JPS6129550B2 - - Google Patents
Info
- Publication number
- JPS6129550B2 JPS6129550B2 JP53096842A JP9684278A JPS6129550B2 JP S6129550 B2 JPS6129550 B2 JP S6129550B2 JP 53096842 A JP53096842 A JP 53096842A JP 9684278 A JP9684278 A JP 9684278A JP S6129550 B2 JPS6129550 B2 JP S6129550B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- region
- semiconductor region
- semiconductor substrate
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 144
- 239000000758 substrate Substances 0.000 claims description 35
- 239000012535 impurity Substances 0.000 claims description 13
- 230000006698 induction Effects 0.000 claims description 9
- 230000003068 static effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9684278A JPS5524434A (en) | 1978-08-09 | 1978-08-09 | Static induction semiconductor logical circuit device and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9684278A JPS5524434A (en) | 1978-08-09 | 1978-08-09 | Static induction semiconductor logical circuit device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5524434A JPS5524434A (en) | 1980-02-21 |
JPS6129550B2 true JPS6129550B2 (ko) | 1986-07-07 |
Family
ID=14175760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9684278A Granted JPS5524434A (en) | 1978-08-09 | 1978-08-09 | Static induction semiconductor logical circuit device and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5524434A (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0795592B2 (ja) * | 1987-04-14 | 1995-10-11 | 株式会社豊田中央研究所 | 静電誘導型半導体装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53121581A (en) * | 1977-03-31 | 1978-10-24 | Seiko Instr & Electronics Ltd | Logical element of electrostatic inductive transistor |
-
1978
- 1978-08-09 JP JP9684278A patent/JPS5524434A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53121581A (en) * | 1977-03-31 | 1978-10-24 | Seiko Instr & Electronics Ltd | Logical element of electrostatic inductive transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5524434A (en) | 1980-02-21 |
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