JPS6157709B2 - - Google Patents
Info
- Publication number
- JPS6157709B2 JPS6157709B2 JP14416278A JP14416278A JPS6157709B2 JP S6157709 B2 JPS6157709 B2 JP S6157709B2 JP 14416278 A JP14416278 A JP 14416278A JP 14416278 A JP14416278 A JP 14416278A JP S6157709 B2 JPS6157709 B2 JP S6157709B2
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- layer
- resistance
- film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 95
- 229920005591 polysilicon Polymers 0.000 claims description 90
- 239000012535 impurity Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 53
- 239000010408 film Substances 0.000 description 24
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- -1 arsenic ions Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14416278A JPS5571055A (en) | 1978-11-24 | 1978-11-24 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14416278A JPS5571055A (en) | 1978-11-24 | 1978-11-24 | Semiconductor device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5571055A JPS5571055A (en) | 1980-05-28 |
| JPS6157709B2 true JPS6157709B2 (de) | 1986-12-08 |
Family
ID=15355632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14416278A Granted JPS5571055A (en) | 1978-11-24 | 1978-11-24 | Semiconductor device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5571055A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58122769A (ja) * | 1982-01-18 | 1983-07-21 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPS59208855A (ja) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | 配線構造 |
| US5223455A (en) * | 1987-07-10 | 1993-06-29 | Kabushiki Kaisha Toshiba | Method of forming refractory metal film |
-
1978
- 1978-11-24 JP JP14416278A patent/JPS5571055A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5571055A (en) | 1980-05-28 |
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