JPS6161527B2 - - Google Patents
Info
- Publication number
- JPS6161527B2 JPS6161527B2 JP14863180A JP14863180A JPS6161527B2 JP S6161527 B2 JPS6161527 B2 JP S6161527B2 JP 14863180 A JP14863180 A JP 14863180A JP 14863180 A JP14863180 A JP 14863180A JP S6161527 B2 JPS6161527 B2 JP S6161527B2
- Authority
- JP
- Japan
- Prior art keywords
- inductive load
- voltage
- transistor
- diode
- load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001939 inductive effect Effects 0.000 claims description 15
- 238000009877 rendering Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000001052 transient effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/08—Electromagnets; Actuators including electromagnets with armatures
- H01F7/18—Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14863180A JPS5771109A (en) | 1980-10-22 | 1980-10-22 | Attenuation circuit for flyback voltage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14863180A JPS5771109A (en) | 1980-10-22 | 1980-10-22 | Attenuation circuit for flyback voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5771109A JPS5771109A (en) | 1982-05-01 |
JPS6161527B2 true JPS6161527B2 (de) | 1986-12-26 |
Family
ID=15457102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14863180A Granted JPS5771109A (en) | 1980-10-22 | 1980-10-22 | Attenuation circuit for flyback voltage |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5771109A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4329981A1 (de) * | 1993-09-04 | 1995-03-09 | Bosch Gmbh Robert | Verfahren und Vorrichtung zur Ansteuerung eines elektromagnetischen Verbrauchers |
JP2003047287A (ja) * | 2001-07-26 | 2003-02-14 | Auto Network Gijutsu Kenkyusho:Kk | 保護回路 |
JP2015065377A (ja) * | 2013-09-26 | 2015-04-09 | カヤバ工業株式会社 | 電気回路 |
-
1980
- 1980-10-22 JP JP14863180A patent/JPS5771109A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5771109A (en) | 1982-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6275093B1 (en) | IGBT gate drive circuit with short circuit protection | |
KR19980032986A (ko) | MOS-게이트된 전력 트랜지스터의 스위칭 di/dt 및 dv/dt 제어 방법 | |
US4545004A (en) | Bridge driver circuit for a DC electric motor | |
JPH04211511A (ja) | 有効クランプ回路を備えた制御回路 | |
US4547686A (en) | Hybrid power semiconductor switch | |
JPH0213115A (ja) | 電力用電界効果トランジスタ駆動回路 | |
JPH0642179B2 (ja) | 短絡保護機能を改良した電力トランジスタ駆動回路 | |
US4275430A (en) | DV/DT Protection circuit device for gate turn-off thyristor | |
US4342956A (en) | Proportional base drive circuit | |
JP3414859B2 (ja) | 半導体デバイスの過電流時のターンオフ回路装置 | |
US4392172A (en) | Reactive snubber for inductive load clamp diodes | |
US3820008A (en) | Driving circuit for switching transistor | |
US4599674A (en) | Circuit for driving solenoid | |
JP2793946B2 (ja) | 電力用スイッチング装置 | |
EP0921624B1 (de) | Steuervorrichtung für selbstlöschendes leistungselement | |
US3763383A (en) | Drive circuit for inductive device | |
US4349752A (en) | Magnetic couple drive circuit for power switching device | |
USRE32526E (en) | Gated solid state FET relay | |
US4916378A (en) | Inductive load discharge current recirculation circuit with selectable "fast" and "low" modes | |
JPS6161527B2 (de) | ||
JP3456836B2 (ja) | ゲート駆動回路 | |
US5103148A (en) | Low voltage circuit to control high voltage transistor | |
US4447741A (en) | Base drive circuit for power transistors | |
EP0898811B1 (de) | Ansteuerschaltung für einen bipolartransistor mit isoliertem gate | |
EP0059326B1 (de) | Steuerschaltung eines Schrittmotors zur synchronischen Umschaltung der Kernwicklung |