JPS6153743A - Metal wiring of semiconductor device - Google Patents

Abstract

PURPOSE:To weaken stress generated in the wiring itself and prevent disconnection by stress by setting length of straight part of wiring to 500mum or less in case the width is 3mum or less and providing a stress alleviating part. CONSTITUTION:Width of aluminum wirings 1A, 1B is 3mum or less and the electrode portions 2A, 2B being in contact with the predetermined region of semiconductor substrate are connected to a bus 3. In case distance of such electrodes 2A, 2B is 500mum or longer, the extending portions 4A, 4D are provided at the regions where the distance becomes 500mum or less. The width of such extending portions 4A-4D are 5mum or wider and length is 5mum or longer, and these are formed when the wirings 1A, 1B are formed. This extending portions 4A-4D weakens stress generated in the wirings 1A, 1B and disconnection of wirings 1A, 1B due to the stress can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor device, and more particularly to metal wiring for a semiconductor device.

In semiconductor devices, which are integrated circuits such as ICs and LSIs, a large number of active elements (transistors, diodes) and passive elements (resistors, capacitors) are formed on a semiconductor substrate (e.g., a silicon substrate), and these elements are made of metal. They are connected by wiring to form a predetermined circuit.

Problems to be Solved by the Prior Art and the Invention The width of such metal wiring (particularly aluminum memory) is becoming narrower as the integration becomes higher, and wires with a width of 3 μm or less are being formed. It has become.

Such thin wiring may have a straight section of 500 ltm or more as an M line and be run for a predetermined connection.

In such cases, stress (particularly tensile stress) is generated on the wiring itself even when aluminum wiring is formed, and heat treatment in post-processes (e.g., heating when forming a passi-pecimin film, heating when sealing a casing), etc. As a result, the stress becomes large, sometimes leading to cutting along the interface or slip plane of the aluminum crystal.

Means for Solving the Problems The present invention provides a wiring for a semiconductor device that solves the above-mentioned problems, and the metal wiring of the semiconductor device has a wiring width of 3 μm or less and a straight line length of 500 μm or more. This problem can be prevented by metal wiring of a semiconductor device, which is characterized by providing a stress-reducing portion in the middle of the metal wiring where this occurs.

The stress relief part in the working metal wiring is (1) 185μm
(2) z
Shaped portions or (3) connecting portions in a multilayer wiring structure, first, by making the length of the straight portion 500/nn or less, and by the presence of these portions, the stress of the wiring itself can be weakened. .

Embodiment 11 The present invention will now be described in more detail by way of preferred embodiments of the present invention with reference to the accompanying drawings.

1, 2, and 3 are schematic plan views of a semiconductor device having metal wiring according to the present invention.

In Figure 1, the aluminum arrangement I? :'JIA
and IB has a width of 31 rrrL or less and is in contact with a predetermined region of the semiconductor (silicon) substrate; 'FJ';
The IiE sections (for example, emitter lightning poles) 2A and 2B are connected to a bus bar (for example, an emitter supply power line) 3.

Conventionally, wiring would be provided to connect the electrode portions 2A, 2B and the bus bar 3 in a similar manner, but the distance would be 500 -
In this case, according to the present invention, the extended portion 4A
, 4B, 4C and 4D are provided within 500μ. Each of these extensions is 51rnL wide.
It has a length of 5 .mu.m or more, is a part of the aluminum arrangement 191A, II3, and is formed according to a normal process only by appropriately changing the four turns of the etching mask during wiring formation. In FIG. 1, extensions are provided at two locations along the +1 line of the wiring, but they may be provided at one or three or more locations depending on the required distance of the wiring. In addition, the aluminum wiring in the unknown 1t (II contribution) is atsubenium or its alloy (At
-8L, At-Cu).

The aluminum wiring 21A, 21B shown in FIG. 2, which is another embodiment of the present invention, has a two-shaped portion 24A in the middle thereof.
, 24B, 24C and 24D. These wirings 21A and 21B have a width of 3 μm or less, and the electrode portion 22A
, 22B to the bus bar 3 is 500 μm or more, and two shaped portions (bent portions) 24A to 24D having the same wiring width are provided so that the straight line portion of the wire is not longer than 500 μm.

It is also difficult to make the expanded portions 4A and 4D in FIG. 1 into two-shaped portions.

In yet another embodiment, the aluminum interconnects 31A and 31B shown in FIG. 3 utilize a multilayer interconnect structure, with an upper aluminum interconnect portion 35A.

35B, 37A, 37B and lower aluminum wiring portions 36A, 30B, 38A, 38B.

And connection parts 39A, 39B, 39C, 39D of the upper 'Qll+ and lower aluminum wiring parts.

39F and 39F are formed in contact holes formed in an interlayer insulating film (not shown). Also in this case, the width of each of the aluminum wiring portions 35A, 35B to 38A, 38B is 31t7n or less, and the length is 500mm.
It is less than μm.

Effects of the Invention As mentioned above, in the metal (aluminum) wiring of the semiconductor device according to the present invention, when the width is 3 μm or less, the length of the straight portion is set to within 500 μm and the stress relief portion is provided, so that the wire itself The stress generated in the process is weakened and stress-induced cuts can be prevented. This will extend the average lifespan of the semiconductor device.

[Brief explanation of drawings]

1, 2, and 3 are partial schematic sectional views of a semiconductor device having metal wiring according to the present invention. IA, IB, 21A, 21B... 4A. 4B, 4C, 4D...Extended portion, 24A, 24B. 24C, 24D-Z shape part, 35A, 37A (35B
, 37B)...Top (ti!l aluminum wiring part,
36A, 38A (36B, 38B)...lower aluminum self 113 part.

Claims (1)

[Scope of Claims] 1. A semiconductor device characterized in that, in the metal wiring of the semiconductor device, a stress relief part is provided in the middle of the metal wiring where the wiring width is 3 μm or less and the straight line length is 500 μm or more. metal wiring. 2. The wiring according to claim 1, wherein the metal wiring is made of aluminum or an alloy thereof. 3. The wiring according to claim 1 or 2, wherein the stress relief portion is an extended portion having a width of 5 μm or more and a length of 5 μm or more. 4. The wiring according to claim 1 or 2, wherein the stress relief portion is a Z-shaped portion. 5. The wiring according to claim 1 or 2, wherein the stress relief part is a connection part in a multilayer wiring structure.