JPS6142433B2 - - Google Patents

Info

Publication number
JPS6142433B2
JPS6142433B2 JP55016527A JP1652780A JPS6142433B2 JP S6142433 B2 JPS6142433 B2 JP S6142433B2 JP 55016527 A JP55016527 A JP 55016527A JP 1652780 A JP1652780 A JP 1652780A JP S6142433 B2 JPS6142433 B2 JP S6142433B2
Authority
JP
Japan
Prior art keywords
conductivity type
layer
electrode
neutrons
hydrogenated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55016527A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56114382A (en
Inventor
Toshiro Ogino
Akitsu Takeda
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1652780A priority Critical patent/JPS56114382A/ja
Publication of JPS56114382A publication Critical patent/JPS56114382A/ja
Publication of JPS6142433B2 publication Critical patent/JPS6142433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP1652780A 1980-02-15 1980-02-15 Neutron detecting device of semiconductor Granted JPS56114382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1652780A JPS56114382A (en) 1980-02-15 1980-02-15 Neutron detecting device of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1652780A JPS56114382A (en) 1980-02-15 1980-02-15 Neutron detecting device of semiconductor

Publications (2)

Publication Number Publication Date
JPS56114382A JPS56114382A (en) 1981-09-08
JPS6142433B2 true JPS6142433B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-09-20

Family

ID=11918737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1652780A Granted JPS56114382A (en) 1980-02-15 1980-02-15 Neutron detecting device of semiconductor

Country Status (1)

Country Link
JP (1) JPS56114382A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545281B1 (en) * 2001-07-06 2003-04-08 The United States Of America As Represented By The United States Department Of Energy Pocked surface neutron detector
US8604441B2 (en) * 2008-07-24 2013-12-10 The Regents Of The University Of California Layered semiconductor neutron detectors
JP2015087115A (ja) * 2013-10-28 2015-05-07 日立Ｇｅニュークリア・エナジー株式会社 中性子数分析装置および放射線計測装置

Also Published As

Publication number Publication date
JPS56114382A (en) 1981-09-08

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