JPS6133789A - Solder alloy for connector junction - Google Patents

Solder alloy for connector junction

Info

Publication number
JPS6133789A
JPS6133789A JP59153417A JP15341784A JPS6133789A JP S6133789 A JPS6133789 A JP S6133789A JP 59153417 A JP59153417 A JP 59153417A JP 15341784 A JP15341784 A JP 15341784A JP S6133789 A JPS6133789 A JP S6133789A
Authority
JP
Japan
Prior art keywords
alloy
solder
contact
connector
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59153417A
Other languages
Japanese (ja)
Other versions
JPH0680882B2 (en
Inventor
Eiji Horikoshi
堀越 英二
Kaoru Hashimoto
薫 橋本
Takehiko Sato
武彦 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59153417A priority Critical patent/JPH0680882B2/en
Publication of JPS6133789A publication Critical patent/JPS6133789A/en
Publication of JPH0680882B2 publication Critical patent/JPH0680882B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

PURPOSE:To stabilize the contact with the metallic pins of a semiconductor module by using a solder alloy constituted by adding a specific ratio of Au to an In-Sn alloy having a prescribed compounding ratio for the solder alloy to be packed into a connecting tank of a solder melting type high-density connector. CONSTITUTION:The solder alloy formed by adding Au to the In-Sn alloy consisting of 41-93wt% In and the balance Sn at 0.1-19.5wt% by the total weight of said alloy is packed into the connecting tank for the solder melting type high- density connector, by which the packaging of the semiconductor element to a printed board is executed. The contact with the metallic pins of the semiconductor module is thus stabilized and the life of the metallic pins is considerably extended.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半田溶融式高密度コネクタの接続槽に充填する
半田合金の組成に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the composition of a solder alloy filled in a connection tank of a solder melting type high-density connector.

電算機の処理能力を向上する方法としてrc。rc as a way to improve the processing power of a computer.

LSIなどの半導体チップは単位素子の小形化と大容量
化が進められているが、同時に実装法についてもち改良
が進められている。
Semiconductor chips such as LSIs are becoming smaller in size and larger in capacity, but at the same time improvements are being made in mounting methods.

すなわち従来はIC,LSIなどのチップを多層配線を
施したセラミック基板に装着し、これをハーメチックシ
ールする実装形態が採られており、多数のかかる半導体
素子をプリント配線基板に装着していた。
That is, in the past, a mounting method was adopted in which chips such as ICs and LSIs were mounted on a ceramic substrate with multilayer wiring and hermetically sealed, and a large number of such semiconductor elements were mounted on a printed wiring board.

然し、今後の実装形態としては耐湿処理技術の向上と相
持って複数個のI、Srチップをセラミックからなる多
層配線基板に搭載してLSIモジュールを作り、これを
取替え単位とし、コネクタを介してプリント配線基板に
装着すると云う実装形態が採られようとしている。
However, in the future, with the improvement of moisture-resistant processing technology, multiple I and Sr chips will be mounted on a multilayer ceramic wiring board to create an LSI module, which will be used as a replacement unit, and connected via a connector. A mounting form of mounting on a printed wiring board is now being adopted.

この場合、コネクタはプリント配線基板に半田付などの
方法で固定されており、一方LSIモジュールはコネク
タに挿抜可能な形態をとる。
In this case, the connector is fixed to the printed wiring board by a method such as soldering, while the LSI module can be inserted into and removed from the connector.

ここでIC,LSIなどの半導体素子を挿抜可能な状態
に装着するには従来はtAtコンタクトと雌コンタクト
からなるコネクタを用いて接続を行ってきた。
Here, in order to attach a semiconductor element such as an IC or an LSI in a removable state, conventionally, a connector consisting of a tAt contact and a female contact has been used for connection.

すなわちIC,LSIなどの半導体パッケージの裏側に
は複数個の金属ピンが突出して雄コンタクトを形成して
おり、一方雌コンタクトはバネを備えた接触機構からな
り、これによりコネクタが構成されている。
That is, a plurality of metal pins protrude from the back side of a semiconductor package such as an IC or an LSI to form a male contact, while a female contact is a contact mechanism equipped with a spring, thereby forming a connector.

