JPH06196478A - Semiconductor device - Google Patents

Abstract

PURPOSE:To protect an aluminum wiring against deformation and positional deviation by a method wherein stress produced due to a thermal expansion difference between the layers of a semiconductor chip or stress generated due to a thermal expansion difference between a resin molded body and a semiconductor chip is smoothly dispersed. CONSTITUTION:Semicircular or polygonal (pentagonal or above) slits 22 are alternately provided to both the peripheral edges of a power supply wiring 21 of aluminum thin film. On a semiconductor substrate, and the power supply wiring 21 is increased in width by the diameter or height of the slit 22.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device which prevents metal wiring cracks due to deformation and displacement of a passivation crack in a power wiring portion formed of an aluminum thin film on a semiconductor substrate and a metal wiring slide.

[0002]

2. Description of the Related Art Usually, power supply wiring (power supply line) made of an aluminum thin film is arranged at the peripheral portion of a semiconductor integrated circuit such as an IC or LSI. This power supply wiring portion is generally formed by depositing on the interlayer insulating film of the semiconductor element formed on the semiconductor substrate and connecting the electrodes of the semiconductor element. Then, the semiconductor substrate on which the power supply wiring portion is formed is covered with an insulating film such as phosphorus silicate glass (PSG) to form a protective film (passivation).
Then, a semiconductor integrated circuit was obtained by further sealing it with a resin molding.

In the conventional semiconductor device manufactured and constructed as described above, the internal stress caused by the difference in the coefficient of thermal expansion between the interlayer insulating film, the aluminum thin film, and the protective film causes internal stress, especially around the semiconductor chip. There has been a problem that the power supply wiring located in the area causes a passivation crack or a metal wiring crack on the semiconductor substrate, which causes a short circuit or disconnection of the power supply wiring.

Further, in a semiconductor integrated circuit having a large semiconductor chip size of more than 5 mm such as a recent linear IC, the same as described above may be caused by an external stress due to a difference in coefficient of thermal expansion between the resin molding and the semiconductor chip. There was a problem that short circuit and disconnection of the power supply wiring were caused.

In order to solve this problem, some wiring structures provided with a means for preventing a metal wiring crack due to deformation / positional shift of a conventional semiconductor device such as a passivation crack or a metal wiring slide are proposed. Became. For example, in a semiconductor device described in Japanese Patent Application Laid-Open No. 62-45150, "Semiconductor Device", rectangular slits are formed in a power supply wire made of an aluminum thin film provided at four corners of a semiconductor substrate or at peripheral portions near the four corners. It is formed so as to prevent cracks generated in the power supply wiring due to stress caused by the difference in coefficient of thermal expansion between the resin molded body and the semiconductor chip.

FIG. 4 is a plan view of the semiconductor device disclosed in Japanese Unexamined Patent Publication No. 62-45150, showing a pattern of aluminum wiring at the corners (points A at the four corners) of the semiconductor chip. In the figure, JP-A-62-4
In the plan view of the semiconductor device proposed by Japanese Patent No. 5150, a semiconductor chip 11, aluminum wirings 12 formed at corners, rectangular slits 13 provided in the aluminum wirings 12, and bonding pad portions made of aluminum are shown. 14 and a part 15 of the wiring provided inside the semiconductor chip. Then, in this semiconductor device, in the aluminum wiring pattern at the four corners, rectangular slits are provided as thermal stress absorbing means to disperse the stress based on the difference in the coefficient of thermal expansion between the resin molded body and the semiconductor chip. Prevents aluminum wiring from cracking.

Further, in the semiconductor device described in Japanese Unexamined Patent Publication No. 4-94540, "Semiconductor Device", the rectangular slit used in the semiconductor device is replaced with a punching pattern of characters and figures as shown in FIG. By providing the slits in the peripheral portion of the semiconductor chip, passivation cracks and metal wiring cracks caused by stress due to the difference in coefficient of thermal expansion between the resin molded body and the semiconductor chip are prevented.

