JPS6154214B2 - - Google Patents

Info

Publication number
JPS6154214B2
JPS6154214B2 JP17470680A JP17470680A JPS6154214B2 JP S6154214 B2 JPS6154214 B2 JP S6154214B2 JP 17470680 A JP17470680 A JP 17470680A JP 17470680 A JP17470680 A JP 17470680A JP S6154214 B2 JPS6154214 B2 JP S6154214B2
Authority
JP
Japan
Prior art keywords
mask
see
resist
ultraviolet
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17470680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5799643A (en
Inventor
Kyoshi Ozawa
Nobuyoshi Takagi
Satoru Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17470680A priority Critical patent/JPS5799643A/ja
Publication of JPS5799643A publication Critical patent/JPS5799643A/ja
Publication of JPS6154214B2 publication Critical patent/JPS6154214B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP17470680A 1980-12-12 1980-12-12 Seethrough mask Granted JPS5799643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17470680A JPS5799643A (en) 1980-12-12 1980-12-12 Seethrough mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17470680A JPS5799643A (en) 1980-12-12 1980-12-12 Seethrough mask

Publications (2)

Publication Number Publication Date
JPS5799643A JPS5799643A (en) 1982-06-21
JPS6154214B2 true JPS6154214B2 (ko) 1986-11-21

Family

ID=15983230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17470680A Granted JPS5799643A (en) 1980-12-12 1980-12-12 Seethrough mask

Country Status (1)

Country Link
JP (1) JPS5799643A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928156A (ja) * 1982-12-29 1984-02-14 Konishiroku Photo Ind Co Ltd 露光マスクの製造方法
FR2589593A1 (fr) * 1985-08-09 1987-05-07 Pichot Michel Masque de lithographie, procede de fabrication de ce masque et procede de fabrication d'un circuit integre a l'aide dudit masque
FR2606210B1 (fr) * 1986-10-30 1989-04-07 Devine Roderick Procede de fabrication d'un masque de photolithogravure et masque obtenu
CN100396945C (zh) * 2002-02-28 2008-06-25 富士通株式会社 动压轴承的制造方法、动压轴承及动压轴承制造装置

Also Published As

Publication number Publication date
JPS5799643A (en) 1982-06-21

Similar Documents

Publication Publication Date Title
CN1862377A (zh) 相位偏移光掩模坯料、相位偏移光掩模及其制造方法
TW366367B (en) Sputter deposition of hydrogenated amorphous carbon film
ATE27186T1 (de) Verfahren zur herstellung von amorphen halbleitenden legierungen und von anordnungen mittels mikrowellenenergie.
EP0020776A4 (en) METHOD OF FORMING PATTERNS.
JPH05136062A (ja) 多結晶シリコン薄膜およびその低温形成法
JPS6154214B2 (ko)
CN102453862A (zh) 溅射用靶材、含硅膜的形成方法和光掩模坯
CN114545725B (zh) 利用碳纳米管薄膜作掩模版光罩的制备方法
JPS5545019A (en) Production of photo mask
JPS56142680A (en) Photoconductive semiconductor device
JPS5471987A (en) Production of photo mask
JPS57208514A (en) Manufacture of diffraction grating
JP3668292B2 (ja) パターン形成方法およびパターン形成装置
JPS5826018B2 (ja) イオンプレ−テイング法による着色透明フオトマスクブランク材の作成方法
JPS57147634A (en) Photomask blank
JPS6473720A (en) Manufacture of mask for x-ray exposure
JPH035339A (ja) 紫外線透過用石英ガラス
JPH0548464B2 (ko)
JPH0515252B2 (ko)
JPS5637629A (en) Formation of thin film pattern
JPS57109952A (en) Production of photomask plate
JPS6468730A (en) Manufacture of thin film transistor
JPS55163539A (en) Photo mask
JPH0277165A (ja) 薄膜トランジスタの製造方法
JP2966909B2 (ja) 非晶質半導体薄膜