JPS615532A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS615532A JPS615532A JP59125241A JP12524184A JPS615532A JP S615532 A JPS615532 A JP S615532A JP 59125241 A JP59125241 A JP 59125241A JP 12524184 A JP12524184 A JP 12524184A JP S615532 A JPS615532 A JP S615532A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- gold
- bonding material
- silicon
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、ペレット取付に関し、半導体装置の信頼性向
上に適用して有効な技術、たとえば大型ペレットを搭載
してなる半導体装置に適用して特に有効な技術に関する
ものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to pellet mounting, which is a technique that is effective when applied to improve the reliability of semiconductor devices, for example, which is particularly effective when applied to semiconductor devices mounted with large pellets. It's about technology.
比較的高温度に加熱してペレットを取り付けることがで
きる、たとえばセラミックパッケージからなる半導体装
置においては、ペレットをパッケージ基板のペレット取
付部に金−シリコン共晶を介して接着することが、一般
に行なわれている。For example, in a semiconductor device made of a ceramic package in which a pellet can be attached by heating to a relatively high temperature, the pellet is generally bonded to the pellet attachment part of the package substrate via gold-silicon eutectic. ing.
ところで、シリコンからなるペレットを金−シリ・ン＾
晶で接着する場合・−・・ト裏面と該共晶との接合が接
合面の一部に未接合部が存在するような不完全なものと
なることがある。このような場合、もともとペレットと
金−シリコン共晶とは熱膨張係数が異なるので温度サイ
クルによる応力が接合部と未接合部の境界に集中するこ
とになり、ペレットにクラックが発生する等の不良の原
因になることが本発明者により見℃・出された。By the way, pellets made of silicon are made of gold-silicon.
In the case of bonding with a crystal, the bond between the back surface and the eutectic may be incomplete such that there is a part of the bonded surface that is not bonded. In this case, since the pellet and the gold-silicon eutectic have different coefficients of thermal expansion, stress due to temperature cycles will be concentrated at the boundary between the bonded and unbonded areas, causing defects such as cracks in the pellet. The inventors have found that this can be the cause of.
そして、前記未接合部等の不完全接合部が発生する理由
が、接合面近傍に存在する酸素によりペレット裏面や接
合材中のシリコンが酸化されるために該ペレット裏面が
接合材にぬれにくくなることにあると考え、本発明者が
鋭意研究の末、本発明を完成するに至、ったものである
。The reason why incomplete joints such as the unjoined parts occur is that the back surface of the pellet and the silicon in the bonding material are oxidized by the oxygen present near the bonding surface, making it difficult for the back surface of the pellet to wet the bonding material. The inventors of the present invention have completed the present invention after intensive research.
前記ペレットを基板に取り付ける技術については、たと
えばラジオ技術柱１９７６年発行の［最新・電子デバイ
ス事典」（馬場玄弐著）のＰ２Ｓ５および２５７に示さ
れている。The technique for attaching the pellets to the substrate is shown, for example, in P2S5 and 257 of "Dictionary of Latest Electronic Devices" (authored by Genji Baba) published in 1976 by Radio Technology Pillar.
本発明の目的は、ペレット取付に関し、半導体装置の信
頼性向上に適用して有効な技術を提供することにある。An object of the present invention is to provide an effective technique for improving the reliability of semiconductor devices regarding pellet attachment.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本題において開示される発明の５ち代表的なものの概要
を簡単に説明すれば、次の通りである。A brief summary of the five representative inventions disclosed in this subject is as follows.
すなわち、ペレット取付部とペレット裏面との間に高酸
素親和性金属、金およびシリコンからなる接合材を介在
させ、刃口熱処理してペレットを取り付ける場合パ′・
ト裏面等の′す′の酸化 １を防止できるの
で、該ペレット裏面と接合材とのぬれ性を向上させるこ
とができる。In other words, if a bonding material made of a metal with high oxygen affinity, gold, and silicon is interposed between the pellet attachment part and the back surface of the pellet, and the pellet is attached by heat treatment at the cutting edge, the performance is
Since oxidation 1 of the back surface of the pellet, etc., can be prevented, the wettability between the back surface of the pellet and the bonding material can be improved.
