JPS616196A - 液相エピタキシヤル成長方法 - Google Patents
液相エピタキシヤル成長方法Info
- Publication number
- JPS616196A JPS616196A JP12793784A JP12793784A JPS616196A JP S616196 A JPS616196 A JP S616196A JP 12793784 A JP12793784 A JP 12793784A JP 12793784 A JP12793784 A JP 12793784A JP S616196 A JPS616196 A JP S616196A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- growth
- small holes
- epitaxial growth
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000007791 liquid phase Substances 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000155 melt Substances 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 abstract description 18
- 239000002699 waste material Substances 0.000 abstract description 4
- 230000005484 gravity Effects 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 244000082204 Phyllostachys viridis Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 241000287531 Psittacidae Species 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12793784A JPS616196A (ja) | 1984-06-21 | 1984-06-21 | 液相エピタキシヤル成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12793784A JPS616196A (ja) | 1984-06-21 | 1984-06-21 | 液相エピタキシヤル成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS616196A true JPS616196A (ja) | 1986-01-11 |
JPH0557236B2 JPH0557236B2 (enrdf_load_stackoverflow) | 1993-08-23 |
Family
ID=14972320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12793784A Granted JPS616196A (ja) | 1984-06-21 | 1984-06-21 | 液相エピタキシヤル成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS616196A (enrdf_load_stackoverflow) |
-
1984
- 1984-06-21 JP JP12793784A patent/JPS616196A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0557236B2 (enrdf_load_stackoverflow) | 1993-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5164798A (en) | Diffusion control of P-N junction location in multilayer heterostructure light emitting devices | |
DE112006001847T5 (de) | Ausrichtung von Laserdioden auf fehlgeschnittenen Substraten | |
JPH06105797B2 (ja) | 半導体基板及びその製造方法 | |
US5359209A (en) | Efficient light emitting diodes with modified window layers | |
DE1802618A1 (de) | Lichtemittierende Diode und Verfahren zu ihrer Herstellung | |
JPS6321358B2 (enrdf_load_stackoverflow) | ||
JPS616196A (ja) | 液相エピタキシヤル成長方法 | |
JPH02146779A (ja) | ダブルヘテロ型エピタキシャル・ウエハ | |
DE10036672B4 (de) | GaAs-Flüssigphasenepitaxiewafer und Verfahren zum Herstellen desselben | |
US6890781B2 (en) | Transparent layer of a LED device and the method for growing the same | |
DE19627838A1 (de) | Epitaxialwafer und lichtemittierende Halbleitervorrichtung | |
JP4747319B2 (ja) | ヘテロエピタキシャル成長方法 | |
JPS5923578A (ja) | 発光半導体装置 | |
JPS6184888A (ja) | 埋込みヘテロ型半導体レ−ザ | |
KR890004478B1 (ko) | 바라스형 반도체 발광소자 | |
JPS6321282A (ja) | 混晶半導体の液相エピタキシヤル積層法 | |
US5585305A (en) | Method for fabricating a semiconductor device | |
KR940011106B1 (ko) | 반도체 레이저 다이오드의 제조방법 | |
JPS59195881A (ja) | 半導体装置の製造方法 | |
JPS5810819A (ja) | 液相エピタキシヤル成長方法 | |
JPS61198718A (ja) | 液相エピタキシヤル成長方法 | |
JP2000312029A (ja) | 半導体発光素子およびその製法 | |
WO2007063085A1 (de) | Verfahren zum herstellen eines halbleiterbauelementes | |
JPH0496320A (ja) | 薄膜半導体結晶成長法 | |
JPH06314818A (ja) | GaAlAs半導体発光素子の製造方法 |