かかる従来のコネクタ構造の場合、挿抜には端子−個当
たり数10gの荷重を必要とし、(ifi−)で本発明
に係るLSISタモー・ルに使用するコネクタのように
端子数が数100個Gこ及ぶ多端子用の接触機構にこの
方式を適用すると挿抜に数]OKgの荷重を要すること
になり、通常の手段では挿抜を行うことができなくなる
In the case of such a conventional connector structure, a load of several tens of grams per terminal is required for insertion and removal, and the number of terminals is several hundred grams like the connector used for the LSIS terminal according to the present invention in (ifi-). If this method is applied to a multi-terminal contact mechanism, a load of several kilograms will be required for insertion and removal, and insertion and removal cannot be performed by normal means.

そこでこの問題を解決する方法として半田熔融式コネク
タが提案されている。
Therefore, a solder melt type connector has been proposed as a method to solve this problem.

すなわち、このコネクタは端子の挿抜を零挿入力、零抜
去力に近い状態で行うもので、接触機構が金属ピンから
なるMコンタクトと接続槽に半田などの低融点金属を充
填した雌コンタクトから構成されており、挿抜時には接
続槽を加熱して低融点金属を溶解し、この状態で金属ピ
ンからなる雄コンタクトを挿抜すること番こより、殆ど
零の挿抜力でコネクタ接続を行うものである。
In other words, this connector allows terminals to be inserted and removed under conditions close to zero insertion force and zero removal force, and the contact mechanism consists of an M contact made of a metal pin and a female contact whose connection tank is filled with a low melting point metal such as solder. During insertion and removal, the connection tank is heated to melt the low melting point metal, and in this state, male contacts made of metal pins are inserted and removed, thereby connecting the connector with almost zero insertion and removal force.

なお、挿抜時以外は接続槽は常温に保たれており、1l
ullコンタクトを形成する低融点金属はmコンタクト
を形成する金属ピンと固着し、殆ど零に近い接触抵抗を
実現している。
The connection tank is kept at room temperature except during insertion and removal, and the 1L
The low melting point metal forming the ull contact is firmly attached to the metal pin forming the m contact, achieving a contact resistance close to zero.

本発明しJかかるTl1溶融式高密度コネクタの接続槽
に充填する半田合金の組成に関するものである。
The present invention relates to the composition of the solder alloy to be filled into the connection tank of the T11 melting type high-density connector.

[従来の技術] 半田熔融式高密度コネクタの接続槽に充填する低融点金
属には各種のものがあるが、インジウム(In )−錫
(Sn )合金系が代表的であり、融点が117乃至1
50℃のIn成のものが適当とされている。
[Prior Art] There are various types of low melting point metals that are filled in the connection tank of solder melting type high density connectors, but indium (In)-tin (Sn) alloys are typical, and they have melting points of 117 to 117. 1
It is said that a 50° C. In-formed material is suitable.

第2図はIn−Sn合金系の状態図を示すもので、この
温度範囲で溶融する組成は右下がり斜線領域1でSn含
有量が7乃至59重量%の領域ずなわち41乃至93重
量%In残りSnの組成である。
Figure 2 shows a phase diagram of the In-Sn alloy system, and the composition that melts in this temperature range is the diagonally shaded area 1, which is downward to the right, where the Sn content is 7 to 59% by weight, or 41 to 93% by weight. This is the composition of In and remaining Sn.

ここで上限として150℃をとる理由は高密度コネクタ
のプリン1〜配線基板への装着が通常の6−4半田(3
7Pb−63Sn、融点183℃)を使用してなされる
ために接続槽に充填する半田合金はこの温度以下で溶融
していることが必要であり、そのため安全を見込んで1
50℃をとっである。
The reason why the upper limit is set at 150°C is that the high-density connector is attached to the print 1 to wiring board using normal 6-4 solder (3
7Pb-63Sn (melting point 183°C) is used, so the solder alloy filled in the connection tank must be melted at a temperature below this temperature.
The temperature was set at 50°C.

また下限として117℃をとる理由は状態図から明らか
なようにこの温度が共晶温度であることによる。
Further, the reason why 117° C. is taken as the lower limit is that this temperature is the eutectic temperature, as is clear from the phase diagram.

従来はこのような合金組成の半田合金が用いられていた
Conventionally, solder alloys having such alloy compositions have been used.

然し、この合金は硬度が小さい為に使用に当たって雄コ
ンタクトを形成する金属ピンとの接触が不安定で、信頼
性確保の点で問題であった。
However, since this alloy has low hardness, contact with the metal pin forming the male contact is unstable during use, which poses a problem in ensuring reliability.

