JPS6161479A - Manufacture of light emitting element - Google Patents
Manufacture of light emitting elementInfo
- Publication number
- JPS6161479A JPS6161479A JP59183481A JP18348184A JPS6161479A JP S6161479 A JPS6161479 A JP S6161479A JP 59183481 A JP59183481 A JP 59183481A JP 18348184 A JP18348184 A JP 18348184A JP S6161479 A JPS6161479 A JP S6161479A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- light emitting
- film
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000007423 decrease Effects 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は発光部の輝度が均一となる発光素子の製造方
法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing a light emitting element in which the luminance of a light emitting part is uniform.
（従来の技術）
従来から、電極が発光部の領域内に部分的に白花した構
造のブレーナ型発光素子が提案されている。この発光素
子は適邑な拡散保護膜を用いて不純物を選択拡散してｐ
ｎ接合を形成し発光部を形成している。この拡散により
得られるｐｎ接合の断面形状は通常矩形となっており、
発光は注入された拡散電流によって生ずるように構成さ
れている。(Prior Art) A Brehner-type light-emitting element in which an electrode is partially white-colored within a region of a light-emitting portion has been proposed. This light-emitting element uses an appropriate diffusion protection film to selectively diffuse impurities.
An n-junction is formed to form a light emitting part. The cross-sectional shape of the pn junction obtained by this diffusion is usually rectangular.
The light emission is arranged to be caused by an injected diffusion current.
（発明が解決しようとする問題点）
しかしながら、電極が局在する構造の発光素子において
は、電極の近傍では電流密度が大きいが電極から離れる
にしたがって電流密度が小さくなるので、電極の近傍で
発光輝度が高く電極から離れるにつれて輝度が低下する
という欠点があった。(Problem to be solved by the invention) However, in a light emitting element with a structure in which electrodes are localized, the current density is large near the electrode, but the current density decreases as the distance from the electrode increases. The drawback was that the brightness was high and the brightness decreased as the distance from the electrode increased.
この欠点を解決するため、多くの実験を行ったところ、
この出願の発明者は発光部の領域の低輝度となる部分に
おける拡散層のうち光吸収作用を有する高濃度不純物層
を無くしてやるか極薄くすればその部分の輝度を高める
ことが出来ることを発見した。In order to solve this shortcoming, we conducted many experiments and found that
The inventor of this application discovered that if the high-concentration impurity layer that has a light-absorbing effect in the diffusion layer in the low-luminance part of the light-emitting region is eliminated or made extremely thin, the luminance of that part can be increased. did.
従って、この発明の目的は電極が局在する構造の発光素
子であっても、輝度を均一とすることが出来る発光素子
の製造方法を提供することにある。Therefore, an object of the present invention is to provide a method for manufacturing a light emitting element that can provide uniform brightness even in a light emitting element having a structure in which electrodes are localized.
（問題点を解決するための手段）
この発明の目的の達成を図るため、この発明の方法によ
れば、半導体基板に拡散保護膜を用いて不純物を熱拡散
することにより発光部の拡散層を形成して発光素子を製
造するに当り、前記拡散保護膜を、前記発光部の領域内
においては、拡散深さの２倍未満の幅を有する島状拡散
保護膜として形成し、該島状拡散保護膜を用いて前記熱
拡散を行うことを特徴とする。(Means for Solving the Problems) In order to achieve the object of the present invention, according to the method of the present invention, a diffusion layer of a light emitting part is formed by thermally diffusing impurities using a diffusion protection film on a semiconductor substrate. When manufacturing a light emitting element by forming the diffusion protective film, the diffusion protective film is formed as an island-like diffusion protective film having a width less than twice the diffusion depth in the region of the light emitting part, The method is characterized in that the heat diffusion is performed using a protective film.
（作用）
このように構成すれば、発光部の領域内における低輝度
となる恐れのある部分の基板に島状拡散保護膜を設け、
不純物の熱拡散を所定の拡散深さまで行えば、島状拡散
保護膜の下側の基板部分では横方向の拡散が行われ、そ
の場合、島状拡散保護膜の幅を拡散深さの２倍未満に設
定しであるので、その基板部分の拡散層のうち光吸収作
用のある高濃度不純物層が実質的に形成されず低濃度不
純物層が形成されるにすぎず、これがため、この部分で
の光の吸収が極めて少なくなって輝度が上り、よって、
発光郡全体の輝度を均一に出来る。(Function) With this configuration, an island-like diffusion protective film is provided on the substrate in the area of the light emitting part where there is a possibility of low brightness.
