JPS6134273B2 - - Google Patents
Info
- Publication number
- JPS6134273B2 JPS6134273B2 JP13882580A JP13882580A JPS6134273B2 JP S6134273 B2 JPS6134273 B2 JP S6134273B2 JP 13882580 A JP13882580 A JP 13882580A JP 13882580 A JP13882580 A JP 13882580A JP S6134273 B2 JPS6134273 B2 JP S6134273B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- pulse current
- optical
- light emitting
- optical semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 12
- 230000007547 defect Effects 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 20
- 230000006798 recombination Effects 0.000 description 17
- 238000005215 recombination Methods 0.000 description 14
- 230000002950 deficient Effects 0.000 description 13
- 238000005259 measurement Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000005070 sampling Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/52—Testing for short-circuits, leakage current or ground faults
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13882580A JPS5763868A (en) | 1980-10-06 | 1980-10-06 | Sorting method for light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13882580A JPS5763868A (en) | 1980-10-06 | 1980-10-06 | Sorting method for light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5763868A JPS5763868A (en) | 1982-04-17 |
JPS6134273B2 true JPS6134273B2 (enrdf_load_html_response) | 1986-08-06 |
Family
ID=15231096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13882580A Granted JPS5763868A (en) | 1980-10-06 | 1980-10-06 | Sorting method for light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5763868A (enrdf_load_html_response) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63174873U (enrdf_load_html_response) * | 1987-02-23 | 1988-11-14 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010034240A (ja) * | 2008-07-28 | 2010-02-12 | Panasonic Electric Works Co Ltd | 照明装置 |
-
1980
- 1980-10-06 JP JP13882580A patent/JPS5763868A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63174873U (enrdf_load_html_response) * | 1987-02-23 | 1988-11-14 |
Also Published As
Publication number | Publication date |
---|---|
JPS5763868A (en) | 1982-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2863633B2 (ja) | 半導体デバイスの加速的劣化テストのための装置及び方法 | |
Kremer et al. | Transient photoconductivity measurements in semi‐insulating GaAs. I. An analog approach | |
US5877419A (en) | Method for estimating the service life of a power semiconductor component | |
US5532600A (en) | Method of and apparatus for evaluating reliability of metal interconnect | |
EP0453104A2 (en) | A method and apparatus for measuring a carrier lifetime of IV group semiconductor | |
EP0483983B1 (en) | Method and apparatus for testing the soldering of semiconductor devices by the detection of leakage current | |
US8093920B2 (en) | Accurate measuring of long steady state minority carrier diffusion lengths | |
TWI482233B (zh) | 用於檢測半導體元件之熱性與電性之間的關係的方法及設備 | |
JPS6134273B2 (enrdf_load_html_response) | ||
Lee et al. | Measurement time reduction for generation lifetimes | |
JPH10160785A (ja) | 半導体レーザの選別方法及びその装置 | |
Lagowski et al. | Non-contact deep level transient spectroscopy (DLTS) based on surface photovoltage | |
Chobola et al. | Noise and scanning by local illumination as reliability estimation for silicon solar cells | |
CA2986638C (en) | Method for testing the die-attach of a photovoltaic cell assembly | |
US7259703B2 (en) | Device for recording laser trim progress and for detecting laser beam misalignment | |
JPH0864652A (ja) | エピタキシャルウェハの検査方法 | |
Blondeel et al. | Photoinduced current transient spectroscopy of deep defects in n-type ultrapure germanium | |
DE19723080A1 (de) | Prüfverfahren für Halbleiterbauelemente | |
Rakhshani et al. | Additive double gate analysis in photoinduced current transient spectroscopy: Application to cuprous oxide | |
RU2032963C1 (ru) | Способ отбраковки светодиодов по радиационной стойкости | |
US4661771A (en) | Method of screening resin-sealed semiconductor devices | |
JP3658150B2 (ja) | 半導体素子のクラック検査方法及び装置 | |
Bothe et al. | Imaging techniques for the analysis of silicon wafers and solar cells | |
JP2740903B2 (ja) | 化合物半導体基板の評価方法 | |
Sim | The reliability of silicon avalanche photodiodes for use in optical-fiber transmission systems |