[0008]

As described above, in the conventional semiconductor device, a rectangular slit is provided in the aluminum wiring at the corner portion of the semiconductor chip, or a slit is formed by a punching pattern of characters or figures.
Although passivation cracks and metal wiring cracks are prevented, stress is concentrated at the four corners of the rectangular slit, and stress is concentrated at each corner of the letter or figure, in the slit formed by punching patterns of letters and figures. However, there is a problem in that deformation and misalignment occur and cracks occur.

The present invention has been made to solve the above problems, and internal stress generated by the difference in the coefficient of thermal expansion of each layer of a semiconductor chip and the coefficient of thermal expansion between a resin molding and a semiconductor chip. It is an object of the present invention to obtain a semiconductor device that smoothly disperses external stress generated based on the difference between (1) and (2) and prevents cracks due to deformation / positional shift occurring in power supply wiring such as aluminum wiring.

[0010]

In order to achieve the above object, a semiconductor device according to a first invention of the present invention is characterized in that a power supply wiring connecting electrodes of a semiconductor element formed on a semiconductor substrate is provided on the substrate. In the semiconductor device arranged in the above paragraph, semicircular slits or polygonal slits having five or more sides are arranged on both edges of the power supply wiring portion on the semiconductor substrate.

The semiconductor device according to the second aspect of the invention is characterized in that semicircular slits or polygonal slits with five or more sides are alternately arranged on both edges of the power supply wiring portion on the semiconductor substrate. And

In the semiconductor device according to the third invention, semicircular or pentagonal or more polygonal slits are alternately arranged on both edges of the power supply wiring portion on the semiconductor substrate, and It is characterized in that the width of the power supply wiring portion is expanded by the radius or height of a semicircular or polygonal slit having five or more sides.

The semiconductor device according to a fourth aspect of the present invention is a semiconductor device having a circular shape or a circular shape at the four corners of the power supply wiring on the semiconductor substrate.
It is characterized by arranging polygonal slits with corners or more.

The semiconductor device according to a fifth aspect of the present invention is a semiconductor device having a circular shape or a circular shape at four corners of the power supply wiring on the semiconductor substrate.
It is characterized in that polygonal slits having corners or more are arranged in two rows, and the respective slits are arranged alternately.

Further, a semiconductor device according to the sixth invention is
Circular or polygonal slits with five or more sides are arranged in two rows at four corners of the power wiring on the semiconductor substrate, and the slits are arranged alternately.
It is characterized in that the widths of the four corners of the power supply wiring are expanded by the diameter or height of the circular or polygonal slit having five or more sides.

[0016]

Therefore, according to the semiconductor device of the present invention, the slits provided in the power supply wiring are arranged in a semicircular shape or a polygonal shape with five or more sides on both edges of the power supply wiring portion on the semiconductor substrate. Stress is not concentrated in the four corners like a rectangular slit, and cracks do not occur at the four corners due to deformation and displacement, and the stress is smoothly dispersed, effectively eliminating short circuit and disconnection of power wiring. It can be prevented.

Further, according to the semiconductor device of the present invention, the slits provided in the power supply wiring are alternately arranged in a semicircular shape or a polygonal shape with five or more sides on both peripheral edges of the power supply wiring portion on the semiconductor substrate. And the semicircular shape or 5
Since the width of the power supply wiring part is expanded by the radius or height of the polygonal slits with corners or more, the resistance value of the power supply wiring does not increase due to the provision of the slits, and the stress is distributed smoothly so that the power supply wiring can be distributed. It is possible to effectively prevent short circuit and disconnection failure.

Further, according to the semiconductor device of the present invention, in the corner portion of the power supply wiring which can be constructed relatively wide, the slits provided in the power supply wiring are alternately arranged in a circular shape or a polygonal shape with five or more sides, and Since the width of the corner portion of the power supply wiring is expanded by the diameter or height of the circular or polygonal slit having five or more sides, the resistance value of the power supply wiring is not increased by providing the slit, and the stress is applied. Smooth distribution and short circuit of power supply wiring,
Cutting failure can be effectively prevented.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing a pattern of aluminum wiring in a corner portion (four corner portions) of a semiconductor chip of a first semiconductor device according to this embodiment.