したがって、ペレット裏面と接合材との接合を向上させ
ることができることより、温度サイクルに伴い発生する
応力が集中する接合部と未接合部との界面を減少させる
ことができることより、ペレットクラック等の発生を防
止することができ、前記目的を達成することができる。Therefore, by improving the bond between the back surface of the pellet and the bonding material, it is possible to reduce the interface between the bonded part and the unbonded part, where stress generated due to temperature cycles is concentrated, resulting in the occurrence of pellet cracks, etc. can be prevented, and the above objective can be achieved.
〔実施例１〕
第１図は、本発明による実施例１である半導体装置を、
そのほぼ中心を切る卓における断面図で示したものであ
る。[Example 1] FIG. 1 shows a semiconductor device according to Example 1 of the present invention.
This is a cross-sectional view of the table taken approximately through the center.
本実施例１０半導体装置は、いわゆるピングリッドアレ
イ型半導体装置であって、アルミナまたはシリコンカー
バイド等のセラミックからなる基板１上面のほぼ中央部
のペレット取付部にシリコン（Ｓｉ）からなるペレット
２が接合材３を介して取り付けられ、該ペレット２のポ
ンプイングツ（ラド４とその周囲に形成されているアル
ミニウム等で形成されてなる配線５とがアルミニウム等
のワイヤ６で接続されて電気的に導通され、さらにセラ
ミックからなる断面コ字状のキャップ７が低融点ガラス
８で基板上面に接着され気密封止されてなるものである
。また、基板１裏面には外部端子であるビン９が、基板
１上面の配線５と該基板を貫通して形成されているタン
グステン等からなるスルーホール配線１０を介して電気
的に接着された状態で取り付けられているものである。The present Example 10 semiconductor device is a so-called pin grid array type semiconductor device, in which a pellet 2 made of silicon (Si) is bonded to a pellet mounting portion approximately in the center of the upper surface of a substrate 1 made of ceramic such as alumina or silicon carbide. The pellet 2 is attached via a wire 3, and the pumping rod 4 of the pellet 2 and a wiring 5 made of aluminum or the like formed around it are connected with a wire 6 made of aluminum or the like to be electrically connected, Furthermore, a cap 7 made of ceramic and having a U-shaped cross section is adhered to the top surface of the substrate with a low melting point glass 8 and hermetically sealed.Furthermore, on the back surface of the substrate 1, a vial 9, which is an external terminal, is connected to the top surface of the substrate 1. The wiring 5 is electrically bonded to the wiring 5 through the through-hole wiring 10 made of tungsten or the like and formed through the substrate.
本実施例１０半導体装置は、ペレット２を基板１上面に
取り付けるために接合＃３としアルミニウム、金および
シリコンからなる合金を用いていることに特徴がある。The semiconductor device of Example 10 is characterized in that an alloy consisting of aluminum, gold, and silicon is used as joint #3 to attach the pellet 2 to the upper surface of the substrate 1.
このような接合材３を用いることにより、加熱して接合
材３を溶融せしめてペレット２を接着する場合、極めて
良好な接着を達成できるものである。By using such a bonding material 3, extremely good adhesion can be achieved when the pellets 2 are bonded by heating and melting the bonding material 3.
それは、ペレット２裏面または接合材３中のシリコンが
酸素により酸化を受け、該接合材３とペレット２とのぬ
れ性を低下させる酸化物が形成されることを防止できる
ことにあると考えられる。This is thought to be because the silicon on the back surface of the pellet 2 or in the bonding material 3 is oxidized by oxygen, and oxides that reduce the wettability between the bonding material 3 and the pellet 2 can be prevented from being formed.
