JPS6159786A - Production of chip hall element - Google Patents

Abstract

PURPOSE:To obtain an overlapped portion between an electrode film and a magnetic sensitive element film and to form the electrode film over the side face of a dividing groove, by changing the incidence angle of vapor deposition made between the surface of master plate and the upstream direction of metallic vapor flow in the process of vapor deposition for forming the electrode film. CONSTITUTION:Grooves 8 are half cut in a master plate 5 so as to divide it into a plurality of substrates in lattice form. A magnetic sensitive element film of InSb is formed on the main surface of the master plate 5, and then a first electrode 3a is vapor deposited thereon. A second electrode film 3b is then vapor deposited so as to cover from the surface of the substrate 1 to the side face of the groove 8. A first protective film of Al2O3 is provided for protecting the joining area between the magnetic sensitive element film and the electrode films, and the magnetic sensitive element film. A second protective film of resin is deposited on the first protective film. Thus, provided is a two- layer protective film 4 consisting of the lower alumina layer and of the upper resin layer covering the joining area between the magnetic sensitive element film and the electrode films and the magnetic sensitive element film. After that, the substrate is scribed and solder is dipped on the electrode films.

Description

[Detailed description of the invention] 11 circles 1 The present invention relates to a method for manufacturing a chip Hall element.

1 and ■ - The chip Hall element is a smaller and smaller version of the conventional Hall element.
It was developed to increase sensitivity.

Such a chip Hall element is disclosed in Japanese Patent Application No. 59-100.
132M, on the 1st day of the 1st century, the method of its manufacture is shown in Un. This chip Hall element is shown in Fig. 1 (a) and (b).
As shown in its plane and cross section, a magnetically sensitive element film 2, an electrode 113, and a protective film 4 are laminated on a substrate 1 by vacuum evaporation. In the steps of the manufacturing method for such a chip hole element, an original plate 5 with grooves dividing the substrate 1 is prepared, and each substrate 1 is masked and magnetically sensitive as shown in FIG. 2-(a). An element film 2 is deposited, masked thereon as shown in FIG. 2(b), and an electrode F13 is deposited and laminated from the main surface to the side surfaces of the substrate 1, as shown in FIG. 2(C). A protective film 4 is masked and deposited so as to protect the connecting portion (overlapping portion) between the magnetically sensitive element film 2 and the electrode film 3 and the magnetically sensitive element film 2.

Thereafter, the original plate is cut for each substrate to obtain element chips that serve as chip holes.

In the manufacturing method of the above-mentioned prior example, as shown in FIG.
! The electrode film is formed by evaporating the entire substrate including the overlapping portion with 3 at an evaporation incident angle θ in the range of 40 degrees to 70 degrees. Note that the angle θ formed between the main surface of the original plate and the upstream direction of the metal vapor flow is referred to as the evaporation incident angle.

However, as shown in FIG. 3(a), the metal mask 6 for vapor deposition
Even when the magneto-sensitive element film 2 and the main surface of the substrate 1 are in close contact with each other, the size of the corresponding portion of the electrode film 3 and the magneto-sensitive element film 2 is smaller than the evaporation incidence angle due to the inclination of the evaporation incidence angle. differs in the direction of inclination.

Furthermore, if there is a gap 7 in the metal mask 6 for vapor deposition as shown in FIG.
The electrode film 3 is formed apart from the magnetically sensitive element film 12, and in extreme cases, the electrode film 3 may be formed astride the adjacent magnetically sensitive element film 2. Therefore, due to the manufacturing method of the preceding example,
This resulted in a high number of defective products, resulting in low product yields.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing a chip Hall element with a high manufacturing yield.

