JPH1041441A - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing methodInfo
- Publication number
- JPH1041441A JPH1041441A JP19101596A JP19101596A JPH1041441A JP H1041441 A JPH1041441 A JP H1041441A JP 19101596 A JP19101596 A JP 19101596A JP 19101596 A JP19101596 A JP 19101596A JP H1041441 A JPH1041441 A JP H1041441A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- metal
- electric circuit
- semiconductor device
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置に関
し、特に高い放熱性が要求される高出力半導体装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a high-power semiconductor device requiring high heat dissipation.
【０００２】[0002]
【従来の技術】図２（ａ）は、従来の高出力半導体装置
を示す平面図、図２（ｂ）は、同断面図である。図２に
示すように、セラミックにタングステン，モリブデン−
マンガン等を塗布・焼成し、その上からＮｉ，Ａｕメッ
キを施して電気回路基板２が構成され、電気回路基板２
が銅または銅−タングステンからなる放熱板３の凸部４
に銀−銅ろう等の金属ろう材で固着される。また電気回
路基板２上のパターンには半導体素子１が搭載され、他
のパターンや外部リードと金線で接続された後、セラミ
ックキャップ７で気密封止される。2. Description of the Related Art FIG. 2A is a plan view showing a conventional high-output semiconductor device, and FIG. 2B is a sectional view thereof. As shown in FIG. 2, tungsten and molybdenum
The electric circuit board 2 is formed by applying and baking manganese or the like, and then applying Ni and Au plating thereon.
Of the heat sink 3 made of copper or copper-tungsten
Is fixed with a metal brazing material such as silver-copper brazing. The semiconductor element 1 is mounted on a pattern on the electric circuit board 2, connected to other patterns or external leads by gold wires, and hermetically sealed with a ceramic cap 7.
【０００３】このように構成された高出力半導体装置に
おいて、放熱板３には銅等の放熱性の高い金属材料が用
いられ、電気回路基板２には、絶縁材料のなかでは比較
的放熱性の高いベリリア，窒化アルミ等のセラミック材
料が用いられる。In the high-power semiconductor device configured as described above, a metal material having a high heat dissipation property such as copper is used for the heat dissipation plate 3, and a relatively heat dissipation property among the insulating materials is used for the electric circuit board 2. Ceramic materials such as high beryllia and aluminum nitride are used.
【０００４】ところが、銅，銅タングステン等の金属放
熱板３は、ベリリア，窒化アルミ等のセラミック材料の
電気回路基板２に比べて、熱膨張率が高く、融点８００
℃前後のＡｇ−Ｃｕロウ材等にてロウ付けを行うと、電
気回路基板２に比べて金属放熱板３の収縮量が大きいた
めに、基板２の内部に大きな熱応力が発生し、基板２に
クラックが発生する可能性がある。However, the metal radiator plate 3 made of copper, copper tungsten or the like has a higher coefficient of thermal expansion than the electric circuit board 2 made of a ceramic material such as beryllia or aluminum nitride and has a melting point of 800.
When the brazing is performed with an Ag-Cu brazing material or the like at about 0 ° C., since the shrinkage amount of the metal radiator plate 3 is larger than that of the electric circuit board 2, a large thermal stress is generated inside the board 2, Cracks may occur.
【０００５】以上説明した問題を回避するために、金属
放熱板３と電気回路基板２との接合面積をできるだけ小
さくし、ロウ付け後の電気回路基板２内部での熱応力を
低減する必要があり、従来の半導体装置では、図２に示
すように、金属放熱板３の電気回路基板２との接合部に
凸部４を設け、接合面積を小さくした構造を備えてい
る。In order to avoid the problems described above, it is necessary to reduce the bonding area between the metal heat sink 3 and the electric circuit board 2 as much as possible and to reduce the thermal stress inside the electric circuit board 2 after brazing. As shown in FIG. 2, the conventional semiconductor device has a structure in which a convex portion 4 is provided at a joint portion between the metal heat sink 3 and the electric circuit board 2 to reduce the joint area.