すなわち、前記接合材３に含まれているアルミニウムが
、極めて酸素との親和性が高い（ｉ！ｉ！素酸化を受は
易い）性質を有しているため、加熱してぺＶット取付を
行なう際、ペレット接合面に侵入してきた酸素を強力に
かつ速やかに除去してくれるため、前記のようなぬれ性
を阻害するシリコン酸化物の形成を有効に防止できるこ
とにあると考えられるからである。In other words, since the aluminum contained in the bonding material 3 has an extremely high affinity for oxygen (i!i! easily undergoes elementary oxidation), it is difficult to attach it by heating it. This is because it strongly and quickly removes oxygen that has entered the pellet bonding surface when performing this process, and is thought to be able to effectively prevent the formation of silicon oxide that inhibits wettability as described above. be.
前記の如り、アルミニウム、金およびシリコンの三成分
からなる合金を用いてペレット取付を行なうことにより
、いわゆる金−シリコン共晶によるペレット接合に比べ
、さらにぬれ面積を向上せしめた、ほぼ完全なペレット
裏面と接合材との接合を達成することが可能である。As mentioned above, by attaching pellets using an alloy consisting of the three components of aluminum, gold, and silicon, we are able to create almost perfect pellets with a further improved wetting area compared to so-called gold-silicon eutectic pellet bonding. It is possible to achieve a bond between the back surface and the bonding material.
第２図は、本実施例１０半導体装置のペレット取付に使
用する金箔を示すものである。FIG. 2 shows the gold foil used for attaching the pellet of the semiconductor device of Example 10.
本実施例１の半導体装置のペレット取付の方法としては
、第２図に示すような裏面にアルミニウムが被着されて
いる金箔を、図中上方にペレットが位置するように、該
ペレット２とペレット取付部との間に介在せしめた状態
で、たとえば４３０℃に加熱し、必要に応じてペレット
をスクラブすることによりペレット２とペレット取付部
との接合を達成することができるものである。このペレ
ット取付部は、アルミナからなるノくツケージ基板上面
にアルミニウムな被着して形成したものである。As a method for attaching pellets to the semiconductor device of Example 1, as shown in FIG. The pellet 2 and the pellet attachment part can be joined to each other by heating the pellet to, for example, 430° C. and scrubbing the pellet as necessary while it is interposed between the pellet 2 and the attachment part. This pellet mounting portion is formed by adhering aluminum to the upper surface of the saw cage substrate made of alumina.
なお、本実施例１の如く、ペレット２をほぼ均一組成の
合金で接続するためには、前記温度における刀Ω熱時間
を長くすることにより容易に達成することができる。Note that in order to connect the pellets 2 with an alloy having a substantially uniform composition as in Example 1, this can be easily achieved by lengthening the heating time at the above temperature.
第２図（ａ）は、前記ペレット取付に使用する金箔の一
例を示すものである。FIG. 2(a) shows an example of gold foil used for attaching the pellets.
前記金箔１１は、その裏面全体にアルミニウム１２が被
着されてなるものである。The gold foil 11 has aluminum 12 adhered to its entire back surface.
本図（ａｌのようにアルミニウム１２を金箔１１に被着
する方法としては、アルミ箔を機械的にラミネートして
もよく、また蒸着やスパッタリングで被着することもで
きる。As shown in this figure (al), aluminum 12 may be applied to gold foil 11 by mechanically laminating the aluminum foil, or by vapor deposition or sputtering.
第２図（ｂｌは、ペレット２の取付に使用する金箔〕他
の例について示すものである。FIG. 2 (bl is the gold foil used for attaching the pellet 2) shows another example.
本図ｔｂ）における金箔１１は、部分的にアルミニウム
１２が被着されＣなるものであり、前記本図（ａｌに示
すものとほぼ同様にして形成することができる。このよ
うに部分的にアルミニウム１２を被着することにより、
アルミニウム１２の量を自由に調整することができる。The gold foil 11 in this figure tb) is partially coated with aluminum 12 and can be formed in substantially the same manner as that shown in this figure (al). By applying 12,
The amount of aluminum 12 can be adjusted freely.
