JPS6132827B2 - - Google Patents
Info
- Publication number
- JPS6132827B2 JPS6132827B2 JP51142157A JP14215776A JPS6132827B2 JP S6132827 B2 JPS6132827 B2 JP S6132827B2 JP 51142157 A JP51142157 A JP 51142157A JP 14215776 A JP14215776 A JP 14215776A JP S6132827 B2 JPS6132827 B2 JP S6132827B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- junction
- voltage
- type
- dielectric breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015556 catabolic process Effects 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14215776A JPS5367367A (en) | 1976-11-29 | 1976-11-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14215776A JPS5367367A (en) | 1976-11-29 | 1976-11-29 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5367367A JPS5367367A (en) | 1978-06-15 |
| JPS6132827B2 true JPS6132827B2 (enrdf_load_stackoverflow) | 1986-07-29 |
Family
ID=15308678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14215776A Granted JPS5367367A (en) | 1976-11-29 | 1976-11-29 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5367367A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0228937A (ja) * | 1988-07-19 | 1990-01-31 | Matsushita Electron Corp | 半導体装置 |
| JP5755939B2 (ja) * | 2011-05-24 | 2015-07-29 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
-
1976
- 1976-11-29 JP JP14215776A patent/JPS5367367A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5367367A (en) | 1978-06-15 |
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