JPS61287228A - Drawing method in electron beam exposure device - Google Patents

Abstract

PURPOSE:To shorten a working time by storing part of all of drawing information of the same pattern presented on a plurality of regions, continuously repetitively drawing on the corresponding regions, and eliminating the communication of the wasteful information. CONSTITUTION:Drawing information 3a of dividing patterns corresponding to 1/3 of a small pattern 3 is read out in a memory. Divided pattern 3a is drawn from from a region 220 with the information, the pattern 3a is sequentially drawn on the adjacent region 221 in an X direction with the same information, and the pattern 3a is thereafter drawn in 15 patterns according to the route of an arrow. Then, the read storage is updated to information of the divided pattern 3b of other portion of the pattern 3, similarly drawn by the information, the stored content is further updated to the divided pattern 3c of the pattern 3, and similarly drawn. According to the method, the communication of the information between the storing medium and the memory may be three times to remarkably shorten as compared with 90 times of the conventional method, thereby effectively drawing more complicated pattern.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electron beam exposure apparatus used for manufacturing masks for manufacturing semiconductor devices, and particularly to improvements in its drawing method.

[Prior art]

Semiconductor devices are becoming increasingly highly integrated. There is an electron beam exposure device that can perform reduction projection as a component of the lithography system that makes this possible, and with its rise, 5x and 10x masks are gradually increasing in place of the conventional 1x mask. .

These 5x or 10x masks have an extremely large amount of pattern data per chip compared to 1x masks, and it takes a long time to convert this data into a format compatible with the electron beam exposure equipment. Even when drawing exposure is performed based on the converted data, data is frequently sent and received between the magnetic disk that stores all pattern data and the drawing data memory that stores pattern data that is the unit of drawing. There is a problem of poor throughput.

FIG. 5 is an explanatory diagram of an exposure method of a conventional enlargement (5x, 10x, etc.) mask. 40 represents an area equivalent to one chip of semiconductor device, and due to memory capacity, there are six areas 4],
, 42, 43, 44, 45.46.

The data necessary for drawing the V4 area, for example 41a, for Lx in the X direction and t and y in the Y direction, is transferred from the magnetic disk with M stacks of drawing data for the entire chip to the drawing data memory. is stored in

This amount of data is determined according to the capacity of the drawing data memory. The electron beam exposure apparatus reads the contents of this drawing data memory, scans the electron beam in the Y direction, and moves the drawing target in the X direction to perform sub-scanning.

When the drawing of the area 41a is finished, the contents of the drawing data memory are updated and the drawing of the fl area 41b is performed. Thereafter, the regions 41c, . . . , 41f are drawn in the same manner. and other areas 42, 43. . . . are drawn in the same way.

As is clear from the above procedure, it is necessary to update the contents of the drawing data memory each time drawing of one area is completed, and this takes a lot of time.

[Problem that the invention seeks to solve]

Now, with the aim of improving the throughput, we
No. 7324 has been developed. This invention shortens the time it takes to convert the drawing data into a desired format by dividing the drawing pattern into a plurality of sections, converting the drawing data for each section, and composing them at the time of drawing. However, the time required for exposure is no different from the conventional method, and requires a long time.

[Means for solving problems]

The present invention focuses on the fact that a mask pattern has the same pattern in multiple areas, and after storing the drawing data of this part in the drawing pattern memory, drawing is continued and repeated for multiple areas with the same pattern. The present invention aims to provide a drawing method that eliminates wasted data transmission and reception time and improves throughput.

The drawing method according to the present invention divides drawing data stored in a storage medium as appropriate and sequentially reads them into a memory, and electronically draws the contents read into the memory onto an object to be drawn. For the same pattern that appears in multiple areas of the image to be imaged, part or all of the drawing data portion corresponding to the pattern is read into the memory, and this is continuously and repeatedly drawn in each of the areas. Features.

〔Example〕

The present invention will be specifically described below based on drawings showing embodiments thereof.