【０００６】図３は、図２に示した従来の高出力半導体
装置に使用される金属放熱板の製造工程を示す模式図で
ある。図３に示すように、金属素材を金属片または板状
連続体６としてプレス金型５に供給し、圧縮加工するこ
とによって金属放熱板３の凸部４の形成および外形の打
ち抜きを行い、その後、固定用の丸穴をプレスまたは切
削加工にて形成していた。FIG. 3 is a schematic view showing a manufacturing process of a metal heat sink used in the conventional high-power semiconductor device shown in FIG. As shown in FIG. 3, the metal material is supplied to a press die 5 as a metal piece or a plate-shaped continuous body 6, and is formed by compression to form the convex portion 4 of the metal heat radiating plate 3 and punch out the outer shape. The fixing round hole was formed by pressing or cutting.
【０００７】[0007]
【発明が解決しようとする課題】半導体素子の発熱は、
電気回路基板２及び放熱板３中を片側４５度の広がりを
もって発散していくことが広く知られている。The heat generated by the semiconductor element is:
It is widely known that the light diverges in the electric circuit board 2 and the heat radiating plate 3 with a spread of 45 degrees on one side.
【０００８】図２に示す従来の高出力半導体装置では、
放熱板３の凸部４が側面に傾斜構造を持たない垂直な形
状に形成されているため、前述した熱発散の広がりを考
慮すると、基板２の熱応力によるクラックを防止するた
めに放熱板３と基板２の接合面積を小さくしたときに、
放熱性が悪くなるという相反する問題があった。In the conventional high-power semiconductor device shown in FIG.
Since the convex portion 4 of the heat sink 3 is formed in a vertical shape having no inclined structure on the side surface, in consideration of the above-mentioned spread of heat dissipation, the heat sink 3 is required to prevent cracks due to thermal stress of the substrate 2. When the bonding area between the substrate and the substrate 2 is reduced,
There is a contradictory problem that heat dissipation becomes worse.
【０００９】この問題を解決するため、特開平６−２０
４３６６号に開示された技術では、放熱板の凸部が基板
との接合面から下方に向けて、漸次大きくなるような傾
斜面を持たせているが、加工の難しさから凸部を放熱板
とは別体のものとして製造し、これをソルダ等で放熱板
に固着する構造となっており、逆に放熱性を悪くしてし
まうという結果を招いていた。また、凸部を一体構造と
した放熱板を前述したプレス加工によって製造したので
は、半導体装置のコストが高くなるという問題点があっ
た。In order to solve this problem, Japanese Patent Laid-Open Publication No. 6-20
In the technique disclosed in Japanese Patent No. 4366, the convex portion of the heat sink has an inclined surface that gradually increases downward from the joint surface with the substrate, but the convex portion is formed by the heat sink due to difficulty in processing. In this case, the heat sink is manufactured separately from the heat sink, and the heat sink is fixed to the heat radiating plate with solder or the like. In addition, when a heat sink having an integral structure of the projections is manufactured by the above-described press working, there is a problem that the cost of the semiconductor device is increased.
【００１０】本発明の目的は、放熱効果の大きい半導体
装置およびその製造方法を提供することにある。An object of the present invention is to provide a semiconductor device having a large heat radiation effect and a method for manufacturing the same.
【００１１】[0011]
【課題を解決するための手段】前記目的を達成するた
め、本発明に係る半導体装置は、高い放熱性が要求され
る半導体装置であって、電気回路基板と金属放熱板とを
有し、電気回路基板は、半導体素子を搭載したものであ
り、金属放熱板は、電気回路基板の熱を放熱するもので
あって、板面に凸部が隆起して一体に成形されたもので
あり、凸部は、電気回路基板を支持するものであって、
金属放熱板の板面から立上る側面が傾斜構造である。In order to achieve the above object, a semiconductor device according to the present invention is required to have high heat dissipation, and has an electric circuit board and a metal heat dissipation plate. The circuit board has a semiconductor element mounted thereon, and the metal heat radiating plate radiates heat of the electric circuit board. The part supports the electric circuit board,
The side surface that rises from the plate surface of the metal radiator plate has an inclined structure.
