JPS6135713B2 - - Google Patents

Info

Publication number
JPS6135713B2
JPS6135713B2 JP53059227A JP5922778A JPS6135713B2 JP S6135713 B2 JPS6135713 B2 JP S6135713B2 JP 53059227 A JP53059227 A JP 53059227A JP 5922778 A JP5922778 A JP 5922778A JP S6135713 B2 JPS6135713 B2 JP S6135713B2
Authority
JP
Japan
Prior art keywords
region
source
drain
type
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53059227A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54150091A (en
Inventor
Toyoki Takemoto
Haruyasu Yamada
Michihiro Inoe
Hideaki Sadamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5922778A priority Critical patent/JPS54150091A/ja
Publication of JPS54150091A publication Critical patent/JPS54150091A/ja
Publication of JPS6135713B2 publication Critical patent/JPS6135713B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP5922778A 1978-05-17 1978-05-17 Semiconductor device Granted JPS54150091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5922778A JPS54150091A (en) 1978-05-17 1978-05-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5922778A JPS54150091A (en) 1978-05-17 1978-05-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54150091A JPS54150091A (en) 1979-11-24
JPS6135713B2 true JPS6135713B2 (enrdf_load_stackoverflow) 1986-08-14

Family

ID=13107270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5922778A Granted JPS54150091A (en) 1978-05-17 1978-05-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54150091A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637269A (ja) * 1992-07-17 1994-02-10 Mitsubishi Electric Corp 接合型電界効果トランジスタ、その接合型電界効果トランジスタを含む半導体記憶装置およびそれらの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5729065B2 (enrdf_load_stackoverflow) * 1973-10-01 1982-06-21
JPS5124874A (ja) * 1974-08-23 1976-02-28 Nippon Telegraph & Telephone Setsugogatadenkaikokatoranjisuta

Also Published As

Publication number Publication date
JPS54150091A (en) 1979-11-24

Similar Documents

Publication Publication Date Title
US4965220A (en) Method of manufacturing a semiconductor integrated circuit device comprising an MOS transistor and a bipolar transistor
US4484388A (en) Method for manufacturing semiconductor Bi-CMOS device
US4826780A (en) Method of making bipolar transistors
US8247300B2 (en) Control of dopant diffusion from buried layers in bipolar integrated circuits
US4379726A (en) Method of manufacturing semiconductor device utilizing outdiffusion and epitaxial deposition
US4047217A (en) High-gain, high-voltage transistor for linear integrated circuits
JPS5846863B2 (ja) 半導体集積回路装置
US3414782A (en) Semiconductor structure particularly for performing unipolar transistor functions in integrated circuits
KR910006672B1 (ko) 반도체 집적회로 장치 및 그의 제조 방법
JPS60194558A (ja) 半導体装置の製造方法
US4535529A (en) Method of making semiconductor devices by forming an impurity adjusted epitaxial layer over out diffused buried layers having different lateral conductivity types
US4724221A (en) High-speed, low-power-dissipation integrated circuits
US3582725A (en) Semiconductor integrated circuit device and the method of manufacturing the same
JPS6135713B2 (enrdf_load_stackoverflow)
JPS5830742B2 (ja) 接合形電界効果半導体装置
JP2507632B2 (ja) 半導体装置
US5506156A (en) Method of fabricating bipolar transistor having high speed and MOS transistor having small size
JPS5944784B2 (ja) 相補型mos半導体装置
JP2508218B2 (ja) 相補型mis集積回路
JPS6241427B2 (enrdf_load_stackoverflow)
JPS63175463A (ja) バイmos集積回路の製造方法
JP2507055B2 (ja) 半導体集積回路の製造方法
JPH02170571A (ja) 半導体装置とその製造方法
JPS6222464B2 (enrdf_load_stackoverflow)
JPH05864B2 (enrdf_load_stackoverflow)