JPS6156842A - Electrostatic attractive plate - Google Patents

Electrostatic attractive plate

Info

Publication number
JPS6156842A
JPS6156842A JP17674484A JP17674484A JPS6156842A JP S6156842 A JPS6156842 A JP S6156842A JP 17674484 A JP17674484 A JP 17674484A JP 17674484 A JP17674484 A JP 17674484A JP S6156842 A JPS6156842 A JP S6156842A
Authority
JP
Japan
Prior art keywords
plate
electrostatic
electrode
insulating substrate
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17674484A
Other languages
Japanese (ja)
Inventor
Tsukasa Yaita
矢板 司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP17674484A priority Critical patent/JPS6156842A/en
Publication of JPS6156842A publication Critical patent/JPS6156842A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable a plate shaped workpiece to be attractively attached in a surface contact condition to a thin layer of elastic insulating material on an insulating base plate, by providing an electrostatic electrode on a plane equal to that of the insulating base plate and finishing a surface of the insulating base plate after it forms the electrode. CONSTITUTION:An insulating base plate consists of an Al2O3 plate in diameter about 300mm., and the plate 1, after its surface is finished by machining, drills a groover for an electrode by machining. Next, the plate 1, embedding an electrode material in this groove and forming an electrostatic electrode 2 and 3, applies surface finishing again by machining so that a surface of the insulating base plate 1 may be in an equal relation to a surface of the electrostatic electrode 2 and 3. Finally the insulating base plate 1 coats its surface with a thin layer 4 of elastic insulating material to a thickness about 0.2mm.. By this electrostatic attractive plate, a plate shaped workpiece 5 placed on the thin layer 4 of elastic insulating material is attractively held to said layer 4 in a surface contact condition.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体製造時において半導体つZ/・等の被
加工板状体の保持具として使用される静電吸着板に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrostatic chuck plate used as a holder for a plate-shaped object to be processed, such as a semiconductor chip, during semiconductor manufacturing.

〔従来の技術〕[Conventional technology]

従来よシ半導体製造時において、被加工ウニノ・に対す
るイオンビームミリングあるいはマグネトロンスパッタ
リングによるエツチングを行なう際に、被加工ウニノ・
を保持するために静電吸着板が使用されている。
Conventionally, during semiconductor manufacturing, when etching the workpiece by ion beam milling or magnetron sputtering,
An electrostatic adsorption plate is used to hold the

この静電吸着板は、例えば第2図(a)、(b)および
第6図に示されているように、 At203よりなる絶
縁基板1と、この絶縁基板1の表面上に正負交互に配列
された櫛歯状(第2図(a))または渦巻状(第2図(
b))の静電電極2および3と、絶縁基板1の表面と静
電電極2および3とを被って設けられた弾性絶縁材薄層
4とよりなり、この絶縁材薄層4上に半導体ウニノ・の
ような被加工板状体5を載置した状態で正負の静電電極
2および3に+15001fルトおよび−1500ボル
ト程度の電圧を印加して、被加工板状体5を吸着保持す
るようになされている。そしてこの静電吸着板に被加工
板状体5を吸着保持させた状態で、被加工板状体5に対
して例えばイオンビームミリングによるエツチング加工
を施すが、この゛加工により被加工板状体5に熱エネル
ギが発生して被加工板状体5の温度が上昇する。この温
度上昇が著しい場合、エツチングのために被加工板状体
5の上面に塗布されているフォトレノストが炭化してそ
の被加工板状体5が不良品となるため1弾性絶縁材薄層
4の上面と被加工板状体5の下面との密着性を良好にし
て被加工板状体5に発生した熱を弾性絶縁材薄層4を介
して絶縁基板1に伝達するとともに。
As shown in FIGS. 2(a), (b) and FIG. 6, this electrostatic adsorption plate includes an insulating substrate 1 made of At203, and electrodes arranged alternately in positive and negative directions on the surface of this insulating substrate 1. comb-like shape (Fig. 2(a)) or spiral shape (Fig. 2(a))
It consists of the electrostatic electrodes 2 and 3 of b)) and an elastic insulating thin layer 4 provided covering the surface of the insulating substrate 1 and the electrostatic electrodes 2 and 3. With a plate-like object 5 to be processed, such as UNINO, placed thereon, a voltage of approximately +15001 volts and -1500 volts is applied to the positive and negative electrostatic electrodes 2 and 3 to attract and hold the plate-like object 5 to be processed. It is done like this. Then, with the plate-like object 5 to be processed being attracted and held by this electrostatic adsorption plate, the plate-like object 5 to be processed is subjected to an etching process, for example, by ion beam milling. Thermal energy is generated at 5, and the temperature of the plate-shaped object 5 to be processed rises. If this temperature rise is significant, the photorenost coated on the top surface of the plate-shaped object 5 to be processed for etching will carbonize and the plate-shaped object 5 to be processed will become a defective product. The heat generated in the plate-like object 5 to be processed is transmitted to the insulating substrate 1 via the elastic insulating thin layer 4 by improving the adhesion between the upper surface and the lower surface of the plate-like object 5 to be processed.