The method for manufacturing a chip Hall element of the present invention includes a step of forming grooves on an original plate to define a plurality of substrates, a vapor deposition step of forming a magnetically sensitive element film on each main surface of the substrates, and a step of forming a magnetically sensitive element film on each main surface of the substrates. a vapor deposition process for forming two pairs of electrode films formed on the magnetically sensitive element film and connected to the magnetically sensitive element film, and a process for forming a protective film that covers the magnetically sensitive element film and the connecting portion between the electrode and the magnetically sensitive element film. The method is characterized in that the vapor deposition incident angle formed between the main surface of the original plate and the upstream direction of the metal vapor flow is changed in the vapor deposition process for forming the electrode film.

E-LJL Embodiments of the present invention will be described below with reference to the drawings.

FIG. 4 is a flowchart of an embodiment of the method for manufacturing a chip Hall element of the present invention.

First, in the partition grooved original plate preparation step S1, a plurality of lattice-shaped substrates 1 are placed on an original plate 5 made of, for example, ceramic.
Half-cut the groove 8 that divides the
After cleaning and depositing a base, a double-grooved base plate is prepared.

Next, in the magnetosensitive element film forming step S2, the main surface of the obtained original plate is masked with a metal mask, and the I
A magnetically sensitive wire film is formed by depositing nSb.

In the next first electrode film forming step S3, as shown in FIG.
As shown in the schematic cross-sectional view, the main surface of the original plate 5, which has been masked with respect to the direction of the metal vapor flow in the vapor deposition apparatus, is placed upstream of the metal vapor flow while keeping the incident angle θ preferably at about 70 to 90 degrees. A first electrode film 3a is deposited on the substrate 1 on which the magnetically sensitive element film 2 has been formed in advance. As shown in the plan view of FIG. 6(a), the first electric 1! The i film 3a is formed on the main surface of the substrate 1 so as to partially overlap with the magnetically sensitive element film 2. In this case, even if there is a gap as shown in FIG. 5(b), the first electric FAF! 3atfi will not be formed out of alignment with the magnetically sensitive element film 2 to be deposited. In this first electrode film forming step, Cr is first vapor deposited and CU is formed as a v4 layer thereon. Further, the thickness of the first electrode film is maintained to be at least 0.2 μm and is protected by a protective layer 1fJ formed later.

Next, in the second electrode film forming step S4, the position of the opening is changed using another metal mask, and the deposition incident angle θ is adjusted to 3.
After placing the original plate 5 against the Cu gold aH airflow so that the angle is within the range of about 0 to 60 degrees, the vapor deposition was started again at 61, as shown in FIGS. 6(b) and 7(a). The second electrode film 3b is deposited from the main surface of the substrate 1 to the side surface of the groove 8' as shown in FIG. Since the electrode film 3a is formed, a sufficient overlapping area can be obtained.The Ti electrode film 3a has a total thickness of 1.0 μm or more so that the solder adheres well to the electrode film 3. It is formed from the main surface to the side surface of the substrate.

Next, in the first protective film forming step S5, a first protective film 11u made of AQzOz is formed by passivation in order to protect the joint between the magnetically sensitive element film and the electrode film as well as the magnetically sensitive element film.

Next, in the second protective film forming step S6, a second protective LW film made of resin is laminated on the first protective film, and an alumina film is formed to cover the joint between the magnetically sensitive element film and the electrode film and the magnetically sensitive element film. A protective film 4 having a two-layer structure consisting of a lower layer of resin and an upper layer of resin is provided.

After that, a substrate scribing step S7 is performed.

Then, in the solder application step S8, a solder dip is formed on the crotch of the electrode in order to connect it directly to the printed wiring.

After that, the obtained original plate is cut along the dividing grooves in an inspection step S.
The chip Hall element of the present invention is obtained through step 9.

In the vapor deposition process for forming the electrode film in this way, the electrode film is @magnetic element I! The first electrode II electrically connected to 2! The first electrical ridge l forming 13a! An electrode film laminated over the side surface of the substrate is formed by a vapor deposition process and a second electrode film vaporization process for forming a second electrode WA3b electrically connected to the first electrode film. First electrode crotch deposition process and second electrode i*i
The main surface of the original plate in step a is inclined with respect to the upstream direction of the metal vapor flow, and the first T1 pole l! In the vapor deposition process, the vapor deposition incident angle between the main surface of the original plate and the upstream direction of the gold i vapor flow is the second
1! This is larger than the deposition incident angle in the electrode film deposition process.