第２図ｔｅｌは、さらに他の金箔の例を示すものである
。FIG. 2 shows still another example of gold leaf.
本図（Ｃ）に示す金箔１１は、その裏面に一部が埋まっ
た状態でアルミニウム１２０粒状物が被着されてなるも
のである。The gold foil 11 shown in FIG. 1(C) has aluminum 120 particles adhered to the back surface of the gold foil 11 in a partially buried state.
このような金箔１１は、アルミニウム１２の量を自由に
調整できることに加えて、極めて容易に形成することが
できる利点がある。Such gold foil 11 has the advantage of being able to freely adjust the amount of aluminum 12 and being extremely easy to form.
すなわち、所望の大きさのアルミニウム粒子を所望量用
意し、その粒子上にアルミ箔をかぶせて上方より所定の
力を単に加えることによって、容易に第２図（Ｃ１のご
とき形状の金箔を形成することができる。ここで、アル
ミニウム粒子を、その断面がほぼ円形のものについて示
したが、これに限るものでないことは言うまでもブよい
。That is, by preparing a desired amount of aluminum particles of a desired size, covering the particles with aluminum foil, and simply applying a predetermined force from above, gold foil having a shape as shown in Fig. 2 (C1) can be easily formed. Here, the aluminum particles are shown as having a substantially circular cross section, but it goes without saying that the cross section is not limited to this.
（実施例２］
第３図は、本発明による実施例２である半導体装置を、
その部分拡大断面図で示したものである。(Example 2) FIG. 3 shows a semiconductor device according to Example 2 of the present invention.
It is shown in a partially enlarged sectional view.
本実施例２０半導体装董は、前記実施例１０半導体装置
とほぼ同様であり、ペレット２の接合材３のみが相違す
るものである。The semiconductor device of Example 20 is almost the same as the semiconductor device of Example 10, and only the bonding material 3 of the pellet 2 is different.
すなわち、本実施例２の半導体装置における接合材３は
、パッケージ基板１のペレット取付面から順に、アルミ
ニウム層１３．金層１４および金−シリコン共晶層１５
のほぼ３層で形成されてなるものである。That is, the bonding material 3 in the semiconductor device of Example 2 is arranged in order from the pellet attachment surface of the package substrate 1 to the aluminum layer 13 . Gold layer 14 and gold-silicon eutectic layer 15
It is formed of approximately three layers.
図中、接合材３を明確な３層として示したが、必ずしも
これに限るものでなく、金−シリコン共晶層には、ある
程度のアルミニウムが含有されているものであり、金層
についても同様である。Although the bonding material 3 is shown as three distinct layers in the figure, it is not necessarily limited to this; the gold-silicon eutectic layer contains a certain amount of aluminum, and the same applies to the gold layer. It is.
本実施例２の半導体装置は、前記実施例１と同様、第２
図（ａｌに示す金箔を使用して容易に形成することがで
きるものであり、ただ比較的短時間で接合が完了してい
るため、ペレット２裏面では金−シリコン共晶が生成し
て完全な接着が達成されていても、アルミニウムおよび
金層が最初の状態をある程度止めているものである。The semiconductor device of the second embodiment has a second
It can be easily formed using the gold foil shown in Figure (al), but since the bonding is completed in a relatively short time, gold-silicon eutectic is generated on the back side of the pellet 2, resulting in complete bonding. Even if adhesion is achieved, the aluminum and gold layers are what keep the initial state to some extent.
