JPS6130299Y2 - - Google Patents
Info
- Publication number
- JPS6130299Y2 JPS6130299Y2 JP3867879U JP3867879U JPS6130299Y2 JP S6130299 Y2 JPS6130299 Y2 JP S6130299Y2 JP 3867879 U JP3867879 U JP 3867879U JP 3867879 U JP3867879 U JP 3867879U JP S6130299 Y2 JPS6130299 Y2 JP S6130299Y2
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving
- semiconductor substrate
- piq
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【考案の詳細な説明】
本考案は半導体受光装置の表面保護の改良に関
するものである。[Detailed Description of the Invention] The present invention relates to an improvement in surface protection of a semiconductor light receiving device.
半導体素子の耐湿改善のために、第１図に示す
如くSiO2膜２で覆われた半導体素子１の表面全
域にポリイミド樹脂等の絶縁膜３を被覆した装置
が開発されている。しかしホトダイオード、ホト
トランジスタ、ホトサイリスタ等の受光素子にお
いては素子表面全域を樹脂被覆することにより受
光感度が低下したり、また樹脂自体の特性により
素子本来の分光感度特性を変える惧れがあり、実
用化するには問題があつた。 In order to improve the moisture resistance of a semiconductor element, an apparatus has been developed in which the entire surface of a semiconductor element 1 covered with a SiO 2 film 2 is coated with an insulating film 3 made of polyimide resin or the like, as shown in FIG. However, in light-receiving elements such as photodiodes, phototransistors, and photothyristors, coating the entire surface of the element with resin may reduce the light-receiving sensitivity, or the properties of the resin itself may change the original spectral sensitivity characteristics of the element. There were problems in making it a reality.
本考案は上記従来装置の問題点に鑑みてなされ
たもので、受光特性を低下させることなく半導体
素子の耐湿の改善を計つた半導体受光装置を提供
する。以下に図面用いて本考案を詳細に説明す
る。 The present invention has been devised in view of the problems of the conventional device described above, and provides a semiconductor light-receiving device that improves the moisture resistance of a semiconductor element without degrading the light-receiving characteristics. The present invention will be explained in detail below using the drawings.
第２図はホトダイオードに本考案を実施した場
合の素子断面を示し、第３図はホトトランジスタ
に実施した場合の素子平面及び断面を示す。両図
において１１はＰ或いはＮ型の導電性をもつたシ
リコン等の半導体基板で、該半導体基板１１には
ホトダイオード、ホトトランジスタ等の性能に応
じＮ或いはＰ型の不純物領域が形成されPN接合
が設けられ、該PN接合は基板の受光表面に達し
ている。PN接合が表面に達した基板面は、SiO2
等の絶縁膜１２で覆われ、また各Ｐ及びＮ領域に
は電極１３がAl等によつて設けられている。電
極１３が形成された半導体基板面にはポリイミド
樹脂PIQ膜１４が設けられているが、該PIQ膜１
４は基板面全域に設けられるものではなく、図に
示す如く受光面の主たる領域の中央部を被覆する
ことなく、絶縁膜１２の周縁部上にのみ形成され
る。即ち基板表面に被覆されたPIQ膜は中央部が
従来公知のエツチング方法によつて除去され、周
囲が残存される。周縁がPIQ被覆された半導体素
子は従来からこの種の装置で実施されている如
く、ステム等の支持台上にダイボンドされた状態
で透光性エポキシ等の樹脂でモールドされ、外部
環境から完全に遮断される。 FIG. 2 shows a cross section of the device when the present invention is applied to a photodiode, and FIG. 3 shows a plane and cross section of the device when the invention is applied to a phototransistor. In both figures, 11 is a semiconductor substrate made of silicon or the like having P or N type conductivity, and an N or P type impurity region is formed in the semiconductor substrate 11 depending on the performance of the photodiode, phototransistor, etc. to form a PN junction. The PN junction reaches the light-receiving surface of the substrate. The substrate surface where the PN junction reaches the surface is SiO 2
An electrode 13 made of Al or the like is provided in each P and N region. A polyimide resin PIQ film 14 is provided on the semiconductor substrate surface on which the electrode 13 is formed.
4 is not provided over the entire substrate surface, but is formed only on the peripheral edge of the insulating film 12 without covering the center of the main area of the light-receiving surface, as shown in the figure. That is, the central portion of the PIQ film coated on the substrate surface is removed by a conventionally known etching method, leaving the periphery. A semiconductor element whose peripheral edge is coated with PIQ is die-bonded onto a support such as a stem and molded with a resin such as translucent epoxy, as has been conventionally done in this type of equipment, and is completely protected from the external environment. will be cut off.