絶縁基板1の下面に冷却水6を接触させ、この冷却水6
中に放熱するようなされている。
Cooling water 6 is brought into contact with the lower surface of the insulating substrate 1, and this cooling water 6
It is designed to dissipate heat inside.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

以上の記載から明らかなように、被加工板状体5との密
着性の点から、弾性絶縁材薄層4の表面は可能な限り平
坦であることが必要である。
As is clear from the above description, the surface of the elastic insulating thin layer 4 needs to be as flat as possible from the viewpoint of adhesion to the plate-like object 5 to be processed.

しかしながら、第2図(a)、(b)および第6図に示
されている櫛歯状または渦巻状の静電電極を有(,1す
る従来の静電吸着板の場合、それらの静電電極2および
3がシルクスクリーン印刷法によって絶縁基板1上に被
着されるため、静電電極2および3が絶縁基板1の表面
上に突条として形成されるため、絶縁基板1の表面と静
電電極2および3を被ってシルクスクリーン印刷法で設
けられる弾性絶縁材薄層40表面に影響を与え、この薄
層4の表面の平坦度が良好でないという欠点があった。
However, in the case of conventional electrostatic adsorption plates having comb-shaped or spiral electrostatic electrodes as shown in FIGS. 2(a), (b) and 6, their electrostatic Since the electrodes 2 and 3 are deposited on the insulating substrate 1 by the silk screen printing method, the electrostatic electrodes 2 and 3 are formed as protrusions on the surface of the insulating substrate 1, so that the surface of the insulating substrate 1 and the electrostatic electrodes 2 and 3 are formed as protrusions. This has a disadvantage in that it affects the surface of the elastic insulating thin layer 40, which is provided by silk screen printing over the electrodes 2 and 3, and the surface flatness of this thin layer 4 is not good.

したがって、面接触状態が望ましい被加工板状体5の下
面と絶縁材薄層4との接触状態が点接触状態となシ、被
加工板状体5からの熱の放散が充分に行なわれない場合
があった。
Therefore, if the contact state between the lower surface of the plate-like object 5 to be processed and the thin insulating material layer 4, which is preferably a surface contact state, is a point contact state, heat dissipation from the plate-like object 5 to be processed will not be sufficient. There was a case.

一般に、エツチングに使用されるフォトレノストの耐熱
温度は100°C以下とされておシ、温度が100℃を
超えるとフォトレノストが炭化するため、その被加工板
状体5は使用不能になる。この被加工板状体5が直径約
75iz、厚さ0.2〜Q、3mm程度のシリコンウニ
ノ・である場合には、このシリコンウニノ・が若干の柔
軟性を有するため。
Generally, the heat resistant temperature of photorenost used for etching is set to be 100° C. or less, and if the temperature exceeds 100° C., the photorenost will carbonize and the plate-shaped object 5 to be processed will become unusable. When the plate-like object 5 to be processed is a silicone material with a diameter of about 75 iz, a thickness of 0.2 to Q, and about 3 mm, this silicone material has some flexibility.

絶縁材薄層40表面の平坦度がさして良好でない場合で
も、被加工板状体5との密着性は良好であり、かつシリ
コンウニ・・の熱伝導度が良いことと相俟って、被加工
板状体5の温度上昇は許容範囲内にある。これに反し、
被加工板状体5が、)<プルメモリー用GGGウニノ・
、薄膜磁気ヘッド用A、a203 TicまたはEB露
光マスク用ガラス基板等の場合、被加工板状体5の基板
の熱伝導度が良好でなくかつ硬度が高いため柔軟性を有
しないから、絶縁材薄層4表面の特に良好な平面度が要
求される。
Even if the flatness of the surface of the thin insulating material layer 40 is not very good, the adhesion with the plate-shaped object 5 to be processed is good, and the silicon sea urchin... The temperature rise of the processed plate-shaped body 5 is within the permissible range. On the contrary,
The plate-shaped object 5 to be processed is
In the case of glass substrates for A, A203 TIC or EB exposure masks for thin film magnetic heads, etc., the substrate of the plate-shaped object 5 to be processed does not have good thermal conductivity and has high hardness, so it does not have flexibility. Particularly good flatness of the surface of the thin layer 4 is required.

しかしながら、静電電極2および3が絶縁基板1上にシ
ルクスクリーン印刷法で突設された場合には、絶縁材薄
層40表面の良好な平面度は得られにくいものであった
However, when the electrostatic electrodes 2 and 3 are provided protrudingly on the insulating substrate 1 by silk screen printing, it is difficult to obtain good flatness of the surface of the thin insulating layer 40.