If thermal diffusion of impurities is performed to a predetermined diffusion depth, lateral diffusion will occur in the substrate portion below the island-shaped diffusion protection film, and in this case, the width of the island-shaped diffusion protection film is twice the diffusion depth. Since it is set to less than Absorption of light is extremely reduced and brightness increases, thus,
The brightness of the entire luminescent group can be made uniform.
（実施例）
以下、第１図（Ａ）〜（Ｄ）、第２図及び第３図を参照
して、この発明の詳細な説明する。尚、これら図におい
て、同一の構成成分については同一の符合を付して示す
と共に、断面を表わす／＼ラッチングを一部分省略して
示す、また、この実施例。(Example) Hereinafter, the present invention will be described in detail with reference to FIGS. 1(A) to (D), FIGS. 2 and 3. In these figures, the same constituent components are indicated by the same reference numerals, and the cross-sections are shown with some of the latching portions omitted.
をＧａＡｓ系半導体素子の製造方法を例に取って説明す
るが、これに限定されるものではなく、この発明はＩｎ
Ｐ系その他の材料を用いて形成される発光素子に適用出
来ること明らかである。will be explained by taking as an example a method for manufacturing a GaAs-based semiconductor device, but the present invention is not limited to this.
It is clear that the present invention can be applied to light emitting elements formed using P-based materials and other materials.
第１図（Ａ）〜（Ｄ）はこの発明の製造方法を説明する
ための製造工程図で、各図は主要製造段階でのウェハの
状態を断面図で路線的に示し、第２図は発光部を主とし
て路線的に示す平面図であり、第３図は拡散層の様子を
路線的に示す部分的断面図である。1(A) to 1(D) are manufacturing process diagrams for explaining the manufacturing method of the present invention. Each figure shows the state of the wafer at the main manufacturing stage in a cross-sectional view, and FIG. FIG. 3 is a plan view mainly showing the light emitting part in a linear manner, and FIG. 3 is a partial cross-sectional view showing the state of the diffusion layer in a linear manner.
先ず、第１図（Ａ）に示すように、半導体基板１として
ＧａＡｓ暦１ａとＧａＡｓＰ層１ｂとからなるｎ型のＣ
ａＡｓＰ／ＧａＡｓ基板を用い、この基板１のＧａＡｓ
Ｐ層ｌｂ上に、適当な方法例えばプラズマＣｖＤ法によ
って、窒化珪素膜２を被着する。尚、この窒化珪素膜２
の成膜に当り、基板１のＧａＡｓＰ 層１ｂの表面の残
留歪層を除去するため、トリクロルエチレン、メタノー
ルアルコールその他の適当な洗沙液を用いて表面の有機
洗浄を行った後、ＨｚＳＯａ ： Ｈ，０： Ｈ２０□
＝４：１：１のエツチング液を用いて室温で数分間エツ
チングするのが好適である。First, as shown in FIG. 1(A), an n-type C layer consisting of a GaAs layer 1a and a GaAsP layer 1b is used as a semiconductor substrate 1.
Using an aAsP/GaAs substrate, the GaAs of this substrate 1 is
A silicon nitride film 2 is deposited on the P layer lb by a suitable method, such as plasma CVD. Note that this silicon nitride film 2
During film formation, in order to remove the residual strain layer on the surface of the GaAsP layer 1b of the substrate 1, the surface was organically cleaned using trichlorethylene, methanol alcohol, or other suitable cleaning solution, and then HzSOa:H ,0: H20□
Etching is preferably carried out at room temperature for several minutes using an etching solution of 4:1:1.
続いて、第１図（Ａ）に示すように、この窒化珪素膜２
の全面上にホトレジスト３を形成した後、通常の方法で
、窒化珪素膜？に選択拡散用の後述する拡散窓５を形成
するための穴４を形成する。Subsequently, as shown in FIG. 1(A), this silicon nitride film 2 is
After forming a photoresist 3 on the entire surface of the silicon nitride film 3, a silicon nitride film 3 is formed using the usual method. A hole 4 for forming a later-described diffusion window 5 for selective diffusion is formed in the hole 4 .
