JPS6149816B2 - - Google Patents
Info
- Publication number
- JPS6149816B2 JPS6149816B2 JP4389185A JP4389185A JPS6149816B2 JP S6149816 B2 JPS6149816 B2 JP S6149816B2 JP 4389185 A JP4389185 A JP 4389185A JP 4389185 A JP4389185 A JP 4389185A JP S6149816 B2 JPS6149816 B2 JP S6149816B2
- Authority
- JP
- Japan
- Prior art keywords
- whisker
- lead
- semiconductor substrate
- metal layer
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 2
- 239000005394 sealing glass Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
Description
【発明の詳細な説明】
本発明は単一能動領域を有する半導体基板の表
面に導体金属の盛り上げ等により凸状の電極を形
成された構造を有するダイオードに関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a diode having a structure in which a convex electrode is formed on the surface of a semiconductor substrate having a single active region by, for example, raising a conductive metal.
従来、この種のダイオードは、能動領域部分を
覆うようにメツキ等により凸状の電極を形成し、
その部分にリボン状の金属接続体（以下ウイスカ
リードと呼ぶ）を接触させ、ガラス等で封止した
構造が一般的である。第１図は従来構造を示す断
面図で、１は封止ガラス、２はウイスカリード、
３は半導体基板、４はヘツダをそれぞれ示す。 Conventionally, this type of diode has a convex electrode formed by plating or the like so as to cover the active region.
A common structure is that a ribbon-shaped metal connector (hereinafter referred to as a whisker lead) is brought into contact with the part and sealed with glass or the like. Figure 1 is a cross-sectional view showing the conventional structure, where 1 is a sealing glass, 2 is a whisker lead,
3 represents a semiconductor substrate, and 4 represents a header.
そこで、ウイスカリード２と半導体基板３との
接触部を拡大してみるならば、第２図に示すよう
に、半導体基板３の表面に能動領域５を覆うよう
にして凸状電極６が形成されており、ウイスカリ
ード２と電極６がウイスカリード２から圧力を伴
つて接触している。 Therefore, if we enlarge the contact area between the whisker lead 2 and the semiconductor substrate 3, as shown in FIG. 2, a convex electrode 6 is formed on the surface of the semiconductor substrate 3 so as to cover the active region 5. The whisker lead 2 and the electrode 6 are in contact with each other under pressure from the whisker lead 2.
この構造を有するダイオードではガラス封止す
る際に、ウイスカリードを伝わつて能動領域部に
熱が加えられ、或いはウイスカリードよりの圧力
が直接能動領域に加えられるため、電気的特性を
劣化させる欠点は免れ得なかつた。 When a diode with this structure is sealed with glass, heat is applied to the active area through the whisker lead, or pressure from the whisker lead is applied directly to the active area, so there is no disadvantage of deteriorating electrical characteristics. I couldn't escape it.
これらの欠点を解決するために、本発明による
半導体装置は、能動部を表面に有する半導体基板
と、前記能動部以外の前記半導体基板の表面を覆
う絶縁被膜と、前記能動部に接触して前記絶縁被
膜上に十文字状に延在形成された金属層と、該十
文字状金属層のそれぞれの端部に形成された突起
電極と、各突起電極に圧力をともなつて接触し前
記金属層とは離間しているウイスカリードとを有
する。 In order to solve these drawbacks, a semiconductor device according to the present invention includes: a semiconductor substrate having an active part on its surface; an insulating film that covers the surface of the semiconductor substrate other than the active part; A metal layer formed extending in a criss-cross shape on the insulating coating, a protruding electrode formed at each end of the crisscross-shaped metal layer, and a metal layer that is in contact with each protruding electrode with pressure. and spaced apart whisker leads.
次に図面を参照して説明する。第３図ａ及びｂ
は本発明の一実施例を示すシヨツトキ・バリア・
ダイオードの断面図及び基板表面図で、シヨツト
キ・ベリア形成用金属と外き出し電極用金属の２
層構造からなる金属層７は、能動領域５から酸化
膜８上に十文字状に引き出され、その夫々の端部
に凸形電極６ａ，６ｂ，６ｃおよび６ｄが形成さ
れている。ウイスカリード２は、例えば厚さ約80
μ、MoにAuメツキしたものが用いられ、各凸形
電極６ａ〜６ｄと圧力をともなつて接触してい
る。 Next, a description will be given with reference to the drawings. Figure 3 a and b
shows an embodiment of the present invention.
In the cross-sectional view of the diode and the surface view of the substrate, there are two types: the metal for forming the shot barrier and the metal for the external electrode.
A metal layer 7 having a layered structure is drawn out in a cross shape from the active region 5 onto the oxide film 8, and convex electrodes 6a, 6b, 6c and 6d are formed at each end thereof. Whisker lead 2 has a thickness of about 80 mm, for example.
μ, Mo plated with Au is used, and is in contact with each of the convex electrodes 6a to 6d with pressure.
本発明によれば、能動領域以外の位置に凸形電
極が形成されウイスカリードと接触されているた
め、ウイスカリードよりの圧力が直接能動領域に
加えられることがない。又、能動領域とウイスカ
リードの間に空間を有しているため、封止時の能
動領域への熱の伝導は従来構造のものより少なく
なる。さらに、シヨツキー接合上の空間は突起電
極６外の空間とつながつているので、動作状態に
おける発熱によつて生じる気体の膨張、収縮も緩
和される。 According to the present invention, since the convex electrode is formed at a position other than the active region and is in contact with the whisker lead, pressure from the whisker lead is not directly applied to the active region. Further, since there is a space between the active region and the whisker lead, the conduction of heat to the active region during sealing is reduced compared to the conventional structure. Furthermore, since the space above the Schottsky junction is connected to the space outside the protruding electrode 6, the expansion and contraction of gas caused by heat generation during operation is alleviated.
以上説明したように、従来構造のものと比較し
て能動領域へウイスカリードより直接圧力と熱が
加えられにくいため、製造歩留りは著しく向上す
る。 As explained above, compared to the conventional structure, it is difficult to directly apply pressure and heat to the active region from the whisker lead, so the manufacturing yield is significantly improved.
第１図は従来の封止したダイオードを示す断面
図、第２図はウイスカリードと電極の接触部を示
す拡大断面図、第３図ａ及びｂはそれぞれ本発明
の一実施例を示す断面図及び基板の平面図であ
る。
１……封止ガラス、２……ウイスカリード、３
……半導体基板、４……ヘツダ、５……能動領
域、６……凸形電極、７……引き出し電極、８…
…酸化膜。
FIG. 1 is a cross-sectional view showing a conventional sealed diode, FIG. 2 is an enlarged cross-sectional view showing the contact area between a whisker lead and an electrode, and FIGS. 3 a and b are cross-sectional views each showing an embodiment of the present invention. and a plan view of the substrate. 1...Sealing glass, 2...Whisker lead, 3
... Semiconductor substrate, 4 ... Header, 5 ... Active region, 6 ... Convex electrode, 7 ... Extraction electrode, 8 ...
…Oxide film.
Claims (1)
動部以外の前記半導体基板の表面を覆う絶縁被膜
と、前記能動部に接触して前記絶縁被膜上に十文
字状に延在形成された金属層と、該十文字状金属
層のそれぞれの端部に形成された突起電極と、各
突起電極に圧力をともなつて接触し前記金属層と
は離間しているウイスカリードとを有することを
特徴とする半導体装置。1. A semiconductor substrate having an active part on its surface, an insulating coating covering the surface of the semiconductor substrate other than the active part, and a metal layer extending in a cross shape on the insulating coating in contact with the active part. , a semiconductor characterized in that it has protruding electrodes formed at each end of the criss-cross metal layer, and a whisker lead that contacts each protruding electrode with pressure and is spaced apart from the metal layer. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60043891A JPS6144448A (en) | 1985-03-06 | 1985-03-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60043891A JPS6144448A (en) | 1985-03-06 | 1985-03-06 | Semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3256377A Division JPS53117376A (en) | 1977-03-23 | 1977-03-23 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6144448A JPS6144448A (en) | 1986-03-04 |
| JPS6149816B2 true JPS6149816B2 (en) | 1986-10-31 |
Family
ID=12676325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60043891A Granted JPS6144448A (en) | 1985-03-06 | 1985-03-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144448A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02308752A (en) * | 1989-05-23 | 1990-12-21 | Nakagawa Tekkosho:Kk | Surface-treatment of frozen fish body |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4931507U (en) * | 1972-06-19 | 1974-03-19 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5924282A (en) * | 1982-07-31 | 1984-02-07 | Anritsu Corp | Apparatus for detecting metal |
-
1985
- 1985-03-06 JP JP60043891A patent/JPS6144448A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4931507U (en) * | 1972-06-19 | 1974-03-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6144448A (en) | 1986-03-04 |
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