【００１２】また本発明に係る半導体装置の製造方法
は、半導体素子の搭載された電気回路基板の熱を放熱す
る金属放熱板を引抜き加工する半導体装置の製造方法で
あって、金属放熱板は、平板部と、回路基板を支持する
凸部とを有し、金属放熱板の素材を穴ダイスに押込み、
該素材の断面形状を、平板部と該平板部から一体に隆起
した凸部からなる金属放熱板の形状に引抜き、かつ凸部
の対向する側面に角度を付けて引抜くものである。Further, a method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device by drawing out a metal heat radiating plate for radiating heat of an electric circuit board on which a semiconductor element is mounted. It has a flat part and a convex part that supports the circuit board, and pushes the material of the metal heat sink into the hole die,
The cross-sectional shape of the material is drawn into the shape of a metal radiator plate comprising a flat plate portion and a convex portion integrally raised from the flat plate portion, and the material is drawn out at an angle to the side surface of the convex portion facing the metal heat radiating plate.
【００１３】[0013]
【作用】金属放熱板１個あたりの製造時間において、引
き抜き加工による場合、プレス加工による場合の１／５
で可能である。また、プレス加工の場合、引き落とした
部分の材料が無駄になるのに対して、引き抜き加工の場
合、材料の無駄がない。[Effect] In the manufacturing time per one metal heat radiating plate, 1/5 of the case of the drawing process and the case of the pressing process.
Is possible. Further, in the case of the press working, the material of the dropped portion is wasted, whereas in the case of the drawing work, there is no waste of the material.
【００１４】金属放熱板の凸部の幅寸法を漸次大きくな
るよう傾斜させた構造を有するために、引き抜き加工用
金型の摩耗が低減され、金型寿命が長くなる。Since the metal radiating plate has a structure in which the width of the convex portion is inclined so as to be gradually increased, the wear of the drawing die is reduced, and the life of the die is prolonged.
【００１５】[0015]
【発明の実施の形態】以下、本発明の一実施形態を図に
より説明する。図１（ａ）は、本発明の一実施形態に係
る半導体装置を示す平面図、図１（ｂ）は同断面図であ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. FIG. 1A is a plan view showing a semiconductor device according to one embodiment of the present invention, and FIG. 1B is a sectional view of the same.
【００１６】図１において本発明の一実施形態に係る半
導体装置は、高い放射性が要求されるものであり、電気
回路基板２と金属放熱板３とを有している。Referring to FIG. 1, a semiconductor device according to one embodiment of the present invention is required to have high radiation, and has an electric circuit board 2 and a metal radiating plate 3.
【００１７】電気回路基板２は、半導体素子１を搭載し
たものであり、アルミナまたはベリリア等のセラミック
の表面に、タングステンやモリブデンマンガン等の金属
被膜（配線パターン及びマウント部を含む）を焼成し、
その金属被膜上にＮｉめっき及びＡｕめっきを施し、金
属被膜のうちマウント部に半導体素子１を金−錫合金に
より搭載し、金属被膜のうち配線パターンと半導体素子
１の電極を金線で配線処理してある。また半導体素子１
は、セラミックキャップ７により気密封止されている。The electric circuit board 2 has the semiconductor element 1 mounted thereon, and a metal coating (including a wiring pattern and a mounting portion) such as tungsten or molybdenum manganese is fired on a ceramic surface such as alumina or beryllia.
Ni plating and Au plating are performed on the metal film, the semiconductor element 1 is mounted on a mount portion of the metal film by a gold-tin alloy, and a wiring pattern of the metal film and an electrode of the semiconductor element 1 are processed by a gold wire. I have. Semiconductor element 1
Are hermetically sealed by a ceramic cap 7.
【００１８】金属放熱板３は、銅等の熱放散性の良好な
金属からなり、電気回路基板２の熱を放熱するものであ
って、板面に凸部４が一体に隆起して成形されている。
凸部４は、電気回路基板２との接合面積を最小にして電
気回路基板２を支持するものであって、金属放熱板３の
板面から立上る側面４ａが傾斜構造になっており、凸部
４は、基板２との接合部から下方に向けて漸次幅方向に
広がる形状になっている。凸部４の側面４ａは、約４５
度の角度をもって傾斜している。The metal heat radiating plate 3 is made of a metal having good heat dissipation such as copper, and radiates heat of the electric circuit board 2. The convex portion 4 is integrally formed on the plate surface so as to protrude. ing.