それに加えて、静電電極2および3をシルクスクリーン
印刷法で絶縁基板1上に形成する場合、精度および歩留
りの点でも難点を有していた。
In addition, when the electrostatic electrodes 2 and 3 are formed on the insulating substrate 1 by silk screen printing, there are also problems in accuracy and yield.

〔問題点を解決するための手段〕[Means for solving problems]

本発明においては、静電電極が、絶縁基板の表面部分に
、この絶縁基板の表面と静電電極の表面とが平坦な同一
平面をなすような態様で埋設てれた新規な静電吸着板を
提供するものでちる。
The present invention provides a novel electrostatic adsorption plate in which an electrostatic electrode is embedded in a surface portion of an insulating substrate in such a manner that the surface of the insulating substrate and the surface of the electrostatic electrode form the same flat plane. This is what we offer.

〔作 用〕[For production]

本発明により、絶縁基板と静電電極を被って設けられた
弾性絶縁材薄層の表面の平面度がきわめて良好になり、
正負の静電電極間に通電すれば。
According to the present invention, the flatness of the surface of the elastic insulating thin layer provided over the insulating substrate and the electrostatic electrode is extremely good,
If current is passed between the positive and negative electrostatic electrodes.

被加工板状体は絶縁材薄層に対し面接触状態をもって静
電吸着板上に吸着保持される。
The plate-shaped object to be processed is attracted and held on the electrostatic attraction plate in surface contact with the thin layer of insulating material.

〔実施例〕〔Example〕

第1図は本発明による静電吸着板の一実施例を第6図に
対応させて示し、絶縁基板1は、直径約300鶴のAt
203板よシなり、その表面に対し機械加工による平面
仕上げを行なった後、電極用の溝7を機械加工によシ穿
設する。次にこの溝7内に電極用材料を埋込んで静電電
極2および3を形成し、再度機械加工により絶縁基板1
の表面と静電電極2および3の表面とが平坦な同一平面
関係をなすように平面仕上げを行なう。最後に絶縁基板
1の表面と静電電極2および3とを被って弾性絶縁材薄
層4を約Q、2mrnの厚さに被着させる。
FIG. 1 shows an embodiment of the electrostatic adsorption plate according to the present invention in correspondence with FIG.
A 203 plate is made, and after its surface is finished flat by machining, grooves 7 for electrodes are bored by machining. Next, electrode material is buried in this groove 7 to form electrostatic electrodes 2 and 3, and the insulating substrate 1 is machined again.
The surface of the electrostatic electrode 2 and the surface of the electrostatic electrodes 2 and 3 are flat and coplanar. Finally, a thin layer of elastic insulation material 4 is deposited over the surface of the insulating substrate 1 and the electrostatic electrodes 2 and 3 to a thickness of about Q, 2 mrn.

〔発明の効果〕〔Effect of the invention〕

以上の説明で明らかなように1本発明によれば。 According to one aspect of the present invention, as is clear from the above description.

静電電極が絶縁基板の表面部分に、この絶縁基板の表面
と静電電極の表面とが平坦な同一平面関係をなすような
態様で埋設されているため、電極形成後の絶縁基板の表
面を機械加工によって平面仕上げを行なうことができる
から、その上に被着された弾性絶縁材薄層の表面を平面
度のきわめて良好なものとすることができる。したがっ
て、被加工板状体が静電吸着板上に面接触状態で吸着さ
れ、被加工板状体からの良好な熱放散が可能である効果
がある。さらに静電電極形成に際しての良好な精度およ
び歩留シを期待できる利点もある。
Since the electrostatic electrode is embedded in the surface of the insulating substrate in such a manner that the surface of the insulating substrate and the surface of the electrostatic electrode are flat and coplanar, the surface of the insulating substrate after electrode formation is Since the plane can be finished by machining, the surface of the thin layer of elastic insulation material deposited thereon can be provided with very good flatness. Therefore, the plate-like object to be processed is adsorbed on the electrostatic adsorption plate in a surface contact state, and there is an effect that good heat dissipation from the plate-like object to be processed is possible. Furthermore, there is the advantage that good precision and yield can be expected when forming electrostatic electrodes.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による静電吸着板の部分的拡大断面図、
第2図(a)、(b)は従来の静電吸着板の一部を切截
した平面図、第6図は第2図(a)、(b)の1[[−
I[I線上の部分的拡大断面図である。 図面において、1は絶縁基板、2および3は静電電極、
4は弾性絶縁材薄層、5は被加工板状体゛°1    
 をそれぞれ示す。
FIG. 1 is a partially enlarged sectional view of an electrostatic adsorption plate according to the present invention;
2(a) and 2(b) are partially cutaway plan views of a conventional electrostatic adsorption plate, and FIG. 6 is a 1 [[-
I[I] is a partially enlarged sectional view taken along line I. In the drawings, 1 is an insulating substrate, 2 and 3 are electrostatic electrodes,
4 is a thin layer of elastic insulation material, 5 is a plate-shaped object to be processed ゛°1
are shown respectively.

