JPS6155258A - 脱水装置 - Google Patents

脱水装置

Info

Publication number
JPS6155258A
JPS6155258A JP59178784A JP17878484A JPS6155258A JP S6155258 A JPS6155258 A JP S6155258A JP 59178784 A JP59178784 A JP 59178784A JP 17878484 A JP17878484 A JP 17878484A JP S6155258 A JPS6155258 A JP S6155258A
Authority
JP
Japan
Prior art keywords
frame
dehydrated
hydraulic
dewatering device
cylinder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59178784A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0366920B2 (enrdf_load_stackoverflow
Inventor
右田　雄一郎
八木　昭
曽我部　英男
修 山崎
大坂　正明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Duskin Franchise Co Ltd
Original Assignee
Duskin Franchise Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Duskin Franchise Co Ltd filed Critical Duskin Franchise Co Ltd
Priority to JP59178784A priority Critical patent/JPS6155258A/ja
Publication of JPS6155258A publication Critical patent/JPS6155258A/ja
Publication of JPH0366920B2 publication Critical patent/JPH0366920B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Treatment Of Fiber Materials (AREA)
  • Accessory Of Washing/Drying Machine, Commercial Washing/Drying Machine, Other Washing/Drying Machine (AREA)
JP59178784A 1984-08-27 1984-08-27 脱水装置 Granted JPS6155258A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59178784A JPS6155258A (ja) 1984-08-27 1984-08-27 脱水装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59178784A JPS6155258A (ja) 1984-08-27 1984-08-27 脱水装置

Publications (2)

Publication Number Publication Date
JPS6155258A true JPS6155258A (ja) 1986-03-19
JPH0366920B2 JPH0366920B2 (enrdf_load_stackoverflow) 1991-10-21

Family

ID=16054575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59178784A Granted JPS6155258A (ja) 1984-08-27 1984-08-27 脱水装置

Country Status (1)

Country Link
JP (1) JPS6155258A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4931897A (en) * 1989-08-07 1990-06-05 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor capacitive element
US5225704A (en) * 1988-07-08 1993-07-06 Mitsubishi Denki Kabushiki Kaisha Field shield isolation structure for semiconductor memory device and method for manufacturing the same
US5247197A (en) * 1987-11-05 1993-09-21 Fujitsu Limited Dynamic random access memory device having improved contact hole structures
US5250458A (en) * 1987-02-25 1993-10-05 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing semiconductor memory device having stacked memory capacitors
US5258321A (en) * 1988-01-14 1993-11-02 Mitsubishi Denki Kabushiki Kaisha Manufacturing method for semiconductor memory device having stacked trench capacitors and improved intercell isolation
US5280444A (en) * 1991-04-01 1994-01-18 Mitsubishi Denki Kabushiki Kaisha Dram comprising stacked-type capacitor having vertically protruding part and method of manufacturing the same
US5359216A (en) * 1983-02-23 1994-10-25 Texas Instruments Incorporated DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
US5374576A (en) * 1988-12-21 1994-12-20 Hitachi, Ltd. Method of fabricating stacked capacitor cell memory devices
US5427972A (en) * 1987-02-13 1995-06-27 Mitsubishi Denki Kabushiki Kaisha Method of making a sidewall contact
US5455205A (en) * 1992-03-25 1995-10-03 Matsushita Electric Industrial Co., Ltd. Method of producing semiconductor device
US6031262A (en) * 1996-11-14 2000-02-29 Nec Corporation Semiconductor memory device having capacitor-over-bitline cell with multiple cylindrical storage electrode offset from node contact and process of fabrication thereof
US6878586B2 (en) 1988-01-08 2005-04-12 Renesas Technology Corp. Semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5050764A (enrdf_load_stackoverflow) * 1973-08-30 1975-05-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5050764A (enrdf_load_stackoverflow) * 1973-08-30 1975-05-07

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5359216A (en) * 1983-02-23 1994-10-25 Texas Instruments Incorporated DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
US5427972A (en) * 1987-02-13 1995-06-27 Mitsubishi Denki Kabushiki Kaisha Method of making a sidewall contact
US5250458A (en) * 1987-02-25 1993-10-05 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing semiconductor memory device having stacked memory capacitors
US5247197A (en) * 1987-11-05 1993-09-21 Fujitsu Limited Dynamic random access memory device having improved contact hole structures
US5405798A (en) * 1987-11-05 1995-04-11 Fujitsu Limited Method of producing a dynamic random access memory device having improved contact hole structures
US6878586B2 (en) 1988-01-08 2005-04-12 Renesas Technology Corp. Semiconductor memory device
US5258321A (en) * 1988-01-14 1993-11-02 Mitsubishi Denki Kabushiki Kaisha Manufacturing method for semiconductor memory device having stacked trench capacitors and improved intercell isolation
US5225704A (en) * 1988-07-08 1993-07-06 Mitsubishi Denki Kabushiki Kaisha Field shield isolation structure for semiconductor memory device and method for manufacturing the same
US5374576A (en) * 1988-12-21 1994-12-20 Hitachi, Ltd. Method of fabricating stacked capacitor cell memory devices
US4931897A (en) * 1989-08-07 1990-06-05 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor capacitive element
US5280444A (en) * 1991-04-01 1994-01-18 Mitsubishi Denki Kabushiki Kaisha Dram comprising stacked-type capacitor having vertically protruding part and method of manufacturing the same
US5393688A (en) * 1991-04-01 1995-02-28 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a stacked capacitor DRAM
US5455205A (en) * 1992-03-25 1995-10-03 Matsushita Electric Industrial Co., Ltd. Method of producing semiconductor device
US5584964A (en) * 1992-03-25 1996-12-17 Matsushita Electric Industrial Co., Ltd. Method of producing semiconductor device with viscous flow of silicon oxide
US6031262A (en) * 1996-11-14 2000-02-29 Nec Corporation Semiconductor memory device having capacitor-over-bitline cell with multiple cylindrical storage electrode offset from node contact and process of fabrication thereof

Also Published As

Publication number Publication date
JPH0366920B2 (enrdf_load_stackoverflow) 1991-10-21

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term