このような段階においても、所定量のアルミニウムが拡
散してペレット裏面近傍圧到達することにより、十分に
シリコンの醇化を防止することができるので、前記実施
例１の半導体装置と同様に□所期の目的を達成できる。Even at this stage, by diffusing a predetermined amount of aluminum and reaching the pressure near the back surface of the pellet, it is possible to sufficiently prevent the silicon from becoming liquefied. can achieve the purpose of
（１）、ペレットを取付面に接合材で取り付けてなる半
導体装置において、ベレーットを高酸素親和性金属、金
およびシリコンからなる接合材で基板上面のペレット取
付部に加熱して取り付けることにより、加熱時にペレッ
ト接合部に酸素が侵入しても接合材に含まれている高酸
素親和性金属が侵入してきた酸素を吸収してくれるので
、ペレット裏面および該接合材中のシリコンが酸化され
ることを有効に防止することができる。(1) In a semiconductor device in which a pellet is attached to a mounting surface with a bonding material, the pellet is heated and attached to the pellet mounting portion on the top surface of the substrate using a bonding material made of a metal with high oxygen affinity, gold, and silicon. Even if oxygen sometimes enters the joints of the pellets, the high oxygen affinity metal contained in the jointing material absorbs the oxygen, preventing the backside of the pellets and the silicon in the jointing material from being oxidized. It can be effectively prevented.
（２）、前記（１）により、シリコンの酸化物の生成を
防止することができるので、ペレットの接合材によるぬ
れ性の低下を防止することができるので、ペレットと接
合材との接合を向上できる。(2) As described in (1) above, it is possible to prevent the formation of silicon oxides, which prevents a decrease in the wettability of the pellets due to the bonding material, thereby improving the bonding between the pellets and the bonding material. can.
（３）、前記（２）により、ペレット裏面と接合材との
不完全接合面を減少させることができるので、完全接合
面と不完全接合面との境界に、温度サイクルによる応力
が集中する事態を防止でき、結果としてペレットクラッ
ク等の発生を防止できる。(3) Due to (2) above, it is possible to reduce the incomplete bonding surface between the back surface of the pellet and the bonding material, so stress due to temperature cycles is concentrated at the boundary between the complete bonding surface and the incomplete bonding surface. As a result, the occurrence of pellet cracks, etc. can be prevented.
（４）、前記（３）により、半導体装置の信頼性を向上
することかできる。(4) According to (3) above, the reliability of the semiconductor device can be improved.
（５）、前記（１）に示すペレット取付を、ペレット裏
面とペレット取付面との間に、裏面に高酸素親和性金属
な被着してなる金箔を介在させることにより、その状態
のまま加熱し、必要に応じてスフ２プを行なうことに容
易に達成することができる。(5) The pellet mounting shown in (1) above is heated in that state by interposing gold foil made of a metal with high oxygen affinity on the back surface between the back surface of the pellet and the pellet mounting surface. However, this can be easily accomplished by performing a step-by-step process if necessary.
（６）、前記（５）における金箔を、高酸素親和性金属
を部分的に被着して形成することにより、高酸素親和性
金属の含有量を調整することができる。(6) By forming the gold foil in the above (5) by partially depositing a high oxygen affinity metal, the content of the high oxygen affinity metal can be adjusted.
（７）、前記（１）の半導体装置において、ほぼ均一な
組成からなる合金からなる接合材でペレット取付面
けることにより、極めて完全なペレットと接合材
１との接合を達成することができる。(7) In the semiconductor device of (1) above, by attaching the pellet with a bonding material made of an alloy having a substantially uniform composition, the pellet and bonding material can be extremely perfect.
1 can be achieved.
（８）、前記（１）の半導体装直において、ペレット取
付面より、高酸素親和性金属、金および金−シリコン共
晶のｔｌぼ３層からなる接合材でペレットを取り付ける
場合、裏面に高酸素親和性金属が被着されている金箔を
使用し、前記（５）の方法により、短時間でペレット取
付を達成することができる。(8) When attaching the pellet directly to the semiconductor device in (1) above from the pellet mounting surface using a bonding material consisting of three layers of high oxygen affinity metal, gold, and gold-silicon eutectic, the back surface has a high By using gold foil coated with an oxygen-affinity metal and using the method (5) above, pellet attachment can be achieved in a short time.
