JPS6138609B2 - - Google Patents
Info
- Publication number
- JPS6138609B2 JPS6138609B2 JP11070577A JP11070577A JPS6138609B2 JP S6138609 B2 JPS6138609 B2 JP S6138609B2 JP 11070577 A JP11070577 A JP 11070577A JP 11070577 A JP11070577 A JP 11070577A JP S6138609 B2 JPS6138609 B2 JP S6138609B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- oxidation
- etching
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 81
- 230000003647 oxidation Effects 0.000 claims description 61
- 238000007254 oxidation reaction Methods 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 40
- 230000002265 prevention Effects 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000000992 sputter etching Methods 0.000 claims description 17
- 230000003064 anti-oxidating effect Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000003963 antioxidant agent Substances 0.000 claims 7
- 230000003078 antioxidant effect Effects 0.000 claims 7
- 235000006708 antioxidants Nutrition 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 239000007789 gas Substances 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 5
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 238000006677 Appel reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11070577A JPS5444478A (en) | 1977-09-14 | 1977-09-14 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11070577A JPS5444478A (en) | 1977-09-14 | 1977-09-14 | Manufacture for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5444478A JPS5444478A (en) | 1979-04-07 |
| JPS6138609B2 true JPS6138609B2 (fr) | 1986-08-30 |
Family
ID=14542357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11070577A Granted JPS5444478A (en) | 1977-09-14 | 1977-09-14 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5444478A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8004005A (nl) * | 1980-07-11 | 1982-02-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| JPS5772332A (en) * | 1980-10-23 | 1982-05-06 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57199232A (en) * | 1981-06-03 | 1982-12-07 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5832430A (ja) * | 1981-08-21 | 1983-02-25 | Toshiba Corp | 半導体装置の製造方法 |
-
1977
- 1977-09-14 JP JP11070577A patent/JPS5444478A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5444478A (en) | 1979-04-07 |
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