〔発明が解決しようとする問題点3 以上jEべたように本発明に係る半田溶融式コネクタに
は融点が低いことからIn−Sn合金が適しているが、
半導体モジュールの金属ピンとの接触が不安定なことが
信頼性確保の点から問題であり、本発明の目的はIn、
−5n系の半田合金を改良して安定な接触状態を得るに
ある。
[Problem to be Solved by the Invention 3 As mentioned above, In-Sn alloy is suitable for the solder melting type connector according to the present invention because of its low melting point.
The unstable contact with the metal pins of the semiconductor module is a problem from the viewpoint of ensuring reliability, and the purpose of the present invention is to
The objective is to improve the -5n solder alloy to obtain a stable contact state.

〔問題点を解決するための手段〕[Means for solving problems]

上記の問題点は半田溶融式高密度コネクタの接続槽に充
填する半田合金が41乃至93重量%In残りSnの合
金に対し、総量の0.1乃至19.5重量%に相当する
金(Au)を添加したものを使用することにより解決す
ることができる。
The above-mentioned problem is that the solder alloy filled in the connection tank of the solder melting type high-density connector is 41 to 93% by weight of In and the rest is Sn, and the gold (Au) is equivalent to 0.1 to 19.5% by weight of the total amount. ) can be solved by using a product with added.

〔作用〕[Effect]

本発明はIn−Sn合金系について融点が100℃乃至
150℃の挿抜温度範囲にあると共に硬度が大きく且つ
金属ピンとの接触抵抗の増加を生じない添加物としてA
nを見い出したもので、総量の0.1乃至19.5重量
%添加することによって」−記の問題を解決することが
できる。
The present invention uses A as an additive that has a melting point in the insertion/extraction temperature range of 100°C to 150°C for In-Sn alloys, has high hardness, and does not cause an increase in contact resistance with metal pins.
n is found, and by adding 0.1 to 19.5% by weight of the total amount, the problem described in "-" can be solved.

発明者等は先にIn−Sn合金系に銀(Ag )を添加
すると硬度が増し、これによって金属ピンとの接触が安
定化する現象を見いだしているが、これと同様な現象が
Auを添加した場合にも認められ、またAuを添加した
三元合金系を使用することによって金属ピンの寿命を著
しく向上できることを見いだしたものである。
The inventors previously discovered that when silver (Ag) was added to an In-Sn alloy system, the hardness increased, which stabilized the contact with the metal pin, and a similar phenomenon occurred when Au was added. It has also been found that the life of metal pins can be significantly improved by using a ternary alloy system to which Au is added.

〔実施例〕〔Example〕

第1図は本発明に係る三元合金について切断状態図を示
すもので、521n−48Snの共晶組成にAuを添加
した場合について示している。  ・図から判るように
5重量%の添加により、117°Cの共晶温度は115
.5 ’cにまで低下し、その後は添加量の増加と共に
液相線2は次第に上昇する傾向にある。
FIG. 1 shows a cut state diagram of the ternary alloy according to the present invention, and shows the case where Au is added to the eutectic composition of 521n-48Sn.・As you can see from the figure, by adding 5% by weight, the eutectic temperature of 117°C becomes 115
.. 5'c, and thereafter the liquidus line 2 tends to gradually rise as the amount added increases.

ここで、先に記したようにIn−3n系合金の使用温度
の上限を150℃と決めると、ALlの添加■の上限は
第1図から19.5重量%となる。
Here, if the upper limit of the operating temperature of the In-3n alloy is determined to be 150 DEG C. as described above, then the upper limit of the addition of AL1 is 19.5% by weight from FIG.

なお同図に示すように同相線3もAuの5%添加によっ
て114.2℃にまで下がり、以下添加量に依存せず略
一定値を保っている。
As shown in the figure, the in-phase line 3 also decreases to 114.2° C. by adding 5% Au, and thereafter maintains a substantially constant value regardless of the amount added.

第3図し才筆1図に示す切断状態図の合金組成について
常温で測定したヌープ硬度の変化を示すもので、横軸に
は添加量を取ってあり、Au添加の場合をAg添加の場
合と対比しである。
Figure 3 shows the change in Knoop hardness measured at room temperature for the alloy composition shown in the cutting diagram shown in Figure 1.The horizontal axis shows the amount of addition, with the case of Au addition and the case of Ag addition. In contrast.

すなわち共晶組成のヌープ硬度は約1.1であるが、添
加量に比例して硬度は増加する。
That is, the Knoop hardness of the eutectic composition is approximately 1.1, but the hardness increases in proportion to the amount added.

