JPS6152231B2 - - Google Patents
Info
- Publication number
- JPS6152231B2 JPS6152231B2 JP12556383A JP12556383A JPS6152231B2 JP S6152231 B2 JPS6152231 B2 JP S6152231B2 JP 12556383 A JP12556383 A JP 12556383A JP 12556383 A JP12556383 A JP 12556383A JP S6152231 B2 JPS6152231 B2 JP S6152231B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- reaction chamber
- quartz window
- reaction
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 76
- 239000010453 quartz Substances 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 17
- 239000012495 reaction gas Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- 238000010926 purge Methods 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 claims description 11
- 238000002834 transmittance Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000004804 winding Methods 0.000 claims description 4
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 25
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000007795 chemical reaction product Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920013653 perfluoroalkoxyethylene Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/488—Protection of windows for introduction of radiation into the coating chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12556383A JPS6021381A (ja) | 1983-07-12 | 1983-07-12 | 光cvd装置の薄膜生成反応炉 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12556383A JPS6021381A (ja) | 1983-07-12 | 1983-07-12 | 光cvd装置の薄膜生成反応炉 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6021381A JPS6021381A (ja) | 1985-02-02 |
JPS6152231B2 true JPS6152231B2 (enrdf_load_stackoverflow) | 1986-11-12 |
Family
ID=14913286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12556383A Granted JPS6021381A (ja) | 1983-07-12 | 1983-07-12 | 光cvd装置の薄膜生成反応炉 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6021381A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61295373A (ja) * | 1985-06-25 | 1986-12-26 | Canon Inc | 光化学気相成長法による堆積膜の形成方法および装置 |
JPS6274081A (ja) * | 1985-09-28 | 1987-04-04 | Agency Of Ind Science & Technol | 薄膜製造方法とその装置 |
JP2777899B2 (ja) * | 1989-03-03 | 1998-07-23 | 富士通株式会社 | 記録装置 |
CA2001009C (en) * | 1989-10-19 | 2000-11-28 | Richard S. Adams | Infrared window |
FI129557B (en) | 2019-11-28 | 2022-04-29 | Picosun Oy | Substrate processing apparatus and process |
-
1983
- 1983-07-12 JP JP12556383A patent/JPS6021381A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6021381A (ja) | 1985-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4265932A (en) | Mobile transparent window apparatus and method for photochemical vapor deposition | |
EP0095275A2 (en) | Photo-assisted CVD | |
CN87106283A (zh) | 化学汽相淀积装置 | |
JPS61502900A (ja) | バレル反応器及び光化学蒸着方法 | |
US4058638A (en) | Method of optical thin film coating | |
JPS6152231B2 (enrdf_load_stackoverflow) | ||
US3939798A (en) | Optical thin film coater | |
JPH01179410A (ja) | Cvdによる薄膜の製造方法及びそれに使用される装置 | |
KR850001974B1 (ko) | 광화학적 증착방법 및 장치 | |
JP2008251956A (ja) | 酸化膜の形成方法及びその装置 | |
JPS60128265A (ja) | 気相薄膜形成装置 | |
US5328514A (en) | Device for forming film by photo-chemical vapor deposition | |
JP4094127B2 (ja) | アモルファスシリコン製造装置 | |
JPH0410622A (ja) | ドライ洗浄装置 | |
JPS6064426A (ja) | 気相反応薄膜形成方法および装置 | |
JP5026248B2 (ja) | アモルファスシリコン薄膜製造方法 | |
JP3174787B2 (ja) | 光cvd装置 | |
US4856458A (en) | Photo CVD apparatus having no ultraviolet light window | |
JPS6118125A (ja) | 薄膜形成装置 | |
JPH0334538A (ja) | 光励起反応装置 | |
JPS6118124A (ja) | 薄膜形成装置 | |
JPH04254489A (ja) | 減圧cvd装置 | |
JPS6246515A (ja) | 薄膜形成方法及びその装置 | |
JPS61196528A (ja) | 薄膜形成方法 | |
JPS61196529A (ja) | 薄膜形成装置 |