As described above, according to this embodiment, even when the metal mask 6, the magnetically sensitive element film 2, and the main surface of the substrate 1 are in close contact with each other, even when there is a gap 7, the overlapping portion of the electrode film 3 and the magnetically sensitive element film 2 are formed with approximately the same area, and electrical connection between the electrodes 1 and 13 and the magnetically sensitive element film 2 can be reliably obtained.

Furthermore, in this embodiment, the first electrode film and the second electrode film are deposited in this order, but as shown in FIGS. 8(a) and (b), the second electrode film 3b is formed first, and then the second electrode film 3b is formed first. First N pole film 3 on top
It is clear that a may be formed by vapor deposition.

Effects As described above, according to the method for manufacturing a chip Hall element of the present invention, in the vapor deposition process for forming an electrode film, the incident angle of vapor deposition between the main surface of the original plate and the upstream direction of the metal vapor flow can be changed, for example. By changing the deposition incident angle from one angle selected from the range of 70 degrees to 90 degrees to another angle selected from the range of 30 degrees to 60 degrees, it is possible to ensure that the overlapped portion of the electrode film and the magnetically sensitive element film is Thus, an electrode film can be formed over the side surfaces of the partition grooves.

[Brief explanation of drawings]

FIG. 1(a) is a plan view of the chip Hall element of the prior example, and FIG. 1(b) is the I! of FIG. 1(a). FIG. 2(a), (b) and (C) are schematic plan views of the substrate in the vapor deposition process of the chip Hall element manufacturing method which is a prior example, and FIG. 3(a) is a sectional view of ) and (b) are the second
FIG. 4 is a flowchart showing the method for manufacturing a chip Hall element of the present invention; FIGS. Diagram (a>
FIG. 6(a) is a partial plan view of the original plate in the first electrode wA vapor deposition step;
FIG. 6(b) is a partial plan view of the original plate in the second electrode film deposition step, and FIG. 7(a) and (b) are the same as FIG. 6(b).
FIG. 8(a) is a partial plan view of the original plate in the second electrode film deposition process, and FIG. 8(b) is a partial plan view of the original plate in the first electrode film deposition process. FIG. Explanation of symbols of main parts 1... Substrate 2... Magnetically sensitive cable membrane 3... Electrode film 4
......Protective film 5...Original plate 6...
...Metal mask 7...Gap 8...Groove ((1
) Shima f times rb+ Yan, 3rd figure bird 4th figure 5th figure 6th l = concave 16° (α) ′ Qin 7th figure

Claims (3)

[Claims] (1) A step of forming grooves on an original plate to define a plurality of substrates; a vapor deposition step of forming a magnetically sensitive element film on each main surface of the substrate; The step includes a vapor deposition step of forming two pairs of electrode films connected to the magnetic element film, and a step of forming a protective film covering the magnetically sensitive element film and the connecting portion between the electrode and the magnetically sensitive element film, 1. A method for manufacturing a chip Hall element, characterized in that in a vapor deposition step for forming an electrode film, an incident angle of vapor deposition between the main surface of the original plate and the upstream direction of the metal vapor flow is changed. (2) The vapor deposition process for forming the electrode film includes a first electrode film vapor deposition process and a second electrode film vapor deposition process, and the vapor deposition incident angle in the first electrode film vapor deposition process and the vapor deposition incident angle in the second electrode film vapor deposition process. 2. The manufacturing method according to claim 1, wherein: (3) The vapor deposition incident angle in the first electrode film vapor deposition step is in the range of 70 degrees to 90 degrees, and the vapor deposition incident angle in the second electrode film vapor deposition step is in the range of 30 degrees to 60 degrees. A manufacturing method according to claim 2, characterized in that: