CN211062546U - Thin film resistor element - Google Patents
Thin film resistor element Download PDFInfo
- Publication number
- CN211062546U CN211062546U CN202020071985.8U CN202020071985U CN211062546U CN 211062546 U CN211062546 U CN 211062546U CN 202020071985 U CN202020071985 U CN 202020071985U CN 211062546 U CN211062546 U CN 211062546U
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- Prior art keywords
- layer
- thin film
- tantalum
- tantalum nitride
- tantalum pentoxide
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 26
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 30
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 30
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 77
- 238000007639 printing Methods 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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Abstract
A thin film resistor element is provided with a tantalum nitride (TaN) layer disposed on an upper surface of a substrate, tantalum pentoxide (Ta)2O5) The layer is arranged on the tantalum nitride layer, and the two electrode layers are separately arranged on the tantalum pentoxide layer or at two ends of the tantalum nitride layer and the tantalum pentoxide layer, so that the thin film resistance element can reduce the oxidation rate of the tantalum nitride layer at high temperature generated in use so as to maintain the electricityThe resistance value is constant.
Description
Technical Field
The present application relates to a thin film resistor, and more particularly to a high temperature resistant thin film resistor.
Background
In general, when a thin film resistor element is used at a high temperature or under the action of a high temperature generated by long-term use, a resistance layer in the resistor element is oxidized, so that the resistor fails.
In view of the fact that the conventional electronic devices are usually kept in operation and the high temperature generated by long-time operation is likely to cause damage to the resistive element, the present application also needs a resistive element with high temperature resistance in addition to the use of a heat dissipation element.
SUMMERY OF THE UTILITY MODEL
In order to achieve the above object, the present application provides a thin film resistor element capable of maintaining a resistance function even when used at a high temperature.
A thin film resistor is prepared by disposing a tantalum nitride (TaN) layer on the upper surface of a substrate, tantalum pentoxide (Ta)2O5) The layer is covered on the tantalum nitride layer, and the two electrode layers are separately arranged at two ends of the tantalum nitride layer and the tantalum pentoxide layer or on the tantalum pentoxide layer and are communicated with the tantalum nitride layer and the tantalum pentoxide layer.
In one embodiment, the device further comprises a passivation layer disposed on the tantalum pentoxide layer, and the two electrode layers are exposed from the passivation layer.
In one embodiment, the two electrode layers extend to the lower surface of the substrate along the side edges of the substrate.
In one embodiment, the two electrode layers overlap, do not overlap or partially overlap two ends of the tantalum nitride layer and the tantalum pentoxide layer.
In one embodiment, the tantalum pentoxide layer has a thickness of 50-200 nm.
In one embodiment, the tantalum nitride layer and the tantalum pentoxide layer are formed by a lamination, sputtering or printing process.
The purpose, technical content, features and effects of the present application will be more readily understood by the following detailed description of the embodiments taken in conjunction with the accompanying drawings.
Drawings
Fig. 1 is a schematic side cross-sectional view of a thin film resistor device according to an embodiment of the present application.
Fig. 2 is a schematic side cross-sectional view of a thin film resistor device according to another embodiment of the present application.
Fig. 3 is a schematic side cross-sectional view of a thin film resistor device according to yet another embodiment of the present application.
Description of the symbols:
10 thin film resistor element
11 substrate
12 electrode layer
13 tantalum nitride layer
14 tantalum pentoxide layer
15 protective layer
Detailed Description
The following detailed description of the embodiments of the present application, taken in conjunction with the accompanying drawings, is intended to illustrate. This application is intended to cover such departures from the present disclosure as come within known or customary practice in the art to which this invention pertains and which fall within the limits of the appended claims. In the description of the specification, numerous specific details are set forth in order to provide a more thorough understanding of the present application; however, the present application may be practiced without some or all of these specific details. In other instances, well-known steps or elements have not been described in detail so as not to unnecessarily obscure the present application. The same or similar elements in the drawings will be denoted by the same or similar symbols. It is noted that the drawings are for illustrative purposes only and do not represent actual sizes or quantities of elements, and some details may not be drawn completely to simplify the drawings.
Fig. 1 is a schematic side cross-sectional view of a thin film resistor device according to an embodiment of the present application. In this embodiment, a thin film resistor 1 includes a substrate 11, a tantalum nitride layer 13 as a resistor layer, a tantalum pentoxide layer 14 as a transition metal layer, and two electrode layers 12.
