JPS56114382A - Neutron detecting device of semiconductor - Google Patents

Neutron detecting device of semiconductor

Info

Publication number
JPS56114382A
JPS56114382A JP1652780A JP1652780A JPS56114382A JP S56114382 A JPS56114382 A JP S56114382A JP 1652780 A JP1652780 A JP 1652780A JP 1652780 A JP1652780 A JP 1652780A JP S56114382 A JPS56114382 A JP S56114382A
Authority
JP
Japan
Prior art keywords
layer
neutrons
electrodes
electrode
nucleus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1652780A
Other languages
Japanese (ja)
Other versions
JPS6142433B2 (en
Inventor
Toshiro Ogino
Akitsu Takeda
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1652780A priority Critical patent/JPS56114382A/en
Publication of JPS56114382A publication Critical patent/JPS56114382A/en
Publication of JPS6142433B2 publication Critical patent/JPS6142433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Abstract

PURPOSE:To detect neutrons in high sensitivity in a solid by a method wherein a DC voltage is applied between electrodes of noncrystalline Si or Ge to make a nucleus of Si of the like absorb the high-speed neutrons incided between the electrodes, and free electrons and a hole couple produced are taken out. CONSTITUTION:A hydro-high resistance layer 8 is arranged on one surface of the first conductive type layer 7, and on the other surface thereof is cover-attached the electrode 5. Additionally, the second conductive type layer 9 is arranged on the layer 8 and the electrode 6 is fitted on the other surface of the layer 9. To operate the detector, the electrodes 5 and 6 are applied with the DC voltage which is turned to a backward bias to cause the measured neutrons to be incided from the top, the bottom or the side. Whereby a large absorption cross-section of the necleus of Si etc. causes the high-speed neutrons to be absorbed in the nucleus and the nucleus excited radiates gamma-ryas to reach the grounded state. Further, the gamma-rays produce numerous free electrons and positive hold couples in the layer 8 which are led out and detected as current pulses generated between the electrode 5 and 6, thereby enabling the neutrons to be detected in high sensitivity in the solid.
JP1652780A 1980-02-15 1980-02-15 Neutron detecting device of semiconductor Granted JPS56114382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1652780A JPS56114382A (en) 1980-02-15 1980-02-15 Neutron detecting device of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1652780A JPS56114382A (en) 1980-02-15 1980-02-15 Neutron detecting device of semiconductor

Publications (2)

Publication Number Publication Date
JPS56114382A true JPS56114382A (en) 1981-09-08
JPS6142433B2 JPS6142433B2 (en) 1986-09-20

Family

ID=11918737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1652780A Granted JPS56114382A (en) 1980-02-15 1980-02-15 Neutron detecting device of semiconductor

Country Status (1)

Country Link
JP (1) JPS56114382A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545281B1 (en) * 2001-07-06 2003-04-08 The United States Of America As Represented By The United States Department Of Energy Pocked surface neutron detector
WO2010011859A3 (en) * 2008-07-24 2010-05-06 The Regents Of The University Of California Layered semiconductor neutron detectors
JP2015087115A (en) * 2013-10-28 2015-05-07 日立Ｇｅニュークリア・エナジー株式会社 Neutron count analyzer and radiation measuring device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545281B1 (en) * 2001-07-06 2003-04-08 The United States Of America As Represented By The United States Department Of Energy Pocked surface neutron detector
WO2010011859A3 (en) * 2008-07-24 2010-05-06 The Regents Of The University Of California Layered semiconductor neutron detectors
JP2015087115A (en) * 2013-10-28 2015-05-07 日立Ｇｅニュークリア・エナジー株式会社 Neutron count analyzer and radiation measuring device

Also Published As

Publication number Publication date
JPS6142433B2 (en) 1986-09-20

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