JPS6154271B2 - - Google Patents
Info
- Publication number
- JPS6154271B2 JPS6154271B2 JP4421680A JP4421680A JPS6154271B2 JP S6154271 B2 JPS6154271 B2 JP S6154271B2 JP 4421680 A JP4421680 A JP 4421680A JP 4421680 A JP4421680 A JP 4421680A JP S6154271 B2 JPS6154271 B2 JP S6154271B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance value
- diaphragm
- gauge
- pressure
- gauge resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4421680A JPS56140670A (en) | 1980-04-04 | 1980-04-04 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4421680A JPS56140670A (en) | 1980-04-04 | 1980-04-04 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56140670A JPS56140670A (en) | 1981-11-04 |
| JPS6154271B2 true JPS6154271B2 (fr) | 1986-11-21 |
Family
ID=12685341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4421680A Granted JPS56140670A (en) | 1980-04-04 | 1980-04-04 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56140670A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0535335Y2 (fr) * | 1986-02-21 | 1993-09-08 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0750789B2 (ja) * | 1986-07-18 | 1995-05-31 | 日産自動車株式会社 | 半導体圧力変換装置の製造方法 |
-
1980
- 1980-04-04 JP JP4421680A patent/JPS56140670A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0535335Y2 (fr) * | 1986-02-21 | 1993-09-08 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56140670A (en) | 1981-11-04 |
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