JPS6074073U - semiconductor x-ray detector - Google Patents

semiconductor x-ray detector

Info

Publication number
JPS6074073U
JPS6074073U JP16656983U JP16656983U JPS6074073U JP S6074073 U JPS6074073 U JP S6074073U JP 16656983 U JP16656983 U JP 16656983U JP 16656983 U JP16656983 U JP 16656983U JP S6074073 U JPS6074073 U JP S6074073U
Authority
JP
Japan
Prior art keywords
semiconductor
ray detector
ray
electrode
larger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16656983U
Other languages
Japanese (ja)
Inventor
駒井 徳蔵
片山 智視
土井 泰敬
Original Assignee
株式会社島津製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社島津製作所 filed Critical 株式会社島津製作所
Priority to JP16656983U priority Critical patent/JPS6074073U/en
Publication of JPS6074073U publication Critical patent/JPS6074073U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

(第1図A、 Bはこの考案の第1の実施例に係る反 
もめで、第1図Aは平面図、第1図Bは第1図A(のB
−B線で断面した断面図、第2図はこの考案費 の第2
の実施例の断面図である。 1  11・・・基板、12・・・導電層、13・・・
非晶質半導し 体層、14・・・透明導電層、15・・
・電極部、16・・・リード線部、17・・・蛍光体層
(Figures 1A and 1B show the reaction diagrams according to the first embodiment of this invention.
Due to the dispute, Figure 1A is a plan view, and Figure 1B is the B of Figure 1A.
Figure 2 is a cross-sectional view taken along line -B.
FIG. 1 11... Substrate, 12... Conductive layer, 13...
Amorphous semiconductor body layer, 14...Transparent conductive layer, 15...
- Electrode part, 16... Lead wire part, 17... Phosphor layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] X線フィルムサイズと同等若しくはそれよリラきい面積
を持ち、少な(とも一方の表面上に室料を有するX線吸
収の少ない均一な基板と、この1板の上記電極側面上に
形成された非晶質半導体ルと、この非晶質半導体層の表
面側番°こ形成されたb型形状の透明電極と、この透明
電極の表面側に元成された蛍光体層とからなる半導体X
線検出器。
A uniform substrate with low X-ray absorption that has an area equal to or larger than the X-ray film size and has a chamber material on one surface, and a non-conductive substrate formed on the side surface of the electrode of this single plate. Semiconductor
line detector.
JP16656983U 1983-10-27 1983-10-27 semiconductor x-ray detector Pending JPS6074073U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16656983U JPS6074073U (en) 1983-10-27 1983-10-27 semiconductor x-ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16656983U JPS6074073U (en) 1983-10-27 1983-10-27 semiconductor x-ray detector

Publications (1)

Publication Number Publication Date
JPS6074073U true JPS6074073U (en) 1985-05-24

Family

ID=30364637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16656983U Pending JPS6074073U (en) 1983-10-27 1983-10-27 semiconductor x-ray detector

Country Status (1)

Country Link
JP (1) JPS6074073U (en)

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