JPS614427U - Electron beam lithography equipment - Google Patents

Electron beam lithography equipment

Info

Publication number
JPS614427U
JPS614427U JP8770784U JP8770784U JPS614427U JP S614427 U JPS614427 U JP S614427U JP 8770784 U JP8770784 U JP 8770784U JP 8770784 U JP8770784 U JP 8770784U JP S614427 U JPS614427 U JP S614427U
Authority
JP
Japan
Prior art keywords
electron beam
marker
rays
characteristic
beam lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8770784U
Other languages
Japanese (ja)
Inventor
明 白川
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP8770784U priority Critical patent/JPS614427U/en
Publication of JPS614427U publication Critical patent/JPS614427U/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案装置の1実施例の概略構成図、第2図a
t bは同装置の動作説明図である。 主な符号の説明、1・・・・・・電子線発生源、2・・
・・・・偏向装置、3・・・・・・半導体基板、47・
・・・・X線センサ、5・・・・・・信号処理回路を含
む偏向装置駆動手段。
Figure 1 is a schematic configuration diagram of one embodiment of the device of the present invention, Figure 2 a
tb is an explanatory diagram of the operation of the device. Explanation of main symbols, 1... Electron beam source, 2...
... Deflection device, 3 ... Semiconductor substrate, 47.
. . . X-ray sensor, 5 . . . Deflection device driving means including a signal processing circuit.

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] (1)電子線を発生する電子線発生源と、・該電子線を
走査する偏向装置と、半導体′材料よりなり一面に該半
導体材料の持つ特性X線より高いエネルギの特性X線を
呈する材料よりなるマーカを付設してなる半導体基板と
、該半導体基板の前記一面とは反対側に前記マーカに対
向して配され該マーカからの特性X線を検出するX線セ
ンサと、該X線センサよりの出力を受け前記偏向装置に
基準位置情報を提供する信号処理回路とを備えてなる電
子線描画装置。
(1) An electron beam generation source that generates an electron beam, a deflection device that scans the electron beam, and a material that is made of a semiconductor material and exhibits characteristic X-rays with higher energy than the characteristic X-rays of the semiconductor material. an X-ray sensor arranged opposite to the marker on a side opposite to the one surface of the semiconductor substrate and detecting characteristic X-rays from the marker; and the X-ray sensor. and a signal processing circuit that receives an output from the deflector and provides reference position information to the deflection device.
(2)前記半導体基板は前記他面上に、前記マーカの占
める領域に対向して凹陥部を備えていることを特徴とす
る−実用新案登録請求の範囲第(1)項記載の電子線描
画装置。
(2) The semiconductor substrate is characterized in that it has a concave portion on the other surface thereof, facing the area occupied by the marker. Device.
JP8770784U 1984-06-12 1984-06-12 Electron beam lithography equipment Pending JPS614427U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8770784U JPS614427U (en) 1984-06-12 1984-06-12 Electron beam lithography equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8770784U JPS614427U (en) 1984-06-12 1984-06-12 Electron beam lithography equipment

Publications (1)

Publication Number Publication Date
JPS614427U true JPS614427U (en) 1986-01-11

Family

ID=30640174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8770784U Pending JPS614427U (en) 1984-06-12 1984-06-12 Electron beam lithography equipment

Country Status (1)

Country Link
JP (1) JPS614427U (en)

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