JPS6140639B2 - - Google Patents
Info
- Publication number
- JPS6140639B2 JPS6140639B2 JP58214612A JP21461283A JPS6140639B2 JP S6140639 B2 JPS6140639 B2 JP S6140639B2 JP 58214612 A JP58214612 A JP 58214612A JP 21461283 A JP21461283 A JP 21461283A JP S6140639 B2 JPS6140639 B2 JP S6140639B2
- Authority
- JP
- Japan
- Prior art keywords
- die
- dies
- silicon
- ribbon
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21461283A JPS60108398A (ja) | 1983-11-15 | 1983-11-15 | シリコン・リボン結晶の成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21461283A JPS60108398A (ja) | 1983-11-15 | 1983-11-15 | シリコン・リボン結晶の成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60108398A JPS60108398A (ja) | 1985-06-13 |
JPS6140639B2 true JPS6140639B2 (enrdf_load_stackoverflow) | 1986-09-10 |
Family
ID=16658602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21461283A Granted JPS60108398A (ja) | 1983-11-15 | 1983-11-15 | シリコン・リボン結晶の成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60108398A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2769639B1 (fr) * | 1997-10-10 | 1999-11-12 | Commissariat Energie Atomique | Filiere pour le tirage de cristaux a partir d'un bain fondu |
US8557112B2 (en) | 2007-10-10 | 2013-10-15 | Toray Industries, Inc. | Fine bubble diffusing pipe, fine bubble diffusing apparatus, and submerged membrane separation apparatus |
CN103160915A (zh) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | 一种c形硅芯的拉制模板 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5355484A (en) * | 1976-10-29 | 1978-05-19 | Agency Of Ind Science & Technol | Manufacturing apparatus for belt-shaped silicon crystal |
-
1983
- 1983-11-15 JP JP21461283A patent/JPS60108398A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60108398A (ja) | 1985-06-13 |
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