JPS56114382A - Neutron detecting device of semiconductor - Google Patents
Neutron detecting device of semiconductorInfo
- Publication number
- JPS56114382A JPS56114382A JP1652780A JP1652780A JPS56114382A JP S56114382 A JPS56114382 A JP S56114382A JP 1652780 A JP1652780 A JP 1652780A JP 1652780 A JP1652780 A JP 1652780A JP S56114382 A JPS56114382 A JP S56114382A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- neutrons
- electrodes
- electrode
- nucleus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1652780A JPS56114382A (en) | 1980-02-15 | 1980-02-15 | Neutron detecting device of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1652780A JPS56114382A (en) | 1980-02-15 | 1980-02-15 | Neutron detecting device of semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56114382A true JPS56114382A (en) | 1981-09-08 |
| JPS6142433B2 JPS6142433B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-09-20 |
Family
ID=11918737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1652780A Granted JPS56114382A (en) | 1980-02-15 | 1980-02-15 | Neutron detecting device of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56114382A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6545281B1 (en) * | 2001-07-06 | 2003-04-08 | The United States Of America As Represented By The United States Department Of Energy | Pocked surface neutron detector |
| WO2010011859A3 (en) * | 2008-07-24 | 2010-05-06 | The Regents Of The University Of California | Layered semiconductor neutron detectors |
| JP2015087115A (ja) * | 2013-10-28 | 2015-05-07 | 日立Ｇｅニュークリア・エナジー株式会社 | 中性子数分析装置および放射線計測装置 |
-
1980
- 1980-02-15 JP JP1652780A patent/JPS56114382A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6545281B1 (en) * | 2001-07-06 | 2003-04-08 | The United States Of America As Represented By The United States Department Of Energy | Pocked surface neutron detector |
| WO2010011859A3 (en) * | 2008-07-24 | 2010-05-06 | The Regents Of The University Of California | Layered semiconductor neutron detectors |
| JP2015087115A (ja) * | 2013-10-28 | 2015-05-07 | 日立Ｇｅニュークリア・エナジー株式会社 | 中性子数分析装置および放射線計測装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6142433B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-09-20 |
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