（９）、高酸素親和性金属としてアルミニウムを使用す
ることにより、信頼性の高いペレット取付を安価に達成
することができる。(9) By using aluminum as the high oxygen affinity metal, reliable pellet attachment can be achieved at low cost.
以上本発明者によってなされた発明を実施例に基つき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the Examples described above, and it should be noted that various changes can be made without departing from the gist of the invention. Not even.
たとえば、実施例１においてはペレットをアルミニウム
を裏面に被着してなる金箔を使用して取り付ける例を示
したが、これに限るものでなく、予め金とアルミニウム
との合金またはアルミニウム、金およびシリコンからな
る合金で形成された箔を使用しても良いことは言うまで
もない。For example, in Example 1, an example was shown in which the pellets were attached using gold foil made by coating aluminum on the back side, but the present invention is not limited to this. Needless to say, a foil made of an alloy consisting of the following may be used.
また、実施例２では、接合材の最下層が連続した形状の
アルミニウム層であるものについて示したが、第２図（
ｂ）またはｔｃ＞に示す金箔を使用して形成される、断
続形状のアルミニウム層からなるものであってもよい。In addition, in Example 2, the bottom layer of the bonding material was a continuous aluminum layer, but as shown in FIG.
It may also consist of an interrupted aluminum layer formed using gold foil as shown in b) or tc>.
さらに、前記゛実施例においては、接合材が合金を形成
しているもの、およびｔｌぼ３層構造を形成しているも
のについて説明したが、これに限るものでなく、全体と
してアルミニウム、金およびシリコンを成分金属として
形成され、同一目的を達成せんとするものであれば接合
材の内部構造は必ずしも問わないものであることは言う
までもない。Furthermore, in the above embodiments, explanations have been given of cases in which the bonding materials form an alloy and cases in which the bonding materials form a three-layer structure, but the present invention is not limited to this. It goes without saying that the internal structure of the bonding material does not necessarily matter as long as it is formed using silicon as a component metal and aims to achieve the same purpose.
なお、前記実施例に、おいては、高酸素親和性金属とし
てアルミニウムについてのみ説明したが、チタンまたは
マグネシウム等の他の同性質を備えた金属を使用しても
良いことは言うまでもない。In the above embodiments, only aluminum was described as the high oxygen affinity metal, but it goes without saying that other metals having the same properties, such as titanium or magnesium, may also be used.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるセラミックパッケー
ジからなるビングリッドアレイ型半導体装置に適用した
場合について説明したが、それに限定されるものではな
（、たとえば、通常金−シリコン共晶等でろう付けして
ペレットを取り付けてなる半導体装置であればいかなる
ものについても適用できるものである。In the above description, the invention made by the present inventor was mainly applied to a bin grid array type semiconductor device comprising a ceramic package, which is the field of application in which the invention was made, but the invention is not limited to this. For example, the present invention can be applied to any semiconductor device in which pellets are usually attached by brazing with gold-silicon eutectic or the like.
第１図は、本発明による実施例］である半導体装置を示
す断面図、
第２図（ａｌは、本実施例１０半導体装置のペレット取
付に使用する金箔の一つを示す断面図、第２図（ｂｌは
、他の金箔を示す断面図、第２図（Ｃ１は、さらに他の
金箔を示す断面図、第３図は、本発明による実施例２で
ある半導体装置を示す、拡大部分断面図である。
１・・・基板、２・・・ぺＶット、３・・・接合材、４
・・・ボンディングバンド、５・・・配線、６・・・ワ
イヤ、７・・・キャップ、８・・・低融点ガラス、９・
・・ピン、１０・・・スルーホール配線、１１・・・金
箔、１２・・・アルミニウム、１３・・・アルミニウム
層、１４・・・金層、１５・・・金−シリコン共晶層。
代理人 弁理士 高 橋 明 失
策 １ 図FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention; FIG. Figures (bl is a cross-sectional view showing another gold foil, Figure 2 (C1 is a cross-sectional view showing still another gold foil, and Figure 3 is an enlarged partial cross-section showing a semiconductor device as Example 2 of the present invention) 1 is a diagram. 1... Substrate, 2... PVC, 3... Bonding material, 4
...Bonding band, 5...Wiring, 6...Wire, 7...Cap, 8...Low melting point glass, 9...