次に、第１図ＣＢ）に示すように、パターニングされた
ホトレジスト３をエツチングマスクとして用いて、下側
の窒化珪素膜２に対し、ＣＦ４ガスとかその他の反応性
ガスでドライエツチングを行って、この１漠２に前述し
た拡散窓５を開け、然る後通常の方法で、残留している
ホトレジスト３を除土ナス
窒化珪素膜２は拡散保護膜として供するが、この拡散保
護＋１ｆｉ２は発光部６とすべき領域外の基板面上と、
発光部の領域内の輝度が低下する恐れがある部分すなわ
ち輝度を高める必要のある部分の基板面上とに残存する
ように形成する。従って、発光部の領域内ではこの拡散
保護膜２は島状の拡散保護膜２ａとなる（第２図参照）
、また、この島状拡散保護膜ハの幅Ｗを後述する拡散層
７の所定の拡散深さｄの２倍未満となるように、前述し
た穴４すなわち拡散窓５を形成する。Next, as shown in FIG. 1CB), using the patterned photoresist 3 as an etching mask, dry etching is performed on the lower silicon nitride film 2 with CF4 gas or other reactive gas. The above-mentioned diffusion window 5 is opened in this step 2, and then the remaining photoresist 3 is removed using a normal method.The silicon nitride film 2 serves as a diffusion protection film, but this diffusion protection +1fi2 On the board surface outside the area that should be 6,
It is formed so as to remain on the substrate surface in a portion where the brightness in the region of the light emitting portion is likely to decrease, that is, a portion where brightness needs to be increased. Therefore, within the region of the light emitting part, this diffusion protection film 2 becomes an island-shaped diffusion protection film 2a (see Fig. 2).
Further, the hole 4, that is, the diffusion window 5, is formed so that the width W of the island-shaped diffusion protective film C is less than twice the predetermined diffusion depth d of the diffusion layer 7, which will be described later.
次に、この拡散窓５が形成された島状拡散保護膜２ａを
含む拡散保護膜２を用いて、例えば封管熱拡散法により
、この拡散窓５を介して例えば亜鉛又はその他の適切な
ｐ型不純物を、その拡散深さが所定の深さく通常は例え
ば約３４ｍ〜５ ｐ−ｒｎ ）となるように主として温
度及び時間とを制御しながら、拡散して、第１図（Ｃ）
に示すような、基板１の一部分にｐ型拡散暦７を形成す
る。この拡散層７により基板ｌとの間でｐｎ！ｆｉ合が
形成される。Next, using the diffusion protection film 2 including the island-shaped diffusion protection film 2a on which the diffusion window 5 is formed, for example, zinc or other suitable p-oxide is added through the diffusion window 5 by, for example, a sealed tube thermal diffusion method. The type impurity is diffused mainly by controlling the temperature and time so that the diffusion depth becomes a predetermined depth (usually about 34 m to 5 p-rn), as shown in FIG. 1(C).
A p-type diffusion layer 7 is formed in a portion of the substrate 1 as shown in FIG. Due to this diffusion layer 7, pn! A fi union is formed.
第３図はこの拡散層７従ってｐｎ接合の形成状態を示す
、この図にも示したように、この不純物の熱拡散により
形成される拡散層７は拡散の最前部付近の低濃度不純物
層８（不純物濃度は約ｔ ｏ７７ｃＩ！１−３）とその
内側の高濃度不純物層９（不純物ツタ
濃度は約１０ ｃ＋１−３）とからなっていて、この高
濃度不純物層９が光吸収作用を有した吸収層を形成する
。この場合、前述したように、島状拡散保護ｌ１９２ａ
の幅Ｗを拡散深さｄの２倍未満となるように設定しであ
るので、島状拡散保護膜２ａの下側の基板部分に横方向
に拡散して得られる拡１１１５７は主として低濃度不純
物層８であり、高濃度不純物層９は形成されないか或い
は形成されても極めて薄くほとんど光吸収に寄与しない
、従って、ｐｎ接合の深さも島状拡散保護ＩＩ！２ａに
下側の基板内では浅くなっている。FIG. 3 shows the state of formation of this diffusion layer 7 and hence the pn junction. As shown in this figure, the diffusion layer 7 formed by thermal diffusion of impurities is a low concentration impurity layer 8 near the forefront of diffusion. (The impurity concentration is about t077cI!1-3) and a high concentration impurity layer 9 (the impurity concentration is about 10c+1-3) inside it, and this high concentration impurity layer 9 has a light absorption effect. form an absorbent layer. In this case, as mentioned above, the island-like diffusion protection l192a
Since the width W of is set to be less than twice the diffusion depth d, the expansion 11157 obtained by horizontally diffusing into the substrate portion below the island-shaped diffusion protection film 2a is mainly caused by low concentration impurities. 8, and the high concentration impurity layer 9 is not formed, or even if it is formed, it is extremely thin and hardly contributes to light absorption.Therefore, the depth of the pn junction is also island-shaped diffusion protection II! 2a, it is shallower in the lower substrate.