The convex portion 4 supports the electric circuit board 2 by minimizing a bonding area with the electric circuit board 2, and the side surface 4 a rising from the plate surface of the metal radiator plate 3 has an inclined structure. The portion 4 has a shape that gradually widens in the width direction downward from the joint portion with the substrate 2. The side surface 4a of the convex portion 4 is approximately 45
It is inclined at an angle of degrees.
【００１９】電気回路基板２は、金属放熱板３の凸部４
に銀−銅ろう材で接合されている。The electric circuit board 2 is provided with the convex portions 4 of the metal radiator plate 3.
Are joined with silver-copper brazing material.
【００２０】半導体素子１からの発熱は、電気回路基板
２に伝わり金属放熱板３より放熱する。電気回路基板２
から金属放熱板３に熱が伝わるときには、垂直方向に対
して約４５°の角度をもつ広がりをもって伝わることが
知られている。Heat generated from the semiconductor element 1 is transmitted to the electric circuit board 2 and is radiated from the metal radiating plate 3. Electric circuit board 2
It is known that when heat is transmitted to the metal heat radiating plate 3, the heat is transmitted with a spread having an angle of about 45 ° with respect to the vertical direction.
【００２１】本発明の実施形態では、電気回路基板２を
支える凸部４の側面が約４５°の角度をもって傾斜し、
下方に向けて漸次幅方向に広がる形状となっているた
め、電気回路基板２の熱が金属放熱板３に効率よく伝わ
ることとなり、半導体素子１の熱を効率よく放散するこ
とができる。In the embodiment of the present invention, the side surface of the projection 4 supporting the electric circuit board 2 is inclined at an angle of about 45 °,
Since the shape gradually spreads downward in the width direction, the heat of the electric circuit board 2 is efficiently transmitted to the metal radiator plate 3, and the heat of the semiconductor element 1 can be efficiently dissipated.
【００２２】図２は、本発明の実施形態に係る半導体装
置の製造方法を示す図である。FIG. 2 is a diagram showing a method of manufacturing a semiconductor device according to an embodiment of the present invention.
【００２３】図１，図２に示すように本発明に用いる金
属放熱板３は、横方向に一定の板厚をもつ平板部３ａ
と、平板部３ａのほぼ中央から隆起した凸部４とからな
っており、引抜き加工に適した形状になっている。As shown in FIGS. 1 and 2, the metal radiator plate 3 used in the present invention has a flat plate portion 3a having a constant thickness in the lateral direction.
And a convex portion 4 protruding from substantially the center of the flat plate portion 3a, and has a shape suitable for drawing.
【００２４】そこで本発明では、金属放熱板３を引抜き
加工により製造することを特徴とするものである。Therefore, the present invention is characterized in that the metal heat sink 3 is manufactured by drawing.
【００２５】図２に示すように引抜き加工用の金型５
は、金属放熱板３の素材を押込む穴ダイス５ａを有して
いる。穴ダイス５ａは、金属放熱板素材８の断面形状
を、横長の矩形断面をなす平板部３ａの形状に引抜き加
工する穴ダイス５ａ1と、金属放熱板素材８の断面形状
を、平板部３ａの約中央から隆起した凸部４の形状に引
抜き加工する穴ダイス５ａ2とからなっている。さらに
穴ダイス５ａ2は、ダイスをなす稜線５ａ3が垂直方向か
ら約４５°内側に傾斜している。As shown in FIG. 2, a die 5 for drawing is used.
Has a hole die 5a into which the material of the metal heat sink 3 is pressed. Hole die 5a is a cross-sectional shape of the metal radiator plate material 8, and the hole die 5a 1 to drawing the shape of the flat plate portion 3a which forms an oblong rectangular cross-section, the cross-sectional shape of the metal radiator plate material 8, the flat plate portion 3a It consists hole die 5a 2 Metropolitan of drawing about the center raised shape of the convex portion 4. Moreover hole die 5a 2 are ridge 5a 3 forming the die is inclined from the vertical inwardly about 45 °.
