JPS6155785B2 - - Google Patents
Info
- Publication number
- JPS6155785B2 JPS6155785B2 JP52026195A JP2619577A JPS6155785B2 JP S6155785 B2 JPS6155785 B2 JP S6155785B2 JP 52026195 A JP52026195 A JP 52026195A JP 2619577 A JP2619577 A JP 2619577A JP S6155785 B2 JPS6155785 B2 JP S6155785B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal film
- film
- semiconductor device
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は、半導体装置、特に電極構造に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and particularly to an electrode structure.
半導体素子の金属電極材料には、半導体基板及
び絶縁膜層との密着性の高いこと、化学的、熱的
安定であること、電気伝導度が高いこと等が要求
される。これらの要求を充分に満足する金属であ
れば、１種の金属で電極を構成することができる
が、素子の使用条件及び外部リード取出等におい
て金属の種類に制限を受ける場合は、数種の金属
を多重に重ねることにより金属電極としての要求
を満足する構成が用いられる。 Metal electrode materials for semiconductor devices are required to have high adhesion to the semiconductor substrate and insulating film layer, be chemically and thermally stable, and have high electrical conductivity. Electrodes can be made of one type of metal as long as it fully satisfies these requirements, but if there are restrictions on the type of metal due to device usage conditions or external lead extraction, several types of metal can be used. A configuration is used that satisfies the requirements for a metal electrode by layering metals in multiple layers.
第１図は従来の半導体装置の１例の断面図であ
る。 FIG. 1 is a sectional view of an example of a conventional semiconductor device.
このような半導体装置において、半導体基板１
および絶縁膜２と接触する金属３は、電極強度を
強くする目的で密着性の高い金属が選ばれる為、
シヨツトキーバリア素子のように半導体基板と接
触する金属が要求特性に応じて限定される用途に
おいては、金属と半導体基板及び絶縁膜との密着
性が低い場合、電極強度の弱い素子となつてしま
う。電極強度の弱い素子は、その製造中の再現性
が悪く、良品率、信頼性の低下の原因となる。 In such a semiconductor device, a semiconductor substrate 1
The metal 3 in contact with the insulating film 2 is selected from a metal with high adhesion in order to strengthen the electrode strength.
In applications such as Schottky barrier elements, where the metal that comes into contact with the semiconductor substrate is limited depending on the required characteristics, if the adhesion between the metal and the semiconductor substrate and insulating film is low, the electrode strength will be weak. Put it away. Elements with weak electrode strength have poor reproducibility during manufacture, causing a decline in the yield rate and reliability.
本発明は、上記欠点を除き、半導体基板と接触
する金属の種類に加えられる条件を緩和し、電極
の密着強度の強い半導体素子を提供するものであ
る。 The present invention eliminates the above drawbacks, relaxes the conditions imposed on the type of metal in contact with the semiconductor substrate, and provides a semiconductor element with strong electrode adhesion strength.
本発明は、積層金属電極構造を有する半導体装
置において、半導体基板と絶縁体とに接触してい
るかあるいは絶縁体のみに接触している第１の金
属の上に絶縁体との密着性の良好な第２の金属膜
を前記第１の金属膜よりも広い面積で設けたこと
を特徴とする。 The present invention provides a semiconductor device having a laminated metal electrode structure, in which a first metal that is in contact with a semiconductor substrate and an insulator or only in contact with an insulator is placed on top of a first metal that has good adhesion with the insulator. The present invention is characterized in that the second metal film is provided with a larger area than the first metal film.
本発明を実施例により説明する。 The present invention will be explained by examples.
第２図は本発明の半導体装置の１実施例の断面
図である。 FIG. 2 is a sectional view of one embodiment of the semiconductor device of the present invention.
半導体基板１１の上に絶縁膜１２が設けられて
おりその開口部に第１の金属膜１３が設けられて
いる。 An insulating film 12 is provided on a semiconductor substrate 11, and a first metal film 13 is provided in an opening of the insulating film 12.
第１の金属膜としては、例えばNiまたはMoが
用いられる。次に、第１の金属膜及び絶縁膜との
密着性の良好な第２の金属例えばTiあるいはCr
の膜１４を第１の金属膜１３の上に該第１の金属
膜１３よりも広い面積に形成する。更にこの第２
の金属膜１４の上にこれと同一面積で且つ密着性
の良好な第３の金属膜１５を設ける。第３の金属
膜形成には、例えばPtあるいはＡが用いられ
る。 For example, Ni or Mo is used as the first metal film. Next, a second metal, such as Ti or Cr, which has good adhesion to the first metal film and the insulating film is applied.
A film 14 is formed on the first metal film 13 to have a wider area than the first metal film 13. Furthermore, this second
A third metal film 15 having the same area and good adhesion is provided on the metal film 14 . For example, Pt or A is used to form the third metal film.
