JPS6159671B2 - - Google Patents
Info
- Publication number
- JPS6159671B2 JPS6159671B2 JP54157783A JP15778379A JPS6159671B2 JP S6159671 B2 JPS6159671 B2 JP S6159671B2 JP 54157783 A JP54157783 A JP 54157783A JP 15778379 A JP15778379 A JP 15778379A JP S6159671 B2 JPS6159671 B2 JP S6159671B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- melting point
- point metal
- nitride film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15778379A JPS5680168A (en) | 1979-12-05 | 1979-12-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15778379A JPS5680168A (en) | 1979-12-05 | 1979-12-05 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5680168A JPS5680168A (en) | 1981-07-01 |
| JPS6159671B2 true JPS6159671B2 (enrdf_load_stackoverflow) | 1986-12-17 |
Family
ID=15657194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15778379A Granted JPS5680168A (en) | 1979-12-05 | 1979-12-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5680168A (enrdf_load_stackoverflow) |
-
1979
- 1979-12-05 JP JP15778379A patent/JPS5680168A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5680168A (en) | 1981-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02303157A (ja) | 非対称ｃｍｏｓ電界効果トランジスタ | |
| JPS61166075A (ja) | 半導体装置およびその製造方法 | |
| US5422287A (en) | Thin film transistor and process for producing the same | |
| US5319231A (en) | Insulated gate semiconductor device having an elevated plateau like portion | |
| JPS6159671B2 (enrdf_load_stackoverflow) | ||
| JPS6161544B2 (enrdf_load_stackoverflow) | ||
| JPS6032974B2 (ja) | 半導体装置の製造方法 | |
| JPS6141130B2 (enrdf_load_stackoverflow) | ||
| JP4160174B2 (ja) | 半導体装置 | |
| JPS6292327A (ja) | 半導体装置及びその製造方法 | |
| JPS6132576A (ja) | 半導体装置 | |
| JPH0258771B2 (enrdf_load_stackoverflow) | ||
| JPH0580820B2 (enrdf_load_stackoverflow) | ||
| JPS5929137B2 (ja) | 半導体装置及びその製造方法 | |
| JPS60208863A (ja) | Ｍｏｓトランジスタ及びその製造方法 | |
| JPS5996770A (ja) | 集積回路の製造方法 | |
| JPH0213929B2 (enrdf_load_stackoverflow) | ||
| JPS61288427A (ja) | 半導体装置の製造方法 | |
| JPH06181219A (ja) | 半導体装置の製造方法 | |
| JPS6250973B2 (enrdf_load_stackoverflow) | ||
| JPS6057974A (ja) | 半導体装置の製造方法 | |
| JPH055172B2 (enrdf_load_stackoverflow) | ||
| JPS59194431A (ja) | 半導体基板へのイオン注入方法 | |
| JPH0590574A (ja) | 半導体装置 | |
| JPH0556026B2 (enrdf_load_stackoverflow) |