JPH02297953A - Semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the stress due to sealing with mold resin and prevent the stress from acting directly on a wiring layer so as to prevent cracks on the layer by forming a dummy conductive film at the outside or the inside of wiring conductive films which are formed on a semiconductor substrate through insulating films. CONSTITUTION:The wiring conductive film 12 of a semiconductor peripheral part, the wiring conductive film 14 of the inside of a semiconductor, a bonding pad part 13 that is formed by the wiring conductive film, and a conductive film 15 for dummy are formed on a semiconductor element region 11 at each corner part of a semiconductor substrate 20. Simultaneously with the formation of patterns of these conductive films 12 and 14, the pattern of the conductive film 15 for dummy is formed and the increase in the number of a process is prevented. A wiring film 22 at the peripheral part of a semiconductor device, a dummy conductive film 25, an interlayer insulation film 26, and a protection insulating film 27 are formed at respective parts of the semiconductor substrate 20 in a cross-section taken along a line A-A' of a substrate 10. In this way, stress generated by mold resin is relieved by making the width of the conductive film 25 that is provided at the outside of the wiring film 22 narrow and thus the stress is not applied very much to the conductive film 22.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a stress relaxation structure for a wiring conductor film in a resin-sealed semiconductor device.

[Conventional technology]

Conventionally, in this type of semiconductor device, as shown in FIGS. 5 and 6, a semiconductor element region 51 is formed on one main surface of a semiconductor substrate 50, and conductor films 52 and 62 for wiring, such as aluminum, are formed through an interlayer insulating film 66. The structure is such that only the bonding pad portion 53 is etched and exposed after it is formed including the portion that will become the bonding pad and covered with a protective insulating film 67 such as a phosphosilicate glass silicon nitride film.

[Problem to be solved by the invention]

When such conventional semiconductor devices are sealed with mold resin, stress is generated due to the difference in expansion coefficient of the mold resin, a protective film such as phosphosilicate glass silicon nitride, and a conductive film such as aluminum. In particular, cracks occur in the protective film surrounding the wide conductor film and the insulating film underlying the conductor film at some corners of the semiconductor device, resulting in a reduction in the reliability of the wiring.

[Means to solve the problem]

The semiconductor device of the present invention includes a wiring conductor film formed on a semiconductor substrate with an insulating film interposed therebetween, and a dummy conductor film added to the wiring conductor film.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a plan view showing one embodiment of the present invention.

In the figure, 10 is a semiconductor substrate, 11 is a semiconductor element region,
Reference numeral 12 designates a wiring conductor film in the peripheral area of the semiconductor, 13 a bonding pad portion formed of the wiring conductor film, 14 a wiring conductor film inside the semiconductor, and 15 a dummy conductor film. The present invention does not require any new technology and can be realized using well-known conventional techniques, and it is possible to simultaneously form dummy holes (
Since turn 15 can be formed, the number of steps does not increase.

FIG. 2 is an enlarged view of the sectional view taken along the line AA' in FIG. In the figure, 20 is a semiconductor substrate, 22 is a conductive film for wiring around the semiconductor device, 25 is a dummy conductive film, 26 is an interlayer insulating film, and 27 is a protective insulating film. In a semiconductor device sealed with mold resin, stress is generated from the corners of the semiconductor device toward the center of the semiconductor device. At this time, the fifth
As shown in the figure, when a wiring conductor film is placed in a part of a corner of a semiconductor device, stress is applied directly to the wiring conductor film, causing cracks to occur in the protective insulating film and the interlayer insulating film, as is clear from FIG. On the other hand, as shown in Figure 2, by installing a dummy conductor film 25 on the outside of the wiring conductor film 22 in the semiconductor periphery, which is placed in a part of the corner of the semiconductor device, the stress caused by the molding resin is removed from the dummy conductor film 25. Since the width of the dummy conductor film 25 is narrow, the dummy conductor film 25 not only acts as a cushion and relieves the stress, but also most of the stress is applied to the dummy conductor film 25 and the wiring conductor film 22
hardly adds to it. Regarding the width of the dummy conductor film 25 itself to be actually formed and the interval between the wiring conductor film 22 to be protected, if the conductor film is made of aluminum, the width 2 interval is 5.
A thickness of about 20 μm is appropriate and has a great effect.

FIG. 3 shows a second embodiment of the present invention, and is an example in which a plurality of dummy conductor films are provided. Stress can be further alleviated by providing a dummy conductor film similar to the outside of the wiring conductor film to be protected.

FIG. 4 shows a third embodiment of the present invention, in which the dummy conductor film is divided into fine rectangular sections, which is more effective in alleviating stress.

〔Effect of the invention〕

As explained above, the present invention forms a dummy conductor film on the outside or inside of the wiring conductor film formed on the semiconductor substrate with an insulating film interposed therebetween. Not only can the generated stress be alleviated, but it can also be prevented from being applied directly to the wiring conductor film, which prevents cracks from forming in the protective insulating film and layered insulating film surrounding the wiring conductor film. This has the effect of significantly improving reliability.

[Brief explanation of drawings]

Fig. 1 is a plan view showing one embodiment of the present invention, and Fig. 2 is a plan view showing an embodiment of the present invention.
3 is a plan view showing the second embodiment of the present invention, FIG. 4 is a plan view showing the third embodiment of the present invention, and FIG. 5 is a plan view showing the conventional example. FIG. 6 is a sectional view taken along line BB' in FIG. 5. 10.20, 30, 40, 50.60... Semiconductor substrate, 11, 31, 41.51... Semiconductor element region, 12, 22, 32, 42, 52.62...・・・
・・Conductor film for wiring around semiconductor device, 13,33゜4
3.53...Ponding pad part, 14゜3
4.44.54... Conductor film for wiring inside semiconductor device, 15, 25, 35.45... Conductor film for dummy, 26.66... Interlayer insulating film , 27.67
・・・・・・Protective insulating film. Agent Patent Attorney Oto Uchihara \13flGuntesi Kutsusasaμ Fig. 1 Fig. 2 Fig. 4

Claims (3)

[Claims] (1) In a resin-sealed semiconductor device in which a conductor film serving as a wiring layer is formed on an element region of the semiconductor device formed on one principal surface of the semiconductor substrate via an insulating film, the four corners on the semiconductor substrate A semiconductor device characterized in that a dummy conductor film is disposed adjacent to the conductor film outside or inside the conductor film for wiring disposed around the corner including the conductor film. (2) The width of the dummy conductor film is formed to be sufficiently narrower than the wiring conductor film to which the dummy conductor film is attached, and the wiring conductor film to which the dummy conductor film is attached is a semiconductor substrate. 2. The semiconductor device according to claim 1, wherein the semiconductor device is wider than other wiring conductor films formed on the upper insulating film. (3) The semiconductor device according to claim 1, wherein a plurality or plurality of the dummy conductor films are provided.