JPS6142410B2 - - Google Patents
Info
- Publication number
- JPS6142410B2 JPS6142410B2 JP55185906A JP18590680A JPS6142410B2 JP S6142410 B2 JPS6142410 B2 JP S6142410B2 JP 55185906 A JP55185906 A JP 55185906A JP 18590680 A JP18590680 A JP 18590680A JP S6142410 B2 JPS6142410 B2 JP S6142410B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- mask
- mask substrate
- pattern
- fresnel zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 67
- 230000003287 optical effect Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 238000001514 detection method Methods 0.000 claims description 19
- 238000003384 imaging method Methods 0.000 description 10
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55185906A JPS57109335A (en) | 1980-12-26 | 1980-12-26 | Positional matching method between mask substrate and wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55185906A JPS57109335A (en) | 1980-12-26 | 1980-12-26 | Positional matching method between mask substrate and wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57109335A JPS57109335A (en) | 1982-07-07 |
| JPS6142410B2 true JPS6142410B2 (nl) | 1986-09-20 |
Family
ID=16178945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55185906A Granted JPS57109335A (en) | 1980-12-26 | 1980-12-26 | Positional matching method between mask substrate and wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57109335A (nl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2538923A1 (fr) * | 1982-12-30 | 1984-07-06 | Thomson Csf | Procede et dispositif d'alignement optique de motifs dans deux plans rapproches dans un appareil d'exposition comprenant une source de rayonnement divergent |
| JPS60173835A (ja) * | 1984-01-30 | 1985-09-07 | Nippon Telegr & Teleph Corp <Ntt> | 回折格子によるギヤツプ制御法 |
-
1980
- 1980-12-26 JP JP55185906A patent/JPS57109335A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57109335A (en) | 1982-07-07 |
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