JPS6152120B2 - - Google Patents

Info

Publication number
JPS6152120B2
JPS6152120B2 JP5613179A JP5613179A JPS6152120B2 JP S6152120 B2 JPS6152120 B2 JP S6152120B2 JP 5613179 A JP5613179 A JP 5613179A JP 5613179 A JP5613179 A JP 5613179A JP S6152120 B2 JPS6152120 B2 JP S6152120B2
Authority
JP
Japan
Prior art keywords
silicon carbide
silicon
substrate
layer
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5613179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55149195A (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5613179A priority Critical patent/JPS55149195A/ja
Publication of JPS55149195A publication Critical patent/JPS55149195A/ja
Publication of JPS6152120B2 publication Critical patent/JPS6152120B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP5613179A 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate Granted JPS55149195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5613179A JPS55149195A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5613179A JPS55149195A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Publications (2)

Publication Number Publication Date
JPS55149195A JPS55149195A (en) 1980-11-20
JPS6152120B2 true JPS6152120B2 (cs) 1986-11-12

Family

ID=13018513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5613179A Granted JPS55149195A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Country Status (1)

Country Link
JP (1) JPS55149195A (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101740094B1 (ko) 2010-12-24 2017-05-25 도요탄소 가부시키가이샤 단결정 탄화규소 액상 에피택셜 성장용 유닛 및 단결정 탄화규소의 액상 에피택셜 성장 방법
JP5707614B2 (ja) * 2010-12-24 2015-04-30 東洋炭素株式会社 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP5707612B2 (ja) * 2010-12-24 2015-04-30 東洋炭素株式会社 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP5707613B2 (ja) * 2010-12-24 2015-04-30 東洋炭素株式会社 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法

Also Published As

Publication number Publication date
JPS55149195A (en) 1980-11-20

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