal sprayed substrate with good flatness and good thermal conductivity can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a >ないしくC)は本発明の製造方法とその
工程を説明するためのもので、それぞれそりを与えに後
、サンドブラスト後、および溶射膜形成後の金属基板或
は溶射基板の断面図、第2図(a )および<b>は、
本発明または従来の製造方法により製造された溶射基板
の平面図および側面図、第3図(a )および(b )
は溶射基板の実装例を示す自動車用三相交流整流装置の
平面図と断面図、第4図(a )ないしくC)は従来の
製造方法とその工程を説明するためのものでそれぞれプ
レス打抜き後、サンドブラスト後および溶射膜形成後の
金属基板或は溶射基板の断面図である。 1・・・金属基板(アルミニウム板)、 2・・・絶縁
物溶射膜(セラミック溶射膜)、 3・・・金属溶射膜
(銅溶射膜)、 11・・・だれ、 △・・・溶射基板
、d・・・そりの量。 特許出願人 株式会社 東  芝 第1図 第2図
Fig. 1 (A > C) is for explaining the manufacturing method and its steps of the present invention, and shows the results of the manufacturing method of the present invention and its steps, respectively. The cross-sectional views, FIGS. 2(a) and <b>, are
Plan and side views of thermal sprayed substrates manufactured by the present invention or conventional manufacturing methods, FIGS. 3(a) and (b)
Figures 4(a) to 4(c) are a plan view and a cross-sectional view of a three-phase AC rectifier for an automobile showing an example of mounting a thermal sprayed board, and Figures 4(a) to 4(c) are for explaining the conventional manufacturing method and its process, and are respectively press punched. FIG. 3 is a cross-sectional view of a metal substrate or a thermal spray substrate after sandblasting and after forming a thermal spray film. 1... Metal substrate (aluminum plate), 2... Insulating sprayed film (ceramic sprayed film), 3... Metal sprayed film (copper sprayed film), 11... Drop, △... Thermal sprayed substrate , d...Amount of warpage. Patent applicant: Toshiba Corporation Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 1 溶射面が片面の溶射基板の製造方法であって、金属
基板をプレス打抜きで製作したのち、該プレス打抜きに
よるだれ側の金属基板面と反対の基板面に凹状の(0.
05〜1.00)mmのそりを与え、次に上記反対基板
面をサンドブラスト処理したのち、該反対基板面に絶縁
物又は金属を溶射して所定のパターンを形成することを
特徴とする溶射基板の製造方法。
1 A method for manufacturing a thermal sprayed substrate with a single thermal sprayed surface, in which a metal substrate is manufactured by press punching, and then a concave (0.
A thermal sprayed substrate characterized in that a warp of 0.05 to 1.00 mm is applied, and then the opposite substrate surface is sandblasted, and then an insulator or metal is thermally sprayed on the opposite substrate surface to form a predetermined pattern. manufacturing method.
JP12652084A 1984-06-21 1984-06-21 Production of thermal sprayed substrate Pending JPS616845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12652084A JPS616845A (en) 1984-06-21 1984-06-21 Production of thermal sprayed substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12652084A JPS616845A (en) 1984-06-21 1984-06-21 Production of thermal sprayed substrate

Publications (1)

Publication Number Publication Date
JPS616845A true JPS616845A (en) 1986-01-13

Family

ID=14937238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12652084A Pending JPS616845A (en) 1984-06-21 1984-06-21 Production of thermal sprayed substrate

Country Status (1)

Country Link
JP (1) JPS616845A (en)

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