JPS6138549B2 - - Google Patents
Info
- Publication number
- JPS6138549B2 JPS6138549B2 JP11078678A JP11078678A JPS6138549B2 JP S6138549 B2 JPS6138549 B2 JP S6138549B2 JP 11078678 A JP11078678 A JP 11078678A JP 11078678 A JP11078678 A JP 11078678A JP S6138549 B2 JPS6138549 B2 JP S6138549B2
- Authority
- JP
- Japan
- Prior art keywords
- odd
- mager
- information
- detector
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0866—Detecting magnetic domains
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11078678A JPS5538653A (en) | 1978-09-11 | 1978-09-11 | Magnetic bubble memory element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11078678A JPS5538653A (en) | 1978-09-11 | 1978-09-11 | Magnetic bubble memory element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5538653A JPS5538653A (en) | 1980-03-18 |
JPS6138549B2 true JPS6138549B2 (en, 2012) | 1986-08-29 |
Family
ID=14544583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11078678A Granted JPS5538653A (en) | 1978-09-11 | 1978-09-11 | Magnetic bubble memory element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5538653A (en, 2012) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55113185A (en) * | 1979-02-22 | 1980-09-01 | Nec Corp | Magnetic bubble memory element |
JPS5837895A (ja) * | 1981-08-31 | 1983-03-05 | Fujitsu Ltd | 磁気バブルメモリデバイスの駆動方法 |
JPS5856274A (ja) * | 1981-09-30 | 1983-04-02 | Hitachi Ltd | 磁気バブルメモリのセンスアンプ |
JPS5883381A (ja) * | 1981-11-09 | 1983-05-19 | Fujitsu Ltd | 磁気バブルメモリ素子 |
US4520459A (en) * | 1983-06-29 | 1985-05-28 | Burroughs Corporation | Bubble memory which transfers bubbles in both right-to-left and left-to-right SPS loops to provide a short access time |
US6795326B2 (en) * | 2001-12-12 | 2004-09-21 | Micron Technology, Inc. | Flash array implementation with local and global bit lines |
-
1978
- 1978-09-11 JP JP11078678A patent/JPS5538653A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5538653A (en) | 1980-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5592434A (en) | Synchronous semiconductor memory device | |
EP0902433A2 (en) | Synchronous dynamic random access memory | |
US7394718B2 (en) | Semiconductor memory device having a global data bus | |
JPH07105134B2 (ja) | 半導体記憶装置 | |
JPS6138549B2 (en, 2012) | ||
US4164027A (en) | Fault tolerant bubble memory with a single major loop having an integral stationary register | |
US4145757A (en) | Fault tolerant bubble memory with redundancy using a stationary register on a single chip | |
JPS63247992A (ja) | 集積メモリ回路 | |
US4187554A (en) | Fault tolerant bubble memory with redundancy using a stationary register on a single chip | |
US4075708A (en) | Large capacity major-minor loop bubble domain memory with redundancy | |
JP2003332467A (ja) | 半導体装置 | |
JP2938493B2 (ja) | 半導体記憶装置 | |
US4326268A (en) | Magnetic bubble memory device | |
JPH0713850B2 (ja) | 半導体記憶装置 | |
JPH06103594B2 (ja) | 分割ビットライン感知増幅器を内蔵したcmos・dram | |
JPS62271294A (ja) | 磁気バブルメモリ素子 | |
JPS633393B2 (en, 2012) | ||
JPS6366785A (ja) | 磁気バブルメモリ装置 | |
JPS6322385B2 (en, 2012) | ||
JPS634488A (ja) | 磁気バブルメモリ装置 | |
JPS624796B2 (en, 2012) | ||
JPH0713851B2 (ja) | 半導体記憶装置 | |
JPS5994291A (ja) | 磁気バブルメモリ素子 | |
JPS63229693A (ja) | 半導体集積化メモリ | |
JPS6215951B2 (en, 2012) |