JPS6168387A - 化合物半導体単結晶の製造装置 - Google Patents
化合物半導体単結晶の製造装置Info
- Publication number
- JPS6168387A JPS6168387A JP19018984A JP19018984A JPS6168387A JP S6168387 A JPS6168387 A JP S6168387A JP 19018984 A JP19018984 A JP 19018984A JP 19018984 A JP19018984 A JP 19018984A JP S6168387 A JPS6168387 A JP S6168387A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- compound semiconductor
- sintered body
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19018984A JPS6168387A (ja) | 1984-09-11 | 1984-09-11 | 化合物半導体単結晶の製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19018984A JPS6168387A (ja) | 1984-09-11 | 1984-09-11 | 化合物半導体単結晶の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6168387A true JPS6168387A (ja) | 1986-04-08 |
| JPH0214319B2 JPH0214319B2 (enExample) | 1990-04-06 |
Family
ID=16253931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19018984A Granted JPS6168387A (ja) | 1984-09-11 | 1984-09-11 | 化合物半導体単結晶の製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6168387A (enExample) |
-
1984
- 1984-09-11 JP JP19018984A patent/JPS6168387A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0214319B2 (enExample) | 1990-04-06 |
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