FIG. 1 is a block diagram showing the configuration of an electron beam exposure apparatus according to the present invention, and the hardware itself is the same as the conventional one. 1 is an electron gun, and the electron beam emitted from it passes through a hole in the center of an anode 2, and passes through a plurality of lenses 3.3.3 blanking electrodes 4. It passes through the deflection electrode 5 and reaches the drawing target 6 on the XY stage 7 .

8 is CPt1 (central processing bag W) that controls the control of this device
The image drawing data for one chip stored in the storage medium 10 such as a magnetic disk is read out in predetermined amounts in accordance with instructions from the input device 9, and is sent to the drawing data controller 11 as a drawn image data memo. Transfer to IJ12,
Store it here. The drawing data stored in the memory 12 is sequentially read out and sent to the deflection controller 13 in synchronization with the deflection signal, and then given to the 0/^ converter 14, where it is converted into an analog signal and given to the blanking electrode 4. . The deflection controller I3 also outputs a deflection signal and applies it to the deflection electrode 5. The stage control circuit 15 issues a control signal to move the XY stage 7 in a desired direction.

In drawing exposure, the electron beam is main scanned in the Y direction by the deflection electrode 5, sub-scanned in the X direction by the X-Y stage 7, and the blanking electrode 4 controls projection/non-projection of the electron beam onto the exposure target. It is done by doing.

FIG. 2 schematically shows the pattern of a semiconductor memory device,
Memory arrays 22.22 are arranged on both sides of the sense amplifier 21, and address circuits 23 are arranged on these sides. A semiconductor memory device having such a layout is configured with 24 small patterns (1) to (0), as shown in FIG. 3, for example.

The drawing data of these 24 small patterns are stored in the storage medium 10.

FIG. 4 is an enlarged view of one of the memory arrays 22, which is comprised of a small pattern of 3 rows and 5 columns. The drawing data that can now be stored in the drawing data memory 12 is Lx in the X direction and LV in the Y direction, where Lx is the X of the small pattern ■.
Assume that the bucket has the same dimension as the direction dimension, and t and y have the Y direction dimension of the small pattern (2). In such a case, the present invention performs drawing using the following procedure.

That is, first, the drawing data of the divided pattern O corresponding to the complement of the small pattern (2) is read into the drawing data memory 12.

Then, using this read data, drawing starts from the area 220 where the divided pattern O is to be drawn in the corner area where the small pattern ■ is to be drawn, and after drawing this area 220, the same data is used as shown by the arrow. Then, drawing is performed on the area 221 of the divided pattern O in the area of the small pattern 3 adjacent in the X direction. Following the route indicated by the arrow below, drawing is performed on the area of the divided pattern O in the area of the 15 small patterns ■. In the case of the embodiment, the other memory array 22
Draw in the same way for .

Next, the contents of the drawing data memory 2 are updated to the drawing data of the divided pattern @ of the other part of the small pattern The remaining portion of the small pattern (2) is updated to the division pattern O, and drawing is performed in the same manner.

〔effect〕

In the case of the method of the present invention as described above, it is sufficient to transmit and receive data three times between the storage medium 10 and the memory 12 during the above-mentioned exposure.

It is clear that the time required is significantly reduced when compared to the conventional method, in which data is sent and received 3 x 15 x 2-90 times. Since the more complex the pattern is, the longer it takes to send and receive drawing data, the present invention is more effective as the pattern becomes more complex, and the throughput can be further improved.

[Brief explanation of the drawing]

FIG. 1 is a block diagram of an electron beam exposure apparatus according to the method of the present invention, FIG. 2 is a pattern diagram of a semiconductor memory device, FIG. 3 is a pattern diagram showing the types of patterns, and FIG. 4 is an explanation of the method of the present invention. FIG. 5 is an explanatory diagram of the conventional method. 6...Drawing target 7...XY stage 10...
Storage medium 12...drawing data memory

Claims (1)

[Claims] 1. In an electron beam exposure device that divides the drawing data stored in a storage medium as appropriate and sequentially reads it into the memory, and electronically draws the contents read into the memory onto the drawing target, multiple areas of the image to be drawn are For the same pattern that appears in the area, a part or all of the drawing data corresponding to the pattern is read into the memory, and this is continuously and repeatedly drawn in each of the areas.