続いて、拡散層７が形成された基板ｌの面及び拡散保Ａ
Ｈ！Ｊ２上に、適当な方法例えばＣＶＤ法で、絶縁膜１
０を成長させ、続いて、ｐ型電極を形成するための溝１
１を通常の方法で開けて、第１図（Ｃ）に示すようなウ
ェハ構造を得る。Subsequently, the surface of the substrate l on which the diffusion layer 7 is formed and the diffusion layer A are
H! An insulating film 1 is formed on J2 by an appropriate method such as CVD.
0, followed by trench 1 for forming the p-type electrode.
1 is opened in a conventional manner to obtain a wafer structure as shown in FIG. 1(C).
次に、一方の電極であるｐ側電極１２として例えばＮを
蒸着し、他方の電極であるｎ側電極１３としてＡｕ−Ｇ
ｅ−旧を基板１の下面に蒸着し、これらを合金化して第
１図（Ｄ）に示すような構造の発光素子を完成する。Next, for example, N is vapor-deposited as the p-side electrode 12 that is one electrode, and Au-G is used as the n-side electrode 13 that is the other electrode.
E-O is deposited on the lower surface of the substrate 1, and these are alloyed to complete a light emitting device having a structure as shown in FIG. 1(D).
上述した島状拡散保護膜２ａの形状及び形成する基板上
の位置は形成すべき電極の形状及び位置に対応して任意
に設定することが出来る。The shape of the above-mentioned island-shaped diffusion protection film 2a and the position on the substrate where it is formed can be arbitrarily set depending on the shape and position of the electrode to be formed.
また、上述した実施例ではｎ型基板を用いたがｐ型基板
を用いて形成し、その上側に設ける各構成成分の導電型
を反転しても同一の効果を達成することが出来る。Further, although an n-type substrate was used in the above-described embodiment, the same effect can be achieved even if a p-type substrate is used and the conductivity type of each component provided above the substrate is reversed.
（発明の効果）
上述した説明からも明らかなように、この発明によれば
、発光部の領域内の低輝度となる恐れのある部分の基板
面上に所定の拡散深さの２倍未満の幅をもった島状拡散
保護膜を形成して、これをマスクとして用いてｐｎ接合
を形成するための不純物の熱拡散をこの所定の拡散深さ
まで行って拡散層を形成するので、島状拡散保護膜の下
側の基板部分での拡散層は実質的に低濃度不純物層とな
り、その部分での光の吸収による損失がなくなり、輝度
が高くなる。これがため、電極が偏って存在する発光素
子の場合であっても、電極から離れているために電流密
度が小さくても、その部分での輝度の低下を軽減するこ
とが出来る。(Effects of the Invention) As is clear from the above description, according to the present invention, a diffusion layer with a depth less than twice the predetermined diffusion depth is formed on the substrate surface in a portion of the light emitting section that is likely to have low brightness. An island-shaped diffusion protection film with a width is formed, and this is used as a mask to perform thermal diffusion of impurities to form a pn junction to a predetermined diffusion depth to form a diffusion layer. The diffusion layer in the substrate portion below the protective film essentially becomes a low-concentration impurity layer, eliminating loss due to light absorption in that portion and increasing brightness. Therefore, even in the case of a light-emitting element in which the electrodes are unevenly located, even if the current density is small due to the distance from the electrodes, it is possible to reduce the reduction in brightness at that part.