ここでAgを添加する場合4は添加量に比例して急激に
上昇し、約10%を過ぎると飽和する傾向を示すがAn
を添加する場合5は殆ど直線的に増加し、添加量が20
%を越えても未だ飽和傾向は見られない。
When Ag is added here, 4 increases rapidly in proportion to the amount added, and tends to be saturated after about 10%, but An
When adding 5, it increases almost linearly, and when the amount added is 20
%, there is still no tendency to saturation.

第4図はAu添加によって硬度を増した半田合金を使用
して金属ピンとの接触抵抗の変化を温度を変えて測定し
たもので、Ag添加の場合と対比して示しである。
FIG. 4 shows changes in contact resistance with a metal pin measured at different temperatures using a solder alloy whose hardness has been increased by adding Au, and is compared with the case of adding Ag.

ここで金属ピンは径が0.3鮪の燐青銅線を芯線とし、
これにニッケル(Ni )を厚さ2μm、パラジウム(
Pd )を2μm下地メッキし、この上に0.1 μm
の厚さにAuメッキを施しである。
Here, the metal pin uses a phosphor bronze wire with a diameter of 0.3 tuna as the core wire,
This was coated with nickel (Ni) to a thickness of 2 μm and palladium (
Pd) was plated as a 2 μm base plate, and then a 0.1 μm layer was plated on top of this.
It is plated with Au to a thickness of .

このような金属ピン2本を半田合金浴に挿入した状態で
凝固させ、この2本の金属ピン間の抵抗値変化を温度を
変えて測定したものである。
Two such metal pins were inserted into a solder alloy bath and solidified, and the change in resistance value between the two metal pins was measured by varying the temperature.

ここで半田合金は共晶組成すなわち521n  48S
nの半田浴6と共晶組成に5重量%のAuを添加した半
田浴7と5重量%のAgを添加した半田浴8の各々の場
合について示している。
Here, the solder alloy has a eutectic composition, that is, 521n 48S
The cases of a solder bath 6 of n, a solder bath 7 in which 5% by weight of Au is added to the eutectic composition, and a solder bath 8 in which 5% by weight of Ag is added are shown.

図から判るように従来の共晶組成の半田浴6を用いた場
合は約1.8mΩの接触抵抗値を示し、不安定な接触状
態を示しているが、Auを添加した半田浴7およびAg
を添加した半田浴8を使用した場合は安定しており、ま
た接触抵抗値も約1.5mΩと共晶組成の半田浴6を使
用する場合よりも低い値を示している。
As can be seen from the figure, when the conventional solder bath 6 with a eutectic composition is used, the contact resistance value is about 1.8 mΩ, indicating an unstable contact state, but when the solder bath 7 containing Au and the Ag
When using the solder bath 8 to which is added, it is stable, and the contact resistance value is about 1.5 mΩ, which is lower than when using the solder bath 6 having a eutectic composition.

以−にのことから従来の半田浴を使用する場合の接触不
安定は半田合金の硬度不足に基づくとの推定が裏付られ
ると共に本発明に係るAuを添加した三元合金により解
決することができる。
The above supports the assumption that contact instability when using conventional solder baths is due to insufficient hardness of the solder alloy, and that the problem can be solved by the Au-added ternary alloy according to the present invention. can.

次にこの三元合金を半田浴として使用する利点は金属ピ
ンの寿命を延長できることである。
A second advantage of using this ternary alloy as a solder bath is that it can extend the life of the metal pin.

すなわち通常金属ピンは信顛性確保の見地からAuメッ
キが施されているが、溶融した半田浴への挿抜を繰り返
しているとAuメッキを構成するAu原子が半田浴の中
に溶解′して下地の金属が現れ信転性が低下すると云う
問題がある。
In other words, metal pins are normally plated with Au to ensure reliability, but if they are repeatedly inserted into and removed from a molten solder bath, the Au atoms that make up the Au plating will dissolve into the solder bath. There is a problem in that the underlying metal is exposed and the reliability is reduced.

然し、Auを添加した三元合金を半田浴として用いると
Auメッキの溶解を顕著に抑制することができる。
However, if a ternary alloy containing Au is used as a solder bath, dissolution of the Au plating can be significantly suppressed.

