JPS6152929B2 - - Google Patents

Info

Publication number
JPS6152929B2
JPS6152929B2 JP56138624A JP13862481A JPS6152929B2 JP S6152929 B2 JPS6152929 B2 JP S6152929B2 JP 56138624 A JP56138624 A JP 56138624A JP 13862481 A JP13862481 A JP 13862481A JP S6152929 B2 JPS6152929 B2 JP S6152929B2
Authority
JP
Japan
Prior art keywords
substrate
electrode
amorphous silicon
deposited
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56138624A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5841330A (ja
Inventor
Tokuro Oomachi
Yukinobu Shinoda
Takashi Nishioka
Kenji Kumabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56138624A priority Critical patent/JPS5841330A/ja
Publication of JPS5841330A publication Critical patent/JPS5841330A/ja
Publication of JPS6152929B2 publication Critical patent/JPS6152929B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
JP56138624A 1981-09-04 1981-09-04 光検出装置 Granted JPS5841330A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56138624A JPS5841330A (ja) 1981-09-04 1981-09-04 光検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56138624A JPS5841330A (ja) 1981-09-04 1981-09-04 光検出装置

Publications (2)

Publication Number Publication Date
JPS5841330A JPS5841330A (ja) 1983-03-10
JPS6152929B2 true JPS6152929B2 (cg-RX-API-DMAC7.html) 1986-11-15

Family

ID=15226408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56138624A Granted JPS5841330A (ja) 1981-09-04 1981-09-04 光検出装置

Country Status (1)

Country Link
JP (1) JPS5841330A (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6053824A (ja) * 1983-09-02 1985-03-27 Matsushita Electric Ind Co Ltd 弾性表面波素子

Also Published As

Publication number Publication date
JPS5841330A (ja) 1983-03-10

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