【図面の簡単な説明】
第１図（Ａ）〜（Ｄ）はこの発明の製造方法を説明する
ための製造工程図、
第２図は発光部の領域に形成する拡散窓を主として路線
的に示す平面図、
第３図は拡散層の様子を路線的に示す部分的断面図であ
る。
ｌ・・・半導体基板（ＧａＡｓＰ／ＧａＡｓ基板）１ａ
・・・ＧａＡｓｆｉ、 ｌｂ−・ＧａＡｓＰ
Ｒ２・・・窒化珪素ｌり（拡散保護膜）
２ａ・・・島状拡散保護膜
３・・・ホトレジスト
４・・・（ホトレジストの）穴
５・・・拡散窓、 ６・・・発光部７・・・
拡散層、 ８・・・低濃度不純物層９・・・高
濃度不純物層、 ｌＯ・・・絶縁膜１１・・・溝、
１２・・・ｐ側電極１３・・・ｎ側電極。[BRIEF DESCRIPTION OF THE DRAWINGS] Figures 1 (A) to (D) are manufacturing process diagrams for explaining the manufacturing method of the present invention. Figure 2 shows the diffusion window formed in the region of the light emitting part mainly in line. FIG. 3 is a partial cross-sectional view showing the state of the diffusion layer along lines. l...Semiconductor substrate (GaAsP/GaAs substrate) 1a
...GaAsfi, lb-・GaAsP
R2...Silicon nitride (diffusion protection film) 2a...Island-shaped diffusion protection film 3...Photoresist 4...(Photoresist) hole 5...Diffusion window 6...Light emitting part 7 ...
Diffusion layer, 8...Low concentration impurity layer 9...High concentration impurity layer, lO...Insulating film 11...Trench,
12...p-side electrode 13...n-side electrode.
Claims (1)
ことにより発光部の拡散層を形成して発光素子を製造す
るに当り、前記拡散保護膜を、前記発光部の領域内にお
いては、拡散深さの２倍未満の幅を有する島状拡散保護
膜として形成し、該島状拡散保護膜を用いて前記熱拡散
を行うことを特徴とする発光素子の製造方法。When manufacturing a light emitting device by forming a diffusion layer of a light emitting part by thermally diffusing impurities using a diffusion protection film on a semiconductor substrate, the diffusion protection film is applied to a diffusion layer with a diffusion depth within the region of the light emission part. A method for manufacturing a light emitting device, characterized in that the thermal diffusion is performed using the island-shaped diffusion protection film, which is formed as an island-shaped diffusion protection film having a width less than twice the width of the light-emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18348184A JPH077846B2 (en) | 1984-09-01 | 1984-09-01 | Method of manufacturing light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18348184A JPH077846B2 (en) | 1984-09-01 | 1984-09-01 | Method of manufacturing light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6161479A true JPS6161479A (en) | 1986-03-29 |
| JPH077846B2 JPH077846B2 (en) | 1995-01-30 |
Family
ID=16136562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18348184A Expired - Fee Related JPH077846B2 (en) | 1984-09-01 | 1984-09-01 | Method of manufacturing light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH077846B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02178980A (en) * | 1988-12-28 | 1990-07-11 | Kyocera Corp | Light emitting diode |
| US4956684A (en) * | 1987-09-24 | 1990-09-11 | Fuji Xerox Co., Ltd. | Printer head with light emitting element array |
| US5297097A (en) * | 1988-06-17 | 1994-03-22 | Hitachi Ltd. | Large scale integrated circuit for low voltage operation |
| USRE40132E1 (en) | 1988-06-17 | 2008-03-04 | Elpida Memory, Inc. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5114239A (en) * | 1974-06-25 | 1976-02-04 | Ibm | |
| JPS6070782A (en) * | 1983-09-27 | 1985-04-22 | Sanyo Electric Co Ltd | Manufacture of light-emitting diode |
-
1984
- 1984-09-01 JP JP18348184A patent/JPH077846B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5114239A (en) * | 1974-06-25 | 1976-02-04 | Ibm | |
| JPS6070782A (en) * | 1983-09-27 | 1985-04-22 | Sanyo Electric Co Ltd | Manufacture of light-emitting diode |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4956684A (en) * | 1987-09-24 | 1990-09-11 | Fuji Xerox Co., Ltd. | Printer head with light emitting element array |
| US5297097A (en) * | 1988-06-17 | 1994-03-22 | Hitachi Ltd. | Large scale integrated circuit for low voltage operation |
| USRE37593E1 (en) * | 1988-06-17 | 2002-03-19 | Hitachi, Ltd. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
| USRE40132E1 (en) | 1988-06-17 | 2008-03-04 | Elpida Memory, Inc. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
| JPH02178980A (en) * | 1988-12-28 | 1990-07-11 | Kyocera Corp | Light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH077846B2 (en) | 1995-01-30 |
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