In the figure, a semicircular slit 22 is provided in the aluminum wiring 21 of the semiconductor device of this embodiment. As is clear from the figure, the semicircular slits 22 are alternately arranged on both peripheral edges of the aluminum wiring 21 in a so-called "chidori" shape. In the semiconductor device of the present embodiment, the slits are arranged in a "chidori" shape in this way, as a result of pursuing a shape in which the increase of the resistance value due to the slit of the aluminum wiring is small and the stress can be dispersed most smoothly. Is.

Therefore, in the semiconductor device of this embodiment, the semicircular slits are provided in the power supply wiring portion as the thermal stress absorbing means, so that the thermal expansion of each of the interlayer insulating film, the aluminum thin film, and the protective film. The stress due to the difference in the rate,
Even if stress is applied due to the difference in the coefficient of thermal expansion between the resin molded body and the semiconductor chip, the stress is not concentrated in the four corners like a rectangular slit, and there is no deformation or displacement in the four corners. As shown in Fig. 2, the internal and external stresses can be dispersed smoothly, so short-circuiting of the power supply wiring,
It is possible to effectively prevent cutting failure. Note that FIG.
Is a semicircular slit 22 of the first semiconductor device described above.
It is a conceptual diagram which shows the dispersion | distribution state of the stress by.

FIG. 3 is a plan view showing a pattern of aluminum wiring at the corners (four corners) of the semiconductor chip of the second semiconductor device according to this embodiment. In the figure, the aluminum wiring 23 of the second semiconductor device is
The circular slit 24 is provided in consideration of the feature that the power supply wiring can be configured relatively widely in the corner portion. Then, like the semicircular slit 22, the circular slits 24 are arranged in two rows in the central portion of the aluminum wiring 23, and the respective slits are alternately arranged, as is clear from the figure. .

Therefore, also in the second semiconductor device of this embodiment, a circular slit is provided in the power supply wiring portion as a thermal stress absorbing means, so that the first semiconductor device can be manufactured in the same manner as the first semiconductor device.
Even if stress due to the difference in coefficient of thermal expansion between the interlayer insulating film, aluminum thin film and protective film, or stress due to the difference in coefficient of thermal expansion between the resin molding and the semiconductor chip is applied, the rectangular slit The stress is not concentrated at the four corners as in the above, and the deformation and displacement of the four corners does not occur, and the internal and external stresses can be dispersed smoothly, effectively preventing short circuit and disconnection of the power supply wiring. can do.

In the above embodiment, the slit provided in the power supply wiring is described as a circular shape or a semicircular shape, but the same effect can be expected by using a polygonal slit having five or more sides.

When the slits are arranged in the aluminum wiring as described above, the resistance value of the aluminum wiring is increased by the diameter or radius of the circular or semicircular slit. Therefore, in order to prevent the resistance value of the aluminum wiring from increasing due to this slit, it is conceivable to expand the width of the aluminum wiring by the diameter or radius of the circular or semicircular slit. In another semiconductor device (not shown) of this embodiment, the width of the power supply wiring portion is expanded by the radius, diameter or height of the slit having a semicircular shape, a circular shape, or a polygonal shape having five or more sides. There is no increase in the resistance value of the power supply wiring due to the provision of the
Cutting failure can be effectively prevented.

[0026]

As described above, according to the semiconductor device of the present invention, the slits provided in the power supply wiring are arranged in a semicircular shape or a polygonal shape with five or more sides on both peripheral edges of the power supply wiring portion. With this configuration, the stress can be smoothly dispersed to prevent passivation cracks and metal wiring cracks, and it is possible to effectively prevent short circuit and disconnection of the power supply wiring.

Further, according to the semiconductor device of the present invention, the slits provided in the power supply wiring are alternately arranged in a semicircular shape or a polygonal shape with five or more sides on both peripheral edges of the power supply wiring portion on the semiconductor substrate. And the semicircular shape or 5
Since the width of the power supply wiring portion is expanded by the radius or height of the polygonal slit having a corner or more, the resistance value of the power supply wiring does not increase due to the provision of the slit.
This has the effect of smoothly distributing the stress and effectively preventing short-circuiting and disconnection of the power supply wiring.

