JPS614427U - Electron beam lithography equipment - Google Patents
Electron beam lithography equipmentInfo
- Publication number
- JPS614427U JPS614427U JP8770784U JP8770784U JPS614427U JP S614427 U JPS614427 U JP S614427U JP 8770784 U JP8770784 U JP 8770784U JP 8770784 U JP8770784 U JP 8770784U JP S614427 U JPS614427 U JP S614427U
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- marker
- rays
- characteristic
- beam lithography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Beam Exposure (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案装置の１実施例の概略構成図、第２図ａ
ｔ ｂは同装置の動作説明図である。
主な符号の説明、１・・・・・・電子線発生源、２・・
・・・・偏向装置、３・・・・・・半導体基板、４７・
・・・・Ｘ線センサ、５・・・・・・信号処理回路を含
む偏向装置駆動手段。Figure 1 is a schematic configuration diagram of one embodiment of the device of the present invention, Figure 2 a
tb is an explanatory diagram of the operation of the device. Explanation of main symbols, 1... Electron beam source, 2...
... Deflection device, 3 ... Semiconductor substrate, 47.
. . . X-ray sensor, 5 . . . Deflection device driving means including a signal processing circuit.
Claims (2)
走査する偏向装置と、半導体′材料よりなり一面に該半
導体材料の持つ特性Ｘ線より高いエネルギの特性Ｘ線を
呈する材料よりなるマーカを付設してなる半導体基板と
、該半導体基板の前記一面とは反対側に前記マーカに対
向して配され該マーカからの特性Ｘ線を検出するＸ線セ
ンサと、該Ｘ線センサよりの出力を受け前記偏向装置に
基準位置情報を提供する信号処理回路とを備えてなる電
子線描画装置。(1) An electron beam generation source that generates an electron beam, a deflection device that scans the electron beam, and a material that is made of a semiconductor material and exhibits characteristic X-rays with higher energy than the characteristic X-rays of the semiconductor material. an X-ray sensor arranged opposite to the marker on a side opposite to the one surface of the semiconductor substrate and detecting characteristic X-rays from the marker; and the X-ray sensor. and a signal processing circuit that receives an output from the deflector and provides reference position information to the deflection device.
める領域に対向して凹陥部を備えていることを特徴とす
る−実用新案登録請求の範囲第（１）項記載の電子線描
画装置。(2) The semiconductor substrate is characterized in that it has a concave portion on the other surface thereof, facing the area occupied by the marker. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8770784U JPS614427U (en) | 1984-06-12 | 1984-06-12 | Electron beam lithography equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8770784U JPS614427U (en) | 1984-06-12 | 1984-06-12 | Electron beam lithography equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS614427U true JPS614427U (en) | 1986-01-11 |
Family
ID=30640174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8770784U Pending JPS614427U (en) | 1984-06-12 | 1984-06-12 | Electron beam lithography equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS614427U (en) |
-
1984
- 1984-06-12 JP JP8770784U patent/JPS614427U/en active Pending
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