実施例として先に記したように0.1 μmのAuメッ
キを施した直径0.3 n、長さIHの金属ピンを共晶
組成に5%のAuを添加したものとAgを添加した三元
合金の半田浴を準備し、これを300℃に保って浸漬試
験を行ったところ、Ag添加浴を用いたものは100時
間経過後においてはAllメッキは完全に溶解して痕跡
を残さないが、Au添加浴を用いたものは0.05μm
のメッキ膜が残っていた。
As an example, as described above, metal pins with a diameter of 0.3 nm and a length of IH plated with 0.1 μm of Au were prepared using three metal pins, one with 5% Au added to the eutectic composition and the other with Ag added. When we prepared a solder bath of the original alloy and conducted an immersion test while keeping it at 300°C, we found that in the case where the Ag-added bath was used, the All plating completely melted and left no trace after 100 hours. , 0.05 μm using Au addition bath
The plating film remained.

このように苛酷な試験における結果からも本発明に係る
三元合金の優秀性を理解することができる。
The superiority of the ternary alloy according to the present invention can be understood from the results of such severe tests.

なお特許請求範囲としてAuの最小限の添加量のとして
0.1 %と規定しであるがこの理由は添加量が0.1
%以下の場合は硬度の増加が殆ど認められないことによ
る。
Note that the claimed range specifies that the minimum amount of Au added is 0.1%; the reason for this is that the amount added is 0.1%.
% or less, this is because almost no increase in hardness is observed.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明にかかるIn −3n−Au
三元合金でAuの添加量が0.1乃至19.5%、 の
半田合金を使用すれば半田溶融式高密度コネクタで問題
とされていた接触不安定の問題とメッキ膜の溶解の問題
を解決することができる。
As explained above, In-3n-Au according to the present invention
Using a solder alloy with a ternary alloy containing 0.1 to 19.5% of Au can solve the problems of unstable contact and melting of the plating film, which were problems with solder melting type high-density connectors. It can be solved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係るコネクタ接点用半田合金の切断状
態図。 第2図はIn−3n二元状態図。 第3図はIn−3n共品合金にAu或いはAgを添加し
た場合の硬度の変化を示す特性図。 第4図は金属ピンと半田浴との接触抵抗の温度特性を示
す特性図。 である。 図において、 2は液相線、       3は固相綿、4.8はAg
を添加した半田浴、 5.7ははAI+を添加した半田浴、 である。 四部と
FIG. 1 is a cut-away diagram of the solder alloy for connector contacts according to the present invention. FIG. 2 is an In-3n binary phase diagram. FIG. 3 is a characteristic diagram showing changes in hardness when Au or Ag is added to an In-3n alloy. FIG. 4 is a characteristic diagram showing the temperature characteristics of contact resistance between a metal pin and a solder bath. It is. In the figure, 2 is the liquidus line, 3 is the solid phase cotton, and 4.8 is the Ag
5.7 is a solder bath to which AI+ is added. Four parts and

Claims (1)

【特許請求の範囲】[Claims] 半田溶融式高密度コネクタの接続槽に充填する半田合金
が41乃至93重量%インジウム残り錫の合金に対し、
総量の0.1乃至19.5重量%に相当する金を添加し
たことを特徴とするコネクタ接点用半田合金。
The solder alloy filled in the connection tank of the solder melting type high-density connector is an alloy of 41 to 93% by weight indium and the remainder tin.
A solder alloy for connector contacts, characterized in that gold is added in an amount corresponding to 0.1 to 19.5% by weight of the total amount.
JP59153417A 1984-07-24 1984-07-24 Solder melting type high density connector Expired - Fee Related JPH0680882B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59153417A JPH0680882B2 (en) 1984-07-24 1984-07-24 Solder melting type high density connector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59153417A JPH0680882B2 (en) 1984-07-24 1984-07-24 Solder melting type high density connector

Publications (2)

Publication Number Publication Date
JPS6133789A true JPS6133789A (en) 1986-02-17
JPH0680882B2 JPH0680882B2 (en) 1994-10-12

Family

ID=15562042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59153417A Expired - Fee Related JPH0680882B2 (en) 1984-07-24 1984-07-24 Solder melting type high density connector

Country Status (1)

Country Link
JP (1) JPH0680882B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1383149A2 (en) * 2002-07-16 2004-01-21 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and wire member for a thermal fuse element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5684432A (en) * 1979-12-11 1981-07-09 Seiko Epson Corp Gold brazing material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5684432A (en) * 1979-12-11 1981-07-09 Seiko Epson Corp Gold brazing material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1383149A2 (en) * 2002-07-16 2004-01-21 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and wire member for a thermal fuse element
EP1383149A3 (en) * 2002-07-16 2004-01-28 Uchihashi Estec Co., Ltd. Alloy type thermal fuse and wire member for a thermal fuse element

Also Published As

Publication number Publication date
JPH0680882B2 (en) 1994-10-12

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