... Pin, 10 ... Through-hole wiring, 11 ... Gold foil, 12 ... Aluminum, 13 ... Aluminum layer, 14 ... Gold layer, 15 ... Gold-silicon eutectic layer. Agent Patent Attorney Akira Takahashi Mistake 1 Diagram
Claims (1)
装置において、ペレットが高酸素親和性金属、金および
シリコンからなる接合材で取り付けられていることを特
徴とする半導体装置。 ２、接合材が高酸素親和性金属、金およびシリコンの合
金であることを特徴とする特許請求の範囲第１項記載の
半導体装置。 ３、接合材が、ほぼ高酸素親和性金属、金および金−シ
リコン共晶の３層で形成されていることを特徴とする特
許請求の範囲第１項記載の半導体装置。 ４、高酸素親和性金属が、アルミニウム、マグネシウム
またはチタンであることを特徴とする特許請求の範囲第
１項、第２項または第３項のいずれかに記載の半導体装
置。 ５、ペレットが高酸素親和性金属、金およびシリコンか
らなる接合材で取り付けられている半導体装置の製造方
法であって、パッケージ基板のペレット取付面とペレッ
ト裏面との間に、高酸素親和性金属と金とからなる箔を
介在させ、加熱処理を行うことを特徴とする半導体装置
の製造方法。 ６、高酸素親和性金属が金箔の片面全体に被着されてい
ることを特徴とする特許請求の範囲第５項記載の半導体
装置の製造方法。 ７、高酸素親和性金属が金箔の片面に部分的に被着され
ていることを特徴とする特許請求の範囲第５項記載の半
導体装置の製造方法。 ８、高酸素親和性金属がアルミニウム、マグネシウムま
たはチタンであることを特徴とする特許請求の範囲第５
項、第６項または第７項のいずれかに記載の半導体装置
。[Claims] 1. A semiconductor device in which a pellet is attached to a mounting surface with a bonding material, characterized in that the pellet is attached with a bonding material made of a metal with high oxygen affinity, gold, and silicon. . 2. The semiconductor device according to claim 1, wherein the bonding material is an alloy of a metal with high oxygen affinity, gold, and silicon. 3. The semiconductor device according to claim 1, wherein the bonding material is formed of three layers of a metal with high oxygen affinity, gold, and gold-silicon eutectic. 4. The semiconductor device according to claim 1, 2, or 3, wherein the metal with high oxygen affinity is aluminum, magnesium, or titanium. 5. A method for manufacturing a semiconductor device in which a pellet is attached with a bonding material made of a metal with high oxygen affinity, gold, and silicon, wherein the metal with high oxygen affinity is attached between the pellet mounting surface of the package substrate and the back surface of the pellet. 1. A method for manufacturing a semiconductor device, characterized in that heat treatment is performed with a foil made of gold and gold interposed therebetween. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the metal with high oxygen affinity is coated on the entire surface of the gold foil. 7. The method of manufacturing a semiconductor device according to claim 5, wherein the metal with high oxygen affinity is partially deposited on one side of the gold foil. 8. Claim 5, characterized in that the metal with high oxygen affinity is aluminum, magnesium, or titanium.
6. The semiconductor device according to any one of Items 6 and 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59125241A JPS615532A (en) | 1984-06-20 | 1984-06-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59125241A JPS615532A (en) | 1984-06-20 | 1984-06-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS615532A true JPS615532A (en) | 1986-01-11 |
Family
ID=14905277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59125241A Pending JPS615532A (en) | 1984-06-20 | 1984-06-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS615532A (en) |
-
1984
- 1984-06-20 JP JP59125241A patent/JPS615532A/en active Pending
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