JPS6128640B2 - - Google Patents
Info
- Publication number
- JPS6128640B2 JPS6128640B2 JP14969380A JP14969380A JPS6128640B2 JP S6128640 B2 JPS6128640 B2 JP S6128640B2 JP 14969380 A JP14969380 A JP 14969380A JP 14969380 A JP14969380 A JP 14969380A JP S6128640 B2 JPS6128640 B2 JP S6128640B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- growth
- temperature
- znse
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 199
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 40
- 238000001556 precipitation Methods 0.000 claims description 39
- 239000002904 solvent Substances 0.000 claims description 27
- 239000007791 liquid phase Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002109 crystal growth method Methods 0.000 claims 3
- 239000010453 quartz Substances 0.000 description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 239000003708 ampul Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 25
- 238000009826 distribution Methods 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052711 selenium Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000005484 gravity Effects 0.000 description 6
- 229910052714 tellurium Inorganic materials 0.000 description 6
- 238000005275 alloying Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55149693A JPS5777098A (en) | 1980-10-24 | 1980-10-24 | Method and apparatus for growing znse in liquid phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55149693A JPS5777098A (en) | 1980-10-24 | 1980-10-24 | Method and apparatus for growing znse in liquid phase |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5777098A JPS5777098A (en) | 1982-05-14 |
| JPS6128640B2 true JPS6128640B2 (ar) | 1986-07-01 |
Family
ID=15480740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55149693A Granted JPS5777098A (en) | 1980-10-24 | 1980-10-24 | Method and apparatus for growing znse in liquid phase |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5777098A (ar) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62157231U (ar) * | 1986-03-28 | 1987-10-06 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041033B2 (ja) * | 1982-06-24 | 1985-09-13 | 財団法人 半導体研究振興会 | 結晶成長装置 |
| JPS6037077B2 (ja) * | 1982-07-02 | 1985-08-23 | 財団法人 半導体研究振興会 | ＺｎＳｅの結晶成長法 |
| JPS6050759B2 (ja) * | 1982-07-14 | 1985-11-09 | 財団法人 半導体研究振興会 | ＺｎＳｅのエピタキシヤル成長法及び成長装置 |
| JP4908348B2 (ja) * | 2007-08-24 | 2012-04-04 | ヤマハ発動機株式会社 | 自動二輪車 |
-
1980
- 1980-10-24 JP JP55149693A patent/JPS5777098A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62157231U (ar) * | 1986-03-28 | 1987-10-06 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5777098A (en) | 1982-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6270569B1 (en) | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method | |
| EP2071062B1 (en) | Process for producing group iii element nitride crystal | |
| Rudolph et al. | Crystal growth of ZnSe from the melt | |
| US8025728B2 (en) | Method for manufacturing single crystal of nitride | |
| EP0979883A1 (en) | Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors | |
| JPS6037076B2 (ja) | ３−６族化合物半導体の温度液相成長法 | |
| US4083748A (en) | Method of forming and growing a single crystal of a semiconductor compound | |
| US4866007A (en) | Method for preparing single-crystal ZnSe | |
| JPS6128640B2 (ar) | ||
| EP0751242A1 (en) | Process for bulk crystal growth | |
| US5015327A (en) | Method for producing semiconductive single crystal | |
| US4968491A (en) | Apparatus for performing epitaxial growth of ZNSE crystal from melt thereof | |
| US4946544A (en) | Crystal growth method | |
| JP2000086398A (ja) | ｐ型ＧａＡｓ単結晶およびその製造方法 | |
| US5047112A (en) | Method for preparing homogeneous single crystal ternary III-V alloys | |
| JP4248276B2 (ja) | Ｉｉｉ族窒化物の結晶製造方法 | |
| Foster et al. | Formation of built-in light-emitting junctions in solution-grown GaP containing shallow donors and acceptors | |
| US4180423A (en) | Method of manufacturing red light-emitting gallium phosphide device | |
| US5679151A (en) | Method for growing single crystal | |
| Sen et al. | Growth of Large-Diameter CdZnTe and CdTeSe Boules for Hg1− xCdxTe Epitaxy: Status and Prospects | |
| Capper | Bulk growth techniques | |
| Isshiki | Bulk growth of widegap II–VI single crystals | |
| JP2610319B2 (ja) | ▲ｉｉ▼−▲ｖｉ▼族化合物半導体結晶の製造方法 | |
| JPH01145398A (ja) | 燐化ガリウムの液相エピタキシヤル成長方法 | |
| GF | Wide-Bandga |