第４図は受光感度特性を示す図で、曲線Ａは本
考案による半導体受光装置の特性を示し、曲線Ｂ
は半導体基板面がPIQで全く被覆されずにエポキ
シ樹脂モールドされた受光素子の特性を示す。ま
た曲線Ｃは半導体基板の受光面全域がPIQで被覆
された装置の特性を示す。同図から明らかなよう
に、受光面全域をPIQで被覆した装置において
は、受光特性が波長によつて不均一になるが、本
考案の受光素子によればPIQ被覆のない素子の分
光感度特性とほとんどかわりがなく、PIQ被覆に
よる特性への影響はみられない。 FIG. 4 is a diagram showing the light receiving sensitivity characteristics, where curve A shows the characteristics of the semiconductor light receiving device according to the present invention, and curve B shows the characteristics of the semiconductor light receiving device according to the present invention.
shows the characteristics of a light-receiving element in which the semiconductor substrate surface is not coated with PIQ at all and is molded with epoxy resin. Curve C shows the characteristics of a device in which the entire light-receiving surface of the semiconductor substrate is coated with PIQ. As is clear from the figure, in a device where the entire light-receiving surface is coated with PIQ, the light-receiving characteristics become non-uniform depending on the wavelength, but according to the light-receiving element of the present invention, the spectral sensitivity characteristics of an element without PIQ coating are There is almost no difference, and no effect on the characteristics is seen due to the PIQ coating.
一方耐湿性の面においては、湿気による特性劣
化は素子周縁から水分が浸透してAl電極部等に
おける絶縁が不完全になつて導通するために起る
とされているが、PIQを周縁部に設けることによ
り湿気の浸透を阻止することができ、基板表面全
域をPIQ被覆する場合と同程度の耐湿性の向上を
図ることができる。 On the other hand, in terms of moisture resistance, it is said that characteristic deterioration due to moisture is caused by moisture penetrating from the periphery of the element, making insulation at the Al electrode part incomplete and causing conduction. By providing this, moisture penetration can be prevented, and moisture resistance can be improved to the same extent as when the entire surface of the substrate is coated with PIQ.
以上本考案によれば、受光領域の周縁部にポリ
イミド樹脂膜を被覆して受光素子を構成すること
により、素子の分光感度特性を全く損うことなく
耐湿性の改善を図ることができ、耐久性のすぐれ
た半導体受光装置を得ることができる。 As described above, according to the present invention, by configuring the light receiving element by coating the peripheral edge of the light receiving area with a polyimide resin film, it is possible to improve the moisture resistance without impairing the spectral sensitivity characteristics of the element at all, and to improve the durability. A semiconductor light receiving device with excellent properties can be obtained.
第１図は従来装置の断面図、第２図は本考案に
よる実施例を示す断面図、第３図ａ，ｂは本考案
による他の実施例を示す平面図及び断面図、第４
図は従来装置及び本考案による実施例の分光感度
特性を示す図である。
１１：半導体基板、１２：SiO2、１３：電
極、１４：PIQ膜。
FIG. 1 is a sectional view of a conventional device, FIG. 2 is a sectional view showing an embodiment of the present invention, FIGS. 3 a and b are a plan view and sectional view of another embodiment of the present invention, and FIG.
The figure is a diagram showing spectral sensitivity characteristics of a conventional device and an example according to the present invention. 11: Semiconductor substrate, 12: SiO 2 , 13: Electrode, 14: PIQ film.
Claims (1)
と、該半導体基板の表面を覆つて形成された絶縁
膜と、該絶縁膜上に形成され且つ半導体受光表面
の主領域を除去して周縁部に形成されたポリイミ
ド系絶縁膜と、半導体基板全体をモールドする透
光性樹脂とを備えてなる半導体受光装置。 A semiconductor substrate in which a PN junction is formed reaching the surface; an insulating film formed to cover the surface of the semiconductor substrate; A semiconductor light-receiving device comprising a polyimide insulating film formed and a translucent resin molding the entire semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3867879U JPS6130299Y2 (en) | 1979-03-23 | 1979-03-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3867879U JPS6130299Y2 (en) | 1979-03-23 | 1979-03-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55139559U JPS55139559U (en) | 1980-10-04 |
| JPS6130299Y2 true JPS6130299Y2 (en) | 1986-09-05 |
Family
ID=28904098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3867879U Expired JPS6130299Y2 (en) | 1979-03-23 | 1979-03-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6130299Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4800125B2 (en) * | 2006-06-28 | 2011-10-26 | オンセミコンダクター・トレーディング・リミテッド | Semiconductor integrated circuit device and manufacturing method thereof |
| JP7040140B2 (en) * | 2018-03-07 | 2022-03-23 | セイコーエプソン株式会社 | Photoelectric conversion elements, photoelectric conversion modules and electronic devices |
-
1979
- 1979-03-23 JP JP3867879U patent/JPS6130299Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55139559U (en) | 1980-10-04 |
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