Claims (1)

【特許請求の範囲】 1、絶縁基板と、この絶縁基板の表面上に正負交互に配
列された静電電極と、前記絶縁基板の表面と前記静電電
極とを被って設けられた弾性絶縁材薄層とよりなり、こ
の絶縁材薄層上に被加工板状体を載置した状態で前記正
負の静電電極間に通電して前記被加工板状体を吸着保持
するようになされた静電吸着板において、 前記静電電極が前記絶縁基板の表面部分に、この絶縁基
板の表面と前記静電電極の表面とが平坦な同一平面関係
をなすような態様で埋設されていることを特徴とする静
電吸着板。
[Claims] 1. An insulating substrate, electrostatic electrodes arranged alternately in positive and negative directions on the surface of the insulating substrate, and an elastic insulating material provided to cover the surface of the insulating substrate and the electrostatic electrodes. The electrostatic material is made of a thin layer of insulating material, and when a plate-like object to be processed is placed on this thin layer of insulating material, current is applied between the positive and negative electrostatic electrodes to attract and hold the plate-like object to be processed. The electrostatic adsorption plate is characterized in that the electrostatic electrode is embedded in a surface portion of the insulating substrate in such a manner that the surface of the insulating substrate and the surface of the electrostatic electrode form a flat coplanar relationship. Electrostatic adsorption plate.
JP17674484A 1984-08-27 1984-08-27 Electrostatic attractive plate Pending JPS6156842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17674484A JPS6156842A (en) 1984-08-27 1984-08-27 Electrostatic attractive plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17674484A JPS6156842A (en) 1984-08-27 1984-08-27 Electrostatic attractive plate

Publications (1)

Publication Number Publication Date
JPS6156842A true JPS6156842A (en) 1986-03-22

Family

ID=16019039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17674484A Pending JPS6156842A (en) 1984-08-27 1984-08-27 Electrostatic attractive plate

Country Status (1)

Country Link
JP (1) JPS6156842A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5184398A (en) * 1991-08-30 1993-02-09 Texas Instruments Incorporated In-situ real-time sheet resistance measurement method
JPH09223729A (en) * 1996-02-19 1997-08-26 Kyocera Corp Electrostatic chuck
US5729423A (en) * 1994-01-31 1998-03-17 Applied Materials, Inc. Puncture resistant electrostatic chuck
US5745331A (en) * 1994-01-31 1998-04-28 Applied Materials, Inc. Electrostatic chuck with conformal insulator film
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US6278600B1 (en) 1994-01-31 2001-08-21 Applied Materials, Inc. Electrostatic chuck with improved temperature control and puncture resistance

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57187847A (en) * 1981-05-13 1982-11-18 Hitachi Ltd X-ray tube unit
JPS5957446A (en) * 1982-09-28 1984-04-03 Kokusai Electric Co Ltd Electrostatic adsorption type substrate holder

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57187847A (en) * 1981-05-13 1982-11-18 Hitachi Ltd X-ray tube unit
JPS5957446A (en) * 1982-09-28 1984-04-03 Kokusai Electric Co Ltd Electrostatic adsorption type substrate holder

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5184398A (en) * 1991-08-30 1993-02-09 Texas Instruments Incorporated In-situ real-time sheet resistance measurement method
US5377071A (en) * 1991-08-30 1994-12-27 Texas Instruments Incorporated Sensor apparatus and method for real-time in-situ measurements of sheet resistance and its uniformity pattern in semiconductor processing equipment
US5400209A (en) * 1991-08-30 1995-03-21 Texas Instruments Incorporated In-situ real-time sheet resistance measurement system and method using an electrostatic chuck
US5729423A (en) * 1994-01-31 1998-03-17 Applied Materials, Inc. Puncture resistant electrostatic chuck
US5745331A (en) * 1994-01-31 1998-04-28 Applied Materials, Inc. Electrostatic chuck with conformal insulator film
US5753132A (en) * 1994-01-31 1998-05-19 Applied Materials, Inc. Method of making electrostatic chuck with conformal insulator film
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US5986875A (en) * 1994-01-31 1999-11-16 Applied Materials, Inc. Puncture resistant electrostatic chuck
US6278600B1 (en) 1994-01-31 2001-08-21 Applied Materials, Inc. Electrostatic chuck with improved temperature control and puncture resistance
JPH09223729A (en) * 1996-02-19 1997-08-26 Kyocera Corp Electrostatic chuck

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