JPS6129550B2 - - Google Patents

Info

Publication number
JPS6129550B2
JPS6129550B2 JP53096842A JP9684278A JPS6129550B2 JP S6129550 B2 JPS6129550 B2 JP S6129550B2 JP 53096842 A JP53096842 A JP 53096842A JP 9684278 A JP9684278 A JP 9684278A JP S6129550 B2 JPS6129550 B2 JP S6129550B2
Authority
JP
Japan
Prior art keywords
semiconductor
region
semiconductor region
semiconductor substrate
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53096842A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5524434A (en
Inventor
Makoto Tachiki
Shigeo Nagao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9684278A priority Critical patent/JPS5524434A/ja
Publication of JPS5524434A publication Critical patent/JPS5524434A/ja
Publication of JPS6129550B2 publication Critical patent/JPS6129550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)
JP9684278A 1978-08-09 1978-08-09 Static induction semiconductor logical circuit device and its manufacturing method Granted JPS5524434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9684278A JPS5524434A (en) 1978-08-09 1978-08-09 Static induction semiconductor logical circuit device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9684278A JPS5524434A (en) 1978-08-09 1978-08-09 Static induction semiconductor logical circuit device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5524434A JPS5524434A (en) 1980-02-21
JPS6129550B2 true JPS6129550B2 (ko) 1986-07-07

Family

ID=14175760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9684278A Granted JPS5524434A (en) 1978-08-09 1978-08-09 Static induction semiconductor logical circuit device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5524434A (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795592B2 (ja) * 1987-04-14 1995-10-11 株式会社豊田中央研究所 静電誘導型半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121581A (en) * 1977-03-31 1978-10-24 Seiko Instr & Electronics Ltd Logical element of electrostatic inductive transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121581A (en) * 1977-03-31 1978-10-24 Seiko Instr & Electronics Ltd Logical element of electrostatic inductive transistor

Also Published As

Publication number Publication date
JPS5524434A (en) 1980-02-21

Similar Documents

Publication Publication Date Title
US4907053A (en) Semiconductor integrated circuit
JPH0758784B2 (ja) ラッチ・アップ防止性能を改良したラテラル形絶縁ゲート・バイポーラ・トランジスタ
JPH0439770B2 (ko)
JPH0336311B2 (ko)
JPH0656888B2 (ja) 半導体装置
US4259681A (en) Integrated circuit
JPH0230588B2 (ko)
JPH01198076A (ja) 半導体装置
US6812533B2 (en) SOI based bipolar transistor having a majority carrier accumulation layer as subcollector
US4035824A (en) Semiconductor device stabilized by an insulating layer formed on a semiconductor region having a low impurity concentration
US4200879A (en) Integrated semiconductor device including static induction transistor
US3855609A (en) Space charge limited transistor having recessed dielectric isolation
JPS6129550B2 (ko)
EP0316988B1 (en) Lateral high-voltage transistor
JPS6228586B2 (ko)
EP0093557A2 (en) High-speed complementary semiconductor integrated circuit
JPS6028394B2 (ja) 半導体集積回路
KR910006751B1 (ko) 반도체 집적회로장치 및 그의 제조방법
JPS6349392B2 (ko)
JPS6212665B2 (ko)
JP3127254B2 (ja) Soi型半導体装置
JP3142009B2 (ja) 静電誘導形ゲート構造の製造方法
JPS6244698B2 (ko)
KR810000963B1 (ko) 반도체 장치
JPS6140140B2 (ko)