JPS60108398A - シリコン・リボン結晶の成長方法 - Google Patents

シリコン・リボン結晶の成長方法

Info

Publication number
JPS60108398A
JPS60108398A JP21461283A JP21461283A JPS60108398A JP S60108398 A JPS60108398 A JP S60108398A JP 21461283 A JP21461283 A JP 21461283A JP 21461283 A JP21461283 A JP 21461283A JP S60108398 A JPS60108398 A JP S60108398A
Authority
JP
Japan
Prior art keywords
silicon
die
dies
crystal
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21461283A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6140639B2 (enrdf_load_stackoverflow
Inventor
Naoaki Maki
真木　直明
Masanaru Abe
阿部　昌匠
Toshiro Matsui
松井　都四郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP21461283A priority Critical patent/JPS60108398A/ja
Publication of JPS60108398A publication Critical patent/JPS60108398A/ja
Publication of JPS6140639B2 publication Critical patent/JPS6140639B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP21461283A 1983-11-15 1983-11-15 シリコン・リボン結晶の成長方法 Granted JPS60108398A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21461283A JPS60108398A (ja) 1983-11-15 1983-11-15 シリコン・リボン結晶の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21461283A JPS60108398A (ja) 1983-11-15 1983-11-15 シリコン・リボン結晶の成長方法

Publications (2)

Publication Number Publication Date
JPS60108398A true JPS60108398A (ja) 1985-06-13
JPS6140639B2 JPS6140639B2 (enrdf_load_stackoverflow) 1986-09-10

Family

ID=16658602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21461283A Granted JPS60108398A (ja) 1983-11-15 1983-11-15 シリコン・リボン結晶の成長方法

Country Status (1)

Country Link
JP (1) JPS60108398A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769639A1 (fr) * 1997-10-10 1999-04-16 Commissariat Energie Atomique Filiere pour le tirage de cristaux a partir d'un bain fondu
CN103160915A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种c形硅芯的拉制模板
US8557112B2 (en) 2007-10-10 2013-10-15 Toray Industries, Inc. Fine bubble diffusing pipe, fine bubble diffusing apparatus, and submerged membrane separation apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5355484A (en) * 1976-10-29 1978-05-19 Agency Of Ind Science & Technol Manufacturing apparatus for belt-shaped silicon crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5355484A (en) * 1976-10-29 1978-05-19 Agency Of Ind Science & Technol Manufacturing apparatus for belt-shaped silicon crystal

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769639A1 (fr) * 1997-10-10 1999-04-16 Commissariat Energie Atomique Filiere pour le tirage de cristaux a partir d'un bain fondu
WO1999019545A1 (fr) * 1997-10-10 1999-04-22 Commissariat A L'energie Atomique Filiere pour le tirage de cristaux a partir d'un bain fondu
US6325852B1 (en) 1997-10-10 2001-12-04 Commissariat A L'energie Atomique Die for shaped crystal growth from a molten bath
US8557112B2 (en) 2007-10-10 2013-10-15 Toray Industries, Inc. Fine bubble diffusing pipe, fine bubble diffusing apparatus, and submerged membrane separation apparatus
CN103160915A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种c形硅芯的拉制模板

Also Published As

Publication number Publication date
JPS6140639B2 (enrdf_load_stackoverflow) 1986-09-10

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