JPS6142133A - Semiconductor substrate heating apparatus - Google Patents

Abstract

PURPOSE:To prevent slip of wafer which is generated when a semiconductor wafer is placed by providing many thin line grooves on a hot plate in a heating apparatus which heats the semiconductor wafer placed on the hot plate. CONSTITUTION:Since any friction is not generated until the air between a semiconductor wafer 22 and a hot plate 24 is exhausted in such a case as placing a semiconductor wafer 22 on a hot plate 24 during transfer of semiconductor wafer 22, many thin line grooves 27, 27... are provided to the surface of hot plate 24 in order to prevent slip of semiconductor wafer 22 on the hot plate 24. Thereby, the air can be supplied and exhausted freely between the semiconductor wafer 22 and hot plate 24 and the semiconductor wafer 22 does not slip and is not placed closely to the hot plate.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor substrate heating device that heats a semiconductor wafer on a hot plate.

[Technical Background of the Invention] In the manufacturing process of semiconductor devices, various heat treatments such as drying a resist on a semiconductor wafer are necessary, and a hot plate has conventionally been used for this heating.

By the way, when a semiconductor wafer is placed on this hot plate, the semiconductor wafer tends to shift laterally, and in order to prevent this shift, the methods shown in FIGS. 5 to 7 have conventionally been adopted. ing.

First, in FIGS. 5(a) and 5(b), a guide 13 is provided around the semiconductor wafer 12 on the hot plate 11. As shown in FIGS.

In FIGS. 6(a) and 6(b), a circular groove 14 into which the semiconductor wafer 12 is placed is formed on the hot plate 11. Further, in FIGS. 7(a) and 7(b), a suction hole 15 is formed in the hot plate 11, and the semiconductor wafer 12 is fixed through the hole 15 by a vacuum chuck.

In addition, when separating the semiconductor wafer 12 from above the hot plate 11, since the semiconductor wafer 12 is in close contact with each other, the semiconductor wafer 12 is pushed up with a rod-shaped object, or the air is forced between the hot plate 11 and the semiconductor wafer 12.
Operations such as pouring water between 2 and 2 were performed.

[Problems in the Background Art] In a semiconductor substrate heating device, the semiconductor wafer is placed at a predetermined position on the hot plate in the conveyance path of the semiconductor wafer on the hot plate. The methods shown in FIGS. 5 to 7 are all intended to forcibly stop the semiconductor wafer, rather than to prevent the lateral shift itself when the semiconductor wafer is placed. Therefore, when the wafer size increases, there is a lack of compatibility, and processing of the hot plate takes time.

In addition, the above method of separating the semiconductor wafer from the hot plate requires a pushing mechanism, an air blowing mechanism, etc., which complicates the overall mechanism of the device. It was also getting worse.

[Object of the Invention] The present invention has been made in view of the above-mentioned circumstances, and its purpose is to prevent the lateral displacement of a semiconductor wafer that occurs when it is placed on a hot plate, and to prevent the lateral displacement that occurs when it is lifted from the hot plate. It is an object of the present invention to provide a semiconductor substrate heating device that can prevent a semiconductor wafer and a hot plate from coming into close contact with each other and has uniform heating properties.

[Summary of the Invention] The present invention is a semiconductor substrate heating device that heats a semiconductor wafer on a hot plate, in which a large number of fine linear grooves are provided on the hot plate.

[Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. First, the transport path of the semiconductor wafer will be explained with reference to FIGS. 3 and 4. In Figure 3, two conveyor belts 2
The semiconductor wafer 22 placed on the wafers 1a and 2Ib is transported over the hot plate 24 as shown by arrow A by the drive @23. The conveyor belt 218° 21b and the drive machine 23
are both fixed on a support stand 25.

From this state, when the semiconductor wafer 22 comes to a predetermined position, it is driven! I23 stops. Subsequently, as shown in FIG. 4, when the cam 26 rotates and the support base 25 descends, the semiconductor wafer 22 is placed on the hot plate 24. Thus, the semiconductor wafer 22 is heated by the hot plate 24 for a certain period of time (approximately 200°C
(below), the cam 26 rotates and, contrary to the above, the semiconductor wafer 22 is lifted vertically by the conveyor belts 21a and 21b, and is then conveyed by the driver 23 in the six directions of the arrows.

During this transport path, when the semiconductor wafer 22 is placed on the hot plate 24, no friction occurs until the air between the semiconductor wafer 22 and the hot plate 24 disappears. trying to slide on it.

Further, the semiconductor wafer 22 is transported by the conveyor belts 21a, 21
When the semiconductor wafer 22 and the hot plate 24 are lifted by b, they remain in close contact with each other until air enters the space, making it difficult for them to separate.

Therefore, in this embodiment, as shown in FIGS. 1 and 2, a large number of fine linear grooves 27 are formed on the surface of the hot plate 24.
．． 27... is provided. As a result, air 28 can freely move in and out between the semiconductor wafer 22 and the hot plate 24, so that the semiconductor wafer 22 will neither slip nor come into close contact with each other. Note that 29a and 29b are grooves for storing the conveyor belts 28a and 28b, respectively, when they are lowered.

In the above embodiment, the linear grooves 27 are formed parallel to the longitudinal direction of the hot plate 24, but the grooves 27 are not limited to this, and may be formed perpendicularly or obliquely to the longitudinal direction of the hot plate 24. It may be formed into Further, the shape may be either straight or curved, but the surface roughness is determined by the surface temperature of the semiconductor wafer 22.
There should be no variation in the penetration. In this example, the surface roughness was 20 to 900 μm.

[Effects of the Invention] As described above, according to the present invention, it is possible to prevent slippage that occurs when a semiconductor wafer is placed on a wafer conveyance path, and to accurately place the semiconductor wafer at a predetermined position on a hot plate. With,
It is possible to provide a semiconductor substrate heating device that does not cause close contact between the two when placing the semiconductor wafer on the heating plate, allows the semiconductor wafer to be easily separated without the need for a special mechanism, and has good heat uniformity. .

[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a plan view showing the configuration of a hot plate according to an embodiment of the present invention, FIG. 2 is a side view of the same hot plate, and FIGS. 3 and 4 are semiconductor substrates, respectively. A block diagram showing a wafer transport path including a heating device, and FIGS. 5 to 7 are a plan view and a sectional view, respectively, of a conventional semiconductor substrate heating device. 22... Semiconductor wafer, 24... Hot plate, 27...
striae sulcus.

Claims (1)

[Claims] A semiconductor substrate heating device for heating a semiconductor wafer on a hot plate, characterized in that a large number of fine linear grooves are provided on the hot plate.