JPS6147663A - ゲ−ト蓄積型固体撮像デバイス - Google Patents
ゲ−ト蓄積型固体撮像デバイスInfo
- Publication number
- JPS6147663A JPS6147663A JP59169434A JP16943484A JPS6147663A JP S6147663 A JPS6147663 A JP S6147663A JP 59169434 A JP59169434 A JP 59169434A JP 16943484 A JP16943484 A JP 16943484A JP S6147663 A JPS6147663 A JP S6147663A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- cells
- pick
- cell
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 238000003384 imaging method Methods 0.000 claims description 67
- 238000009825 accumulation Methods 0.000 claims description 22
- 239000000969 carrier Substances 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59169434A JPS6147663A (ja) | 1984-08-15 | 1984-08-15 | ゲ−ト蓄積型固体撮像デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59169434A JPS6147663A (ja) | 1984-08-15 | 1984-08-15 | ゲ−ト蓄積型固体撮像デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6147663A true JPS6147663A (ja) | 1986-03-08 |
| JPH0448028B2 JPH0448028B2 (enrdf_load_stackoverflow) | 1992-08-05 |
Family
ID=15886523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59169434A Granted JPS6147663A (ja) | 1984-08-15 | 1984-08-15 | ゲ−ト蓄積型固体撮像デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6147663A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5589705A (en) * | 1992-03-24 | 1996-12-31 | Seiko Instruments Inc. | Real-time semiconductor radiation detector |
-
1984
- 1984-08-15 JP JP59169434A patent/JPS6147663A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5589705A (en) * | 1992-03-24 | 1996-12-31 | Seiko Instruments Inc. | Real-time semiconductor radiation detector |
| US5757040A (en) * | 1992-03-24 | 1998-05-26 | Seiko Instruments Inc. | Real-time semiconductor radiation detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0448028B2 (enrdf_load_stackoverflow) | 1992-08-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4155094A (en) | Solid-state imaging device | |
| US11804510B2 (en) | Image sensor including active regions | |
| US4200892A (en) | Solid state image sensor | |
| JPH0444465B2 (enrdf_load_stackoverflow) | ||
| KR890011120A (ko) | 고체촬상소자 | |
| EP1850387B1 (en) | Solid-state image pickup device | |
| JPS6230504B2 (enrdf_load_stackoverflow) | ||
| US4907054A (en) | Matrix of photosensitive elements combining a phototransistor with a storage capacitor | |
| US4148051A (en) | Solid-state imaging device | |
| JP2504504B2 (ja) | 光電変換装置 | |
| US6545331B1 (en) | Solid state imaging device, manufacturing method thereof, and solid state imaging apparatus | |
| EP0127223B1 (en) | Semiconductor device | |
| US4974043A (en) | Solid-state image sensor | |
| US4673985A (en) | Semiconductor image sensor | |
| US5115293A (en) | Solid-state imaging device | |
| JPH0414510B2 (enrdf_load_stackoverflow) | ||
| JPH09275201A (ja) | 固体撮像素子 | |
| US4433343A (en) | Extrinsic infrared detector with dopant site charge-neutralization | |
| CN103227184B (zh) | 基于复合介质栅结构像素单元的成像阵列及其曝光操作方法 | |
| JPS60254886A (ja) | 固体撮像装置 | |
| US5047862A (en) | Solid-state imager | |
| JPS6147663A (ja) | ゲ−ト蓄積型固体撮像デバイス | |
| CN111554700B (zh) | 基于复合介质栅结构的成像阵列及其曝光、读取方法 | |
| JPH11111960A (ja) | 固体撮像素子 | |
| JPS63164270A (ja) | 積層型固体撮像装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |