JPS6140031A - 真空処理装置 - Google Patents

真空処理装置

Info

Publication number
JPS6140031A
JPS6140031A JP16091084A JP16091084A JPS6140031A JP S6140031 A JPS6140031 A JP S6140031A JP 16091084 A JP16091084 A JP 16091084A JP 16091084 A JP16091084 A JP 16091084A JP S6140031 A JPS6140031 A JP S6140031A
Authority
JP
Japan
Prior art keywords
power supply
turntable
vacuum
shaft
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16091084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0256809B2 (OSRAM
Inventor
Kosuke Oshio
大塩　広介
Osamu Watanabe
修 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd filed Critical Toshiba Corp
Priority to JP16091084A priority Critical patent/JPS6140031A/ja
Publication of JPS6140031A publication Critical patent/JPS6140031A/ja
Publication of JPH0256809B2 publication Critical patent/JPH0256809B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP16091084A 1984-07-31 1984-07-31 真空処理装置 Granted JPS6140031A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16091084A JPS6140031A (ja) 1984-07-31 1984-07-31 真空処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16091084A JPS6140031A (ja) 1984-07-31 1984-07-31 真空処理装置

Publications (2)

Publication Number Publication Date
JPS6140031A true JPS6140031A (ja) 1986-02-26
JPH0256809B2 JPH0256809B2 (OSRAM) 1990-12-03

Family

ID=15724965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16091084A Granted JPS6140031A (ja) 1984-07-31 1984-07-31 真空処理装置

Country Status (1)

Country Link
JP (1) JPS6140031A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63223487A (ja) * 1987-03-10 1988-09-16 株式会社　アスカル 高真空型輻射線集中加熱装置
JP2008156746A (ja) * 2006-11-30 2008-07-10 Canon Anelva Corp 電力導入装置及び成膜方法
JP2018518056A (ja) * 2015-06-05 2018-07-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ サセプタの位置付け及び回転装置、並びに使用の方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63223487A (ja) * 1987-03-10 1988-09-16 株式会社　アスカル 高真空型輻射線集中加熱装置
JP2008156746A (ja) * 2006-11-30 2008-07-10 Canon Anelva Corp 電力導入装置及び成膜方法
JP2018518056A (ja) * 2015-06-05 2018-07-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ サセプタの位置付け及び回転装置、並びに使用の方法

Also Published As

Publication number Publication date
JPH0256809B2 (OSRAM) 1990-12-03

Similar Documents

Publication Publication Date Title
US5250137A (en) Plasma treating apparatus
US3677924A (en) Rf sputtering method
KR100297358B1 (ko) 플라즈마에칭장치
WO1988009054A1 (en) Electrostatic chuck using ac field excitation
JP3225850B2 (ja) 静電吸着電極およびその製作方法
KR20040063825A (ko) 플라즈마 처리 장치 및 포커스 링
US4459823A (en) Rotating liquid nitrogen cooled substrate holder
JPH02290973A (ja) 薄膜形成装置
JPS6269620A (ja) プラズマ処理装置
JP2017084872A (ja) フォーカスリング及びセンサチップ
US5382803A (en) Ion injection device
KR20190132958A (ko) 처리 장치
JPS6140031A (ja) 真空処理装置
KR850006777A (ko) 건식 에칭장치
US5064522A (en) Feed through for application of hf energy
CN111243926A (zh) 一种载台系统
JP2001230307A (ja) 半導体製造装置
JPS5918638A (ja) ドライエツチング装置
US4938859A (en) Ion bombardment device with high frequency
CN113939903B (zh) 吸附装置以及真空处理装置
JPS62229947A (ja) ドライエツチング装置
JPS60187023A (ja) プラズマ処理装置
JPH0639693B2 (ja) 誘電体バイアススパツタリング装置
JPS63111174A (ja) 真空槽内における基板の表面処理方法及び装置
JP2678780B2 (ja) プラズマ装置