Further, according to the semiconductor device of the present invention, in the corner portion of the power supply wiring which can be constructed relatively wide, the slits provided in the power supply wiring are arranged in two rows, and the slits are alternately arranged in a circular shape or a pentagonal shape or more. The slits are arranged in a polygonal shape and the width of the corner portion of the power supply wiring is expanded by the diameter or height of the circular shape or the polygonal shape having five or more sides. There is an effect that the resistance value of the wiring does not increase and the stress can be smoothly dispersed to effectively prevent short circuit and disconnection of the power wiring.

[Brief description of drawings]

FIG. 1 is a plan view showing a pattern of aluminum wiring in a corner portion of a first semiconductor device according to this embodiment.

FIG. 2 is a conceptual diagram showing a state of stress distribution by a semicircular slit of the first semiconductor device.

FIG. 3 is a plan view showing a pattern of aluminum wiring in a corner portion of a second semiconductor device according to this embodiment.

FIG. 4 is a plan view showing a pattern of aluminum wiring in a corner portion of a conventional semiconductor device described in Japanese Patent Laid-Open No. 62-45150.

FIG. 5 is a plan view showing a pattern of aluminum wiring in a corner portion of a conventional semiconductor device described in Japanese Patent Application Laid-Open No. 4-94540.

[Explanation of symbols]

 11 Semiconductor Chips 12, 21, 23 Aluminum Wiring 13 Rectangular Slit 14 Bonding Pad 15 Part of Semiconductor Chip Wiring 22 Semicircular Slit 24 Circular Slit

Claims (6)

[Claims] 1. A semiconductor device in which power supply wiring connecting electrodes of a semiconductor element formed on a semiconductor substrate is arranged on the substrate, wherein a semicircular shape or a semicircular shape is formed on both edges of the power supply wiring portion on the semiconductor substrate. A semiconductor device having a polygonal slit having five or more sides. 2. A semiconductor device in which power supply wirings connecting electrodes of a semiconductor element formed on a semiconductor substrate are arranged on the substrate, wherein the power supply wirings on the semiconductor substrate are alternately arranged on both peripheral edges of the power supply wiring portion. A semiconductor device having a semicircular shape or a polygonal slit having five or more sides. 3. A semiconductor device in which power supply wirings connecting electrodes of a semiconductor element formed on a semiconductor substrate are arranged on the substrate, wherein the power supply wirings on the semiconductor substrate are alternately arranged on both peripheral edges of the power supply wiring portion. A slit is formed in a semicircular shape or a polygonal shape with five or more sides, and the width of the power supply wiring portion is expanded by the radius or height of the slit with the semicircular shape or a polygonal shape with five or more sides. Semiconductor device. 4. A semiconductor device in which power supply wirings connecting electrodes of a semiconductor element formed on a semiconductor substrate are arranged on the substrate, wherein the power supply wirings on the semiconductor substrate are circular or pentagonal at four corners or more. 2. A semiconductor device having a polygonal slit of 1. 5. A semiconductor device in which power supply wiring connecting between electrodes of a semiconductor element formed on a semiconductor substrate is arranged on the substrate, wherein the power supply wiring on the semiconductor substrate has a circular shape or a pentagonal shape or more at four corners. 2. The semiconductor device, wherein the polygonal slits are arranged in two rows, and the respective slits are alternately arranged. 6. A semiconductor device in which power wiring connecting between electrodes of a semiconductor element formed on a semiconductor substrate is arranged on the substrate, wherein a circular shape or a pentagon or more is formed at four corners of the power wiring on the semiconductor substrate. The polygonal slits of are arranged in two rows, and the respective slits are arranged alternately, and
A semiconductor device, wherein the widths of the four corners of the power supply wiring are expanded by the diameter or height of the circular or polygonal slit having five or more sides.