第３の金属膜は外部リード引き出し時及びその
後の熱的あるいは機械的シヨツクを受けたときに
第３の金属膜のみが剥れることがないように、第
２の金属膜に良く密着する金属を用いる。 The third metal film is made of a metal that adheres well to the second metal film so that only the third metal film does not peel off when external leads are drawn out and when subjected to subsequent thermal or mechanical shock. use
このような金属を用いると、電極の強度は第２
の金属膜と絶縁膜との密着強度により決まる。従
つて、第１の金属膜にはオーム接触あるいはシヨ
ツトキーバリアを目的とした金属、第２の金属膜
には絶縁膜との密着強度の良い金属、第３の金属
膜には第２の金属膜と良く密着し、且つ外部引出
リードの取付けが容易な金属を選ぶことができる
ので、金属選択条件が緩和され、しかも電極強度
の良好な半導体装置を得ることができる。 When such a metal is used, the strength of the electrode becomes second
It is determined by the adhesion strength between the metal film and the insulating film. Therefore, the first metal film contains a metal intended for ohmic contact or a shot key barrier, the second metal film contains a metal with good adhesion strength to the insulating film, and the third metal film contains a second metal. Since it is possible to select a metal that adheres well to the metal film and to which external lead leads can be easily attached, metal selection conditions are relaxed and a semiconductor device with good electrode strength can be obtained.
第１図は、従来の半導体装置の１例の断面図、
第２図は、本発明の半導体装置の１実施例の断面
図である。
図において、１，１１…半導体基板、２，１２
…絶縁膜、３，１３…第１の金属膜、４，１４…
第２の金属膜、５，１５…第３の金属膜、であ
る。
FIG. 1 is a cross-sectional view of an example of a conventional semiconductor device.
FIG. 2 is a sectional view of one embodiment of the semiconductor device of the present invention. In the figure, 1, 11...semiconductor substrate, 2, 12
...Insulating film, 3, 13... First metal film, 4, 14...
A second metal film, 5, 15, . . . a third metal film.
Claims (1)
て半導体基板と絶縁体とに接触している第１の金
属膜の上に絶縁体との密着性の良好な第２の金属
膜を前記第１の金属膜の全面を被覆しかつ該第１
の金属膜の全周囲から外方へ延在するように設け
たことを特徴とする半導体装置。1. In a semiconductor device having a laminated metal electrode structure, a second metal film having good adhesion to the insulator is placed on the first metal film in contact with the semiconductor substrate and the insulator. covering the entire surface of the first
A semiconductor device characterized in that the semiconductor device is provided so as to extend outward from the entire periphery of a metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2619577A JPS53110465A (en) | 1977-03-09 | 1977-03-09 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2619577A JPS53110465A (en) | 1977-03-09 | 1977-03-09 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53110465A JPS53110465A (en) | 1978-09-27 |
| JPS6155785B2 true JPS6155785B2 (en) | 1986-11-29 |
Family
ID=12186700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2619577A Granted JPS53110465A (en) | 1977-03-09 | 1977-03-09 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53110465A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5728359A (en) * | 1980-07-28 | 1982-02-16 | Fujitsu Ltd | Semiconductor device |
| JPS582023A (en) * | 1981-06-26 | 1983-01-07 | Internatl Rectifier Corp Japan Ltd | Planar type semiconductor device |
| JPS5954960U (en) * | 1982-10-02 | 1984-04-10 | ロ−ム株式会社 | Electrode structure of semiconductor devices |
| JP5598297B2 (en) * | 2010-12-08 | 2014-10-01 | 住友電気工業株式会社 | Semiconductor light modulation device and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5183776A (en) * | 1975-01-20 | 1976-07-22 | Matsushita Electronics Corp | HANDOTAISOSHINOSEIZOHOHO |
| JPS51141578A (en) * | 1975-05-19 | 1976-12-06 | Nat Semiconductor Corp | Method of forming gang connecting bump for integrated circuits |
| JPS523383A (en) * | 1975-06-24 | 1977-01-11 | Nec Corp | Manufacturing method of semiconductor device electrode |
-
1977
- 1977-03-09 JP JP2619577A patent/JPS53110465A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5183776A (en) * | 1975-01-20 | 1976-07-22 | Matsushita Electronics Corp | HANDOTAISOSHINOSEIZOHOHO |
| JPS51141578A (en) * | 1975-05-19 | 1976-12-06 | Nat Semiconductor Corp | Method of forming gang connecting bump for integrated circuits |
| JPS523383A (en) * | 1975-06-24 | 1977-01-11 | Nec Corp | Manufacturing method of semiconductor device electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53110465A (en) | 1978-09-27 |
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