【００２６】金属放熱板３の素材８を引抜き加工用金型
５の穴ダイス５ａに押込み、その素材８の断面形状を、
平板部３ａと平板部３ａから一体に隆起した凸部４から
なる金属放熱板３の形状に引抜き、かつ穴ダイス５ａ2
を使って凸部４の対向する側面４ａに角度を付けて引抜
く。The material 8 of the metal radiator plate 3 is pushed into the hole die 5a of the drawing die 5, and the sectional shape of the material 8 is
The metal die 3 is drawn into the shape of the metal heat radiating plate 3 including the flat plate portion 3a and the convex portion 4 integrally raised from the flat plate portion 3a, and the hole die 5a 2 is formed.
Then, the opposite side surface 4a of the convex portion 4 is pulled out at an angle by using.
【００２７】なお、金属放熱板３の素材は、軟化させて
穴ダイス５ａに押込むようにしてもよい。The material of the metal radiator plate 3 may be softened and pushed into the hole die 5a.
【００２８】次に引抜き加工により帯状に成形された金
属放熱板３を切断刃６にて引抜き方向と直交する方向に
個々にスライスし、金属放熱板３を完成させる。Next, the metal heat radiating plate 3 formed in a strip shape by the drawing process is individually sliced by the cutting blade 6 in a direction orthogonal to the drawing direction, and the metal heat radiating plate 3 is completed.
【００２９】引き抜き加工は高温，高圧下で行うと、穴
ダイス５ａ1と５ａ2の継目のコーナー部７が９０度付近
であると、製造中にコーナー部７の破損，摩耗が発生し
やすい。しかし、本発明においては、金属放熱板３の凸
部４の幅寸法を漸次大きくなるように側面４ａを傾斜さ
せた構造を有しているために、引き抜き加工用金型５の
コーナー部７の角度が９０度より小さくなり、金型の破
損が少なくなり、結果として金型寿命が長くなり、加工
費の低減につながる。The drawing is a high temperature, performed under high pressure, the hole die 5a 1 and 5a 2 of the corner portion 7 of the seam is in the vicinity of 90 degrees, breakage of the corner portions 7, the wear is likely to occur during manufacture. However, in the present invention, since the side surface 4a is inclined so that the width of the convex portion 4 of the metal heat radiating plate 3 is gradually increased, the corner portion 7 of the drawing die 5 is formed. Since the angle is smaller than 90 degrees, damage to the mold is reduced, and as a result, the life of the mold is prolonged, leading to a reduction in processing costs.
【００３０】[0030]
【発明の効果】以上説明したように本発明によれば、金
属放熱板を引き抜き加工にて形成するため、加工費，材
料費を低減することができる。As described above, according to the present invention, since the metal radiator plate is formed by drawing, the processing cost and material cost can be reduced.
【００３１】また、金属放熱板の凸部の幅寸法を漸次大
きくなるように傾斜させたため、放熱効果が大きく、引
き抜き加工用金型の摩耗が低減され、金型寿命が長くな
り、結果として、さらに加工を低減することができる。Also, since the width of the convex portion of the metal radiating plate is inclined so as to be gradually increased, the heat radiation effect is large, the wear of the drawing die is reduced, and the life of the die is prolonged. Further, processing can be reduced.
【図１】（ａ）は、本発明の一実施形態に係る半導体装
置を示す平面図、（ｂ）は同断面図である。FIG. 1A is a plan view showing a semiconductor device according to an embodiment of the present invention, and FIG. 1B is a sectional view thereof.
【図２】本発明の一実施形態に係る半導体装置の製造方
法を示す図である。FIG. 2 is a diagram illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.
【図３】（ａ）は、従来例を示す平面図、（ｂ）は同断
面図である。FIG. 3A is a plan view showing a conventional example, and FIG. 3B is a sectional view of the same.
【図４】従来の製造方法を示す断面図である。FIG. 4 is a cross-sectional view showing a conventional manufacturing method.
