JPS60108398A - シリコン・リボン結晶の成長方法 - Google Patents
シリコン・リボン結晶の成長方法Info
- Publication number
- JPS60108398A JPS60108398A JP21461283A JP21461283A JPS60108398A JP S60108398 A JPS60108398 A JP S60108398A JP 21461283 A JP21461283 A JP 21461283A JP 21461283 A JP21461283 A JP 21461283A JP S60108398 A JPS60108398 A JP S60108398A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- die
- dies
- crystal
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000013078 crystal Substances 0.000 title claims abstract description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 19
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 17
- 239000010439 graphite Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000000630 rising effect Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 15
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 9
- 239000007788 liquid Substances 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21461283A JPS60108398A (ja) | 1983-11-15 | 1983-11-15 | シリコン・リボン結晶の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21461283A JPS60108398A (ja) | 1983-11-15 | 1983-11-15 | シリコン・リボン結晶の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60108398A true JPS60108398A (ja) | 1985-06-13 |
| JPS6140639B2 JPS6140639B2 (enrdf_load_stackoverflow) | 1986-09-10 |
Family
ID=16658602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21461283A Granted JPS60108398A (ja) | 1983-11-15 | 1983-11-15 | シリコン・リボン結晶の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60108398A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2769639A1 (fr) * | 1997-10-10 | 1999-04-16 | Commissariat Energie Atomique | Filiere pour le tirage de cristaux a partir d'un bain fondu |
| CN103160915A (zh) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | 一种c形硅芯的拉制模板 |
| US8557112B2 (en) | 2007-10-10 | 2013-10-15 | Toray Industries, Inc. | Fine bubble diffusing pipe, fine bubble diffusing apparatus, and submerged membrane separation apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5355484A (en) * | 1976-10-29 | 1978-05-19 | Agency Of Ind Science & Technol | Manufacturing apparatus for belt-shaped silicon crystal |
-
1983
- 1983-11-15 JP JP21461283A patent/JPS60108398A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5355484A (en) * | 1976-10-29 | 1978-05-19 | Agency Of Ind Science & Technol | Manufacturing apparatus for belt-shaped silicon crystal |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2769639A1 (fr) * | 1997-10-10 | 1999-04-16 | Commissariat Energie Atomique | Filiere pour le tirage de cristaux a partir d'un bain fondu |
| WO1999019545A1 (fr) * | 1997-10-10 | 1999-04-22 | Commissariat A L'energie Atomique | Filiere pour le tirage de cristaux a partir d'un bain fondu |
| US6325852B1 (en) | 1997-10-10 | 2001-12-04 | Commissariat A L'energie Atomique | Die for shaped crystal growth from a molten bath |
| US8557112B2 (en) | 2007-10-10 | 2013-10-15 | Toray Industries, Inc. | Fine bubble diffusing pipe, fine bubble diffusing apparatus, and submerged membrane separation apparatus |
| CN103160915A (zh) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | 一种c形硅芯的拉制模板 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6140639B2 (enrdf_load_stackoverflow) | 1986-09-10 |
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