The tantalum nitride layer 13 substantially covers the upper surface of the substrate 11, and the tantalum pentoxide layer 14 substantially covers the tantalum nitride layer, wherein the tantalum nitride layer 13 and the tantalum pentoxide layer 14 can be formed by means of bonding, sputtering, electroplating, evaporation or printing in the same reaction chamber. Wherein the tantalum pentoxide layer 14 has a thickness of 50-200 nanometers (nm).
The two electrode layers 12 are separately connected to two ends of the tantalum nitride layer and the tantalum pentoxide layer 14, wherein the two electrode layers 12 are overlapped on the tantalum pentoxide layer 14, as shown in fig. 1. In another embodiment, two electrode layers are disposed on opposite ends of the TaN layer 13 and the TaN layer 14 in a contact (non-overlapping) manner, as shown in FIG. 3. It is understood that the two electrode layers 12 may partially overlap (not shown) the tantalum pentoxide layer 14 and the tantalum nitride layer 13, and in the above embodiment, the two electrode layers 12 are both in conduction with the tantalum pentoxide layer 14 and the tantalum nitride layer 13.
Referring to fig. 2 and 3, in this embodiment, the same component arrangement is not repeated, wherein the two electrode layers 12 may extend to the lower surface of the substrate 11 along the side of the substrate 11, i.e. the positive electrode on the upper surface of the substrate is connected to the back electrode on the lower surface of the substrate.
The substrate 11 used in the present application may be a precision ceramic substrate such as alumina, aluminum nitride, or other metal oxide material, which has good heat dissipation properties, but may also be other types of substrates. The substrate 11 is generally rectangular, but may have other suitable shapes.
In the above embodiment, a passivation layer 15 may be further included to cover the tantalum pentoxide layer 14, and the two electrode layers 12 are exposed from the passivation layer 15.
Through high temperature storage tests, as shown in table 1, the thin film resistor element of the present application further includes a tantalum pentoxide layer as a barrier layer to reduce the oxidation rate of the tantalum nitride layer compared to a general thin film resistor element, and after the thin film resistor element is used at a temperature of 155 ℃ for 1,000 hours, the resistance change rate of the thin film resistor element of the present application is still less than 0.1%, and a more stable resistance value is exhibited.
TABLE 1
In summary, the tantalum pentoxide layer covers the tantalum nitride layer in the thin film resistor element, so that the oxidation rate of the tantalum nitride layer is reduced to maintain the constant resistance value at the high temperature generated in use.
The embodiments described above are merely illustrative of the technical ideas and features of the present application, and the content of the present application can be understood and implemented by those skilled in the art, and the scope of the present application should not be limited thereto, i.e., all equivalent changes and modifications made in the spirit of the present application should be covered by the scope of the present application.
Claims (6)
1. A thin film resistive element, comprising:
a substrate;
a tantalum nitride layer disposed on the upper surface of the substrate;
a tantalum pentoxide layer substantially covering the tantalum nitride layer; and
the two electrode layers are separately connected to two ends of the tantalum nitride layer and the tantalum pentoxide layer and are communicated with the tantalum nitride layer and the tantalum pentoxide layer.
2. The thin film resistive element of claim 1, further comprising a protective layer disposed on the tantalum pentoxide layer, and wherein the two electrode layers are exposed from the protective layer.
3. The thin film resistive element according to claim 1, wherein the two electrode layers extend along the side edges of the substrate to the lower surface of the substrate.
4. The thin film resistive element of claim 1, wherein the two electrode layers overlap, do not overlap, or partially overlap both ends of the tantalum nitride layer and the tantalum pentoxide layer.
5. The thin film resistive element of claim 1, wherein the tantalum pentoxide layer has a thickness of 50-200 nanometers.
6. The thin film resistive element of claim 1, wherein the tantalum nitride layer and the tantalum pentoxide layer are formed by a lamination, sputtering or printing process.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108216841U TWM593657U (en) | 2019-12-18 | 2019-12-18 | Thin film resistor element |
| TW108216841 | 2019-12-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211062546U true CN211062546U (en) | 2020-07-21 |
Family
ID=71133506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020071985.8U Active CN211062546U (en) | 2019-12-18 | 2020-01-14 | Thin film resistor element |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN211062546U (en) |
| TW (1) | TWM593657U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112562946A (en) * | 2020-11-27 | 2021-03-26 | 浙江集迈科微电子有限公司 | Tantalum nitride film resistor and preparation method thereof |
-
2019
- 2019-12-18 TW TW108216841U patent/TWM593657U/en unknown
-
2020
- 2020-01-14 CN CN202020071985.8U patent/CN211062546U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112562946A (en) * | 2020-11-27 | 2021-03-26 | 浙江集迈科微电子有限公司 | Tantalum nitride film resistor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM593657U (en) | 2020-04-11 |
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