１ 半導体素子 ２ 電気回路基板 ３ 金属放熱板 ４ 凸部 ５ 引抜き加工用金型 ５ａ，５ａ1，５ａ2 穴ダイス1 semiconductor element 2 the electric circuit board 3 metal heat sink 4 protrusions 5 drawing die 5a, 5a 1, 5a 2 hole die
Claims (2)
って、 電気回路基板と金属放熱板とを有し、 電気回路基板は、半導体素子を搭載したものであり、 金属放熱板は、電気回路基板の熱を放熱するものであっ
て、板面に凸部が隆起して一体に成形されたものであ
り、 凸部は、電気回路基板を支持するものであって、金属放
熱板の板面から立上る側面が傾斜構造であることを特徴
とする半導体装置。1. A semiconductor device requiring high heat dissipation, comprising an electric circuit board and a metal heat sink, wherein the electric circuit board has a semiconductor element mounted thereon, and the metal heat sink is an electric circuit board. It is a device that dissipates heat of a circuit board, and is formed integrally with a protruding portion raised on a plate surface. A semiconductor device, wherein a side surface rising from a surface has an inclined structure.
熱を放熱する金属放熱板を引抜き加工する半導体装置の
製造方法であって、 金属放熱板は、平板部と、回路基板を支持する凸部とを
有し、 金属放熱板の素材を穴ダイスに押込み、該素材の断面形
状を、平板部と該平板部から一体に隆起した凸部からな
る金属放熱板の形状に引抜き、かつ凸部の対向する側面
に角度を付けて引抜くことを特徴とする半導体装置の製
造方法。2. A method of manufacturing a semiconductor device, comprising: drawing a metal radiator plate for radiating heat of an electric circuit board on which a semiconductor element is mounted, wherein the metal radiator plate includes a flat plate portion and a convex supporting the circuit board. The material of the metal radiator plate is pushed into the hole die, and the cross-sectional shape of the material is pulled out into the shape of a metal radiator plate comprising a flat plate portion and a convex portion integrally raised from the flat plate portion, and the convex portion is formed. A method of manufacturing a semiconductor device, wherein an opposite side surface is drawn at an angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19101596A JP2845203B2 (en) | 1996-07-19 | 1996-07-19 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19101596A JP2845203B2 (en) | 1996-07-19 | 1996-07-19 | Semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1041441A true JPH1041441A (en) | 1998-02-13 |
| JP2845203B2 JP2845203B2 (en) | 1999-01-13 |
Family
ID=16267469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19101596A Expired - Fee Related JP2845203B2 (en) | 1996-07-19 | 1996-07-19 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2845203B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100572716B1 (en) | 2004-09-24 | 2006-04-24 | 주식회사 리더시스템 | Drawing method for Al guide of hand held phone sliding |
| JPWO2008078788A1 (en) * | 2006-12-26 | 2010-04-30 | 京セラ株式会社 | Heat dissipation board and electronic device using the same |
| EP2840603A1 (en) * | 2012-04-20 | 2015-02-25 | Daikin Industries, Ltd. | Refrigeration device |
-
1996
- 1996-07-19 JP JP19101596A patent/JP2845203B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100572716B1 (en) | 2004-09-24 | 2006-04-24 | 주식회사 리더시스템 | Drawing method for Al guide of hand held phone sliding |
| JPWO2008078788A1 (en) * | 2006-12-26 | 2010-04-30 | 京セラ株式会社 | Heat dissipation board and electronic device using the same |
| JP5202333B2 (en) * | 2006-12-26 | 2013-06-05 | 京セラ株式会社 | Heat dissipation board and electronic device using the same |
| EP2840603A1 (en) * | 2012-04-20 | 2015-02-25 | Daikin Industries, Ltd. | Refrigeration device |
| EP2840603A4 (en) * | 2012-04-20 | 2015-04-22 | Daikin Ind Ltd | Refrigeration device |
| US9377237B2 (en) | 2012-04-20 | 2016-06-28 | Daikin Industries, Ltd. | Refrigeration apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2845203B2 (en) | 1999-01-13 |
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