JPS6159525B2 - - Google Patents
Info
- Publication number
- JPS6159525B2 JPS6159525B2 JP53066384A JP6638478A JPS6159525B2 JP S6159525 B2 JPS6159525 B2 JP S6159525B2 JP 53066384 A JP53066384 A JP 53066384A JP 6638478 A JP6638478 A JP 6638478A JP S6159525 B2 JPS6159525 B2 JP S6159525B2
- Authority
- JP
- Japan
- Prior art keywords
- mol
- porcelain
- semiconductor
- parts
- mol parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000003985 ceramic capacitor Substances 0.000 claims abstract description 4
- 229910052573 porcelain Inorganic materials 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 claims 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 8
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910002367 SrTiO Inorganic materials 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
- H01G4/1281—Semiconductive ceramic capacitors with grain boundary layer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6638478A JPS54157300A (en) | 1978-06-01 | 1978-06-01 | Semi-conductor porcelain capacitorsigma element manufacturing method |
| DE19792921807 DE2921807A1 (de) | 1978-06-01 | 1979-05-29 | Halbleiterkeramikkondensator und verfahren zu seiner herstellung |
| CH509379A CH638948B (de) | 1978-06-01 | 1979-05-31 | Halbleitendes keramisches dielektrikum fuer einen keramischen kondensator. |
| GB7919035A GB2026466B (en) | 1978-06-01 | 1979-05-31 | Ceramic capacitor composition |
| HK208/85A HK20885A (en) | 1978-06-01 | 1985-03-21 | Semiconductor ceramic capacitor and method for making the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6638478A JPS54157300A (en) | 1978-06-01 | 1978-06-01 | Semi-conductor porcelain capacitorsigma element manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54157300A JPS54157300A (en) | 1979-12-12 |
| JPS6159525B2 true JPS6159525B2 (US06826419-20041130-M00005.png) | 1986-12-17 |
Family
ID=13314266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6638478A Granted JPS54157300A (en) | 1978-06-01 | 1978-06-01 | Semi-conductor porcelain capacitorsigma element manufacturing method |
Country Status (5)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56144522A (en) * | 1980-04-11 | 1981-11-10 | Matsushita Electric Ind Co Ltd | Grain boundary dielectric layer type semiconductor porcelain composition |
| JPS5739520A (en) * | 1980-08-20 | 1982-03-04 | Matsushita Electric Ind Co Ltd | Grain boundary dielectric layer type semiconductor porcelain composition |
| DE3035793C2 (de) * | 1980-09-23 | 1985-11-07 | Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto | Verfahren zur Herstellung von Grenzschicht-Halbleiterkeramik-Kondensatoren |
| US4347167A (en) * | 1980-10-01 | 1982-08-31 | University Of Illinois Foundation | Fine-grain semiconducting ceramic compositions |
| US4367265A (en) * | 1981-04-06 | 1983-01-04 | North American Philips Corporation | Intergranular insulation type semiconductive ceramic and method of producing same |
| JPS5920908A (ja) * | 1982-07-26 | 1984-02-02 | 株式会社村田製作所 | 温度補償用誘電体磁器組成物 |
| FR2645850A1 (fr) * | 1989-04-17 | 1990-10-19 | Commissariat Energie Atomique | Composition ceramique dielectrique a base de ferrite et son procede de fabrication |
-
1978
- 1978-06-01 JP JP6638478A patent/JPS54157300A/ja active Granted
-
1979
- 1979-05-29 DE DE19792921807 patent/DE2921807A1/de not_active Ceased
- 1979-05-31 CH CH509379A patent/CH638948B/de unknown
- 1979-05-31 GB GB7919035A patent/GB2026466B/en not_active Expired
-
1985
- 1985-03-21 HK HK208/85A patent/HK20885A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2921807A1 (de) | 1979-12-06 |
| JPS54157300A (en) | 1979-12-12 |
| GB2026466A (en) | 1980-02-06 |
| GB2026466B (en) | 1982-07-14 |
| HK20885A (en) | 1985-03-29 |
| CH638948B (de) | |
| CH638948GA3 (US06826419-20